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onsemi KSC5302DTU
- Part No.:
- KSC5302DTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
KSC5302DTU.pdf
- Description:
- TRANS NPN 400V 2A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,112
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Product details
Overview
KSC5302DTU from Fairchild Semiconductor is an NPN silicon power transistor in TO-220 package, rated for 800 V collector-base voltage, 400 V collector-emitter voltage, and 2 A DC collector current. It integrates a built-in freewheeling diode and delivers fast switching with 2 µs storage time and 150 ns turn-on time, enabling efficient anti-saturation operation in high-voltage half-bridge lighting ballasts.
For engineers reviewing the KSC5302DTU datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, low base drive requirement (0.2 A for 1 A IC), diode forward voltage (1.2 V at 0.4 A), and thermal resistance (2.5 °C/W junction-to-case) for high-power switching reliability.
Technical Context
The KSC5302DTU is a high-voltage, high-speed NPN bipolar power switch optimized for resonant and quasi-resonant ballast drivers. Its integrated freewheeling diode eliminates external diode placement and reduces layout parasitics, while its low storage time spread minimizes timing variability without requiring hFE matching.
It operates with fixed base-driven saturation control: VCE(sat) = 0.4 V at IC = 0.4 A/IB = 0.04 A and 0.5 V at IC = 1 A/IB = 0.2 A; reverse recovery time trr is 800 ns at IF = 0.2 A and di/dt = 10 A/µs, supporting stable commutation in inductive loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 800 V - Withstands 800 V between collector and base before breakdown, enabling use in 400 V DC bus systems with safety margin. |
| VCEO | 400 V - Maximum sustainable collector-emitter voltage under open-base condition, suitable for half-bridge topologies with clamped inductive kick. |
| IC (DC) | 2 A - Continuous collector current rating defines maximum steady-state load handling capability in ballast or SMPS primary switches. |
| tSTG | 2 µs - Confirmed storage time at VCC = 15 V, critical for predicting minimum off-time and preventing cross-conduction in bridge configurations. |
| Rθjc | 2.5 °C/W - Junction-to-case thermal resistance enables 50 W power dissipation at TC = 25 °C, requiring heatsink design for >10 W continuous operation. |
| VF (diode) | 1.2 V @ 0.4 A - Forward voltage of integrated freewheeling diode directly impacts conduction loss during flyback phase in inductive switching circuits. |
| Cob | 75 pF @ VCB = 10 V - Output capacitance affects switching loss and EMI generation during hard-switched transitions above 100 kHz. |
Pinout & Package
Package: TO-220 (3-lead, straight lead, insulated tab). Case temperature sensing point located at mounting surface; tab is electrically connected to collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to drive transistor into saturation; requires 0.2 A for full 1 A collector conduction. |
| 2 (Collector) | High-side power output | Connected to high-voltage rail or inductive load; electrically tied to metal tab for thermal path and voltage reference. |
| 3 (Emitter) | Power return node | Serves as common emitter reference; carries full load current and must be routed with low-inductance layout for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in freewheeling diode | Eliminates discrete diode placement, reduces PCB area and parasitic inductance in flyback paths of electronic ballasts. |
| Low base drive requirement | 0.2 A base current sufficient for 1 A collector conduction, easing driver stage design and reducing gate-drive transformer size. |
| Stable storage time | 2 µs typical storage time with narrow spread - enables predictable timing in self-oscillating or fixed-frequency ballast controllers. |
| No hFE dependency | Anti-saturation behavior is achieved via internal diode and optimized doping, removing need for hFE binning or feedback compensation. |
| High breakdown margin | 800 V VCBO provides >100 % margin over 400 V VCEO rating, enhancing robustness against voltage transients in AC line-connected applications. |
Applications
| Compact Fluorescent Lamp (CFL) Ballasts | LED Driver Half-Bridge Stages |
|---|---|
Use Scenario: High-frequency resonant switching in 20–60 kHz CFL electronic ballasts driving 4–40 W lamps. IC Role / Device Role / Timing Role: Primary high-side switch in half-bridge topology, commutated with complementary device and controlled by self-oscillating or IC-based controller. Use Value: Integrated freewheeling diode and 2 µs storage time ensure clean zero-voltage switching transitions and reduce EMI generation. | Use Scenario: Constant-current LED driver using LLC or asymmetric half-bridge architecture for streetlight or industrial luminaires. IC Role / Device Role / Timing Role: High-voltage switching element in primary side, handling 300–400 V DC bus with inductive energy transfer. Use Value: 800 V VCBO withstands reflected transients from transformer leakage inductance, improving system reliability without snubber overhead. |
| Induction Heating Inverters | AC Motor Control Pre-driver Stage |
Use Scenario: Medium-power (500–1500 W) induction cooktop inverters operating at 20–50 kHz with series-resonant tank. IC Role / Device Role / Timing Role: Switching transistor in full-bridge leg, conducting high di/dt currents during resonant zero-current switching. Use Value: 75 pF Cob and 150 ns tON support efficient high-frequency operation while maintaining low switching loss and thermal rise. | Use Scenario: Gate driver pre-amplifier stage feeding IGBTs or MOSFETs in 3-phase motor drives up to 2 kW. IC Role / Device Role / Timing Role: Level-shifting, current-boosting interface between low-voltage PWM controller and high-side gate driver inputs. Use Value: Low VBE(sat) (0.9 V @ 0.4 A) ensures fast turn-on of downstream drivers with minimal propagation delay variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST13007D | Lower VCBO (600 V), higher Rθjc (3.0 °C/W), no integrated diode | Requires external freewheeling diode; less margin for 400 V bus designs | Choose when cost sensitivity outweighs breakdown margin and layout simplification needs. |
| MJD127G | Lower VCEO (100 V), TO-220F package, higher hFE but no diode | Not suitable for >200 V applications; limited to low-voltage DC-DC or linear regulator pass devices | Select only for low-voltage, high-gain analog or linear applications - not a functional replacement for KSC5302DTU. |
Compared with ST13007D and MJD127G, the KSC5302DTU uniquely combines 800 V VCBO, integrated freewheeling diode, and sub-2 µs storage time - making it irreplaceable in high-reliability, high-voltage half-bridge lighting and induction systems where layout simplicity and transient robustness are critical.
Availability
KSC5302DTU is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, LED driver half-bridge stages, and induction heating inverters requiring stable component supply across long production lifecycles.
Supply support for KSC5302DTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.
The KSC5302DTU belongs to Fairchild's high-voltage bipolar power transistor family, designed specifically for resonant-mode electronic lighting ballasts and medium-frequency inverter applications demanding ruggedness and integrated functionality.
FAQ
What is the maximum collector-emitter voltage rating for the KSC5302DTU?
The KSC5302DTU has a maximum collector-emitter voltage (VCEO) rating of 400 V at TC = 25 °C with IB = 0. This rating defines the upper limit for safe operation in open-base conditions and is validated per JEDEC test conditions. Exceeding this voltage risks avalanche breakdown and permanent device failure. The KSC5302DTU must be used with appropriate voltage derating in real-world circuits where transients may exceed nominal bus voltage.
Does the KSC5302DTU include an integrated freewheeling diode?
Yes, the KSC5302DTU integrates a monolithic freewheeling diode within the same die, as confirmed in its application notes and electrical characteristics table (VF = 1.2 V at IF = 0.4 A). This diode enables efficient anti-saturation operation and eliminates the need for an external diode in half-bridge or flyback configurations. The KSC5302DTU's internal diode shares the same collector and emitter terminals, with forward conduction occurring from emitter to collector.
What is the thermal resistance junction-to-case for the KSC5302DTU?
The KSC5302DTU has a specified junction-to-case thermal resistance (Rθjc) of 2.5 °C/W, measured under standard mounting conditions on a flat, bare copper heatsink with thermal compound. This value enables calculation of maximum allowable case temperature for a given power dissipation - for example, at 30 W dissipation, junction temperature rise above case is 75 °C. The KSC5302DTU's TO-220 package tab is electrically connected to the collector and serves as the primary thermal path.
Can the KSC5302DTU be used in place of the KSC5302D?
Yes, the KSC5302DTU is a direct variant of the KSC5302D, with identical electrical specifications, pinout, and package dimensions. The "TU" suffix denotes tape-and-reel packaging for automated assembly, while the base part KSC5302D typically refers to tube packaging. All absolute maximum ratings, electrical characteristics, and thermal data apply identically to the KSC5302DTU, and no circuit redesign or layout change is required when substituting.
What is the storage time (tSTG) specification for the KSC5302DTU under typical operating conditions?
The KSC5302DTU has a typical storage time (tSTG) of 2 µs when tested at VCC = 15 V, VZ = 300 V, IC = 0.8 A, IB1 = 0.16 A, IB2 = −0.16 A, and L = 200 µH. This parameter reflects the time required for minority carriers to clear from the base region after base drive removal, directly impacting minimum off-time and dead-time requirements in bridge topologies. The KSC5302DTU's low and consistent tSTG supports reliable high-frequency switching without timing guardband expansion.
KSC5302DTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 200mA, 1A
- Current - Collector Cutoff (Max):
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 10 @ 1A, 1V
- Power - Max:
- 50 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
KSC5302DTU FAQ
1.How can I place an order for KSC5302DTU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSC5302DTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSC5302DTU reliable?
The price and inventory of KSC5302DTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC5302DTU is usually 5 days.
3.What payment methods are accepted for KSC5302DTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC5302DTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSC5302DTU?
KSC5302DTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSC5302DTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSC5302DTU?
For technical support, including KSC5302DTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC5302DTU requirements.
6.How does Aetrix verify that KSC5302DTU is sourced from the original manufacturer or authorized distributors?
All KSC5302DTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC5302DTU meets industry standards.
7.What is the process for return or replacement of KSC5302DTU?
All KSC5302DTU units undergo pre-shipment inspection (PSI). If there is an issue with KSC5302DTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSC5302DTU part is unused and in its original packaging.
Return procedure for KSC5302DTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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