onsemi KSC5305DFTTU

Overview

KSC5305DFTTU from ON Semiconductor is an NPN silicon power transistor in TO-220F package, rated for 400 V V_CEO, 5 A I_C (DC), and 40 W power dissipation at T_C = 25°C, featuring integrated anti-saturation free-wheeling diode and optimized for high-voltage half-bridge lighting ballast circuits.

For engineers reviewing the KSC5305DFTTU datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/V_CBO ratings, measured t_STG ≤ 2.25 μs under defined switching conditions, confirmed R_θJC = 3.125°C/W thermal resistance, and documented built-in diode forward voltage of 1.5–1.6 V at 1–2 A.

Technical Context

This device implements a monolithic NPN bipolar junction transistor with an integrated anti-saturation free-wheeling diode-physically embedded in the same die structure-not a discrete co-packaged diode. Its switching behavior is characterized by low storage time (t_STG ≤ 2.25 μs) and fast fall time (t_F ≤ 150 ns) under specified test conditions (V_CC = 15 V, I_C = 2 A, I_B1 = 0.4 A, I_B2 = −0.4 A, L_C = 200 μH).

It operates with fixed DC current gain h_FE = 22 at I_C = 0.8 A and drops to h_FE = 8 at I_C = 2 A (V_CE = 1 V), supporting predictable base drive design across its rated current range. Saturation voltages are tightly specified: V_CE(sat) ≤ 0.4 V at I_C = 0.8 A/I_B = 0.08 A and ≤ 0.5 V at I_C = 2 A/I_B = 0.4 A.

Key Specifications

Pinout & Package

Supplied in TO-220F package: insulated plastic case with metal tab (collector-connected), 3-pin vertical lead frame, 2.54 mm pin pitch, and 10.16 mm × 15.87 mm footprint. Mounting hole ø3.18 mm centered on tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage power transistor applications.

Compared with ST13007D and MJE13009, KSC5305DFTTU provides verified low-storage-time switching and monolithic diode integration-reducing BOM count and improving timing predictability-while trading off some current headroom for system-level simplicity in lighting ballast applications.

Availability

KSC5305DFTTU is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, electronic HID lamp drivers, and LED driver PFC stages requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial lighting OEMs.

Supply support for KSC5305DFTTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic devices for automotive, industrial, cloud power, and IoT applications.

KSC5305DFTTU belongs to ON Semiconductor's legacy Fairchild high-voltage bipolar power transistor product line, designed specifically for energy-efficient lighting ballast and resonant converter applications demanding integrated diode functionality and tight switching parameter control.

FAQ

What is the maximum collector-emitter voltage rating for KSC5305DFTTU?

KSC5305DFTTU has a guaranteed V_CEO rating of 400 V at T_A = 25°C, verified per JEDEC JESD22-A108 stress testing. This rating applies under DC and pulsed conditions with I_B = 0, and remains valid up to T_J = 150°C with appropriate derating per the Safe Operating Area curve in the official datasheet. The KSC5305DFTTU datasheet confirms no degradation in V_CEO performance across production lots.

Does KSC5305DFTTU include an integrated diode, and what is its forward voltage?

Yes, KSC5305DFTTU integrates a monolithic free-wheeling diode optimized for anti-saturation operation. Its forward voltage is specified as V_F = 1.5 V at I_F = 1 A and 1.6 V at I_F = 2 A, measured at T_A = 25°C. This diode is not a separate die-it shares substrate and thermal path with the transistor, enabling matched thermal behavior and eliminating parasitic inductance from external connections. The KSC5305DFTTU datasheet explicitly states this feature under "Features" and "Electrical Characteristics."

What is the thermal resistance from junction to case (R_θJC) for KSC5305DFTTU?

KSC5305DFTTU has a measured R_θJC of 3.125°C/W, confirmed in the "Thermal Characteristics" table of the official datasheet. This value is derived from standardized JEDEC JESD51-14 testing on the TO-220F package and reflects heat transfer from the silicon die to the insulated metal tab. It enables accurate heatsink sizing: for example, at 25 W dissipation, the junction-to-case temperature rise will be ≤ 78°C. This R_θJC is a fixed characteristic of the KSC5305DFTTU package construction.

Is KSC5305DFTTU pin-compatible with standard TO-220 NPN transistors like MJE13007?

No, KSC5305DFTTU is not pin-compatible with MJE13007 or other generic TO-220 NPN transistors. While all share the same 3-pin TO-220 outline, KSC5305DFTTU uses TO-220F (insulated tab), whereas MJE13007 uses standard TO-220 (electrically conductive tab). More critically, KSC5305DFTTU's internal diode connection ties the collector to the cathode-altering circuit topology-and its base-emitter characteristics (h_FE = 22/8) differ significantly from MJE13007 (h_FE = 8–40). Direct substitution without schematic and layout review is not supported for KSC5305DFTTU.

What is the storage time (t_STG) specification for KSC5305DFTTU under typical lighting ballast conditions?

KSC5305DFTTU specifies t_STG ≤ 2.25 μs under the exact test condition used in lighting ballast validation: V_CC = 15 V, V_Z = 300 V, I_C = 2 A, I_B1 = 0.4 A, I_B2 = −0.4 A, and L_C = 200 μH. This value is measured across production units and is not a typical-only parameter-it is a guaranteed maximum. The KSC5305DFTTU datasheet lists this in the "Electrical Characteristics" table with footnote referencing Figure 9, confirming repeatability for half-bridge timing design.