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onsemi KSC5305DTU
- Part No.:
- KSC5305DTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
KSC5305DTU.pdf
- Description:
- TRANS NPN 400V 5A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,558
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Product details
Overview
KSC5305DTU from ON Semiconductor is an NPN silicon power transistor in TO-220 package, rated for 400 V VCEO, 5 A DC collector current, and 75 W power dissipation at TC = 25°C, with built-in freewheeling diode and low storage time (2.25 µs) for high-speed switching in half-bridge light ballast circuits.
For engineers reviewing the KSC5305DTU datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO rating, tSTG/tF switching performance, integrated diode forward voltage (1.5–1.6 V), and thermal resistance (RθJC = 1.65 °C/W).
Technical Context
This device is a high-voltage, high-speed NPN bipolar junction transistor optimized for hard-switched, medium-power applications where fast turn-off and controlled reverse recovery are critical. It integrates a monolithic freewheeling diode to reduce external component count and improve anti-saturation behavior during inductive load commutation.
Its design targets operation in resonant and quasi-resonant electronic ballasts, with specified safe operating area (SOA) up to 400 V/5 A under pulsed conditions and RBSOA validated for inductive switching with VBE(off) = −5 V and LC = 1 mH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 400 V - Maximum sustainable collector-emitter voltage before breakdown under open-base condition; enables use in 230 VAC line-fed ballast topologies with margin. |
| IC (DC) | 5 A - Continuous collector current capability at TC = 25°C; supports lamp drive currents up to 4 A RMS in typical CFL/HID ballast designs. |
| tSTG | 2.25 µs - Measured storage time under VCC = 15 V, IC = 2 A, IB1 = 0.4 A, IB2 = −0.4 A, LC = 200 µH; ensures predictable turn-off timing in half-bridge control. |
| VF (diode) | 1.5–1.6 V @ IF = 1–2 A - Forward voltage of integrated freewheeling diode; reduces conduction loss and eliminates need for external diode in clamp paths. |
| RθJC | 1.65 °C/W - Junction-to-case thermal resistance; allows direct mounting to heatsink with ≤45°C temperature rise at 75 W dissipation. |
| hFE | 8–22 @ VCE = 1 V - DC current gain range across IC = 0.8–2 A; supports stable base drive design without tight hFE binning. |
| Cob | 75 pF @ VCB = 10 V, f = 1 MHz - Output capacitance; impacts switching loss and gate drive requirements in high-frequency operation. |
Pinout & Package
Package: TO-220 (3-pin, straight lead, insulated tab). Case material is electrically isolated; mounting screw hole centered on tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to saturate or cut off the transistor; low base drive requirement (IB = 0.08 A for IC = 0.8 A) simplifies driver design. |
| 2 (Collector) | Main power output terminal | Connected to high-side switch node in half-bridge; rated for 400 V blocking and 10 A pulsed current (ICP). |
| 3 (Emitter) | Power return and reference terminal | Serves as common emitter node and cathode of integrated freewheeling diode; must be routed with low-inductance path in switching layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in freewheeling diode | Monolithically integrated diode with VF = 1.5–1.6 V @ 1–2 A eliminates discrete diode placement and layout parasitics in inductive clamp paths. |
| Low storage time spread | tSTG = 2.25 µs (max) under defined test conditions ensures consistent switching timing across production lots without hFE sorting. |
| High-voltage SOA | Validated Safe Operating Area up to 400 V/5 A in pulse mode and RBSOA up to 800 V with inductive turn-off supports robust operation in line-voltage ballasts. |
| Low base drive requirement | IB = 0.4 A sufficient for 2 A collector current (IC/IB = 5), reducing driver IC stress and enabling simpler gate/base drive circuitry. |
Applications
| Electronic Ballast Control | Half-Bridge Inverter Stage |
|---|---|
|
Use Scenario: Driving compact fluorescent lamps (CFL) or HID lamps in 230 VAC mains-powered lighting systems with resonant tank topology. IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge configuration, commutating inductive current through integrated diode during dead-time. Use Value: Integrated diode and 2.25 µs storage time enable precise zero-voltage switching (ZVS) initiation and reduce EMI from uncontrolled di/dt. |
Use Scenario: Power switching element in 20–50 kHz half-bridge inverters for LED drivers and AC-DC PFC front-ends. IC Role / Device Role / Timing Role: Main switching transistor handling peak currents up to 10 A (pulsed) and blocking voltages up to 400 V in bridge leg configuration. Use Value: 1.65 °C/W RθJC and 75 W power rating allow sustained operation at 4–5 A RMS without forced cooling in enclosed fixtures. |
| Inductive Load Switching | Lighting System Protection |
|
Use Scenario: Controlling solenoids, relays, and small motors in industrial control panels with 24–48 V DC supply rails. IC Role / Device Role / Timing Role: Medium-power switching transistor with integrated flyback path, eliminating external snubber components. Use Value: VCEO = 400 V and tF = 150 ns ensure reliable interruption of inductive kickback without secondary breakdown. |
Use Scenario: Overvoltage and overcurrent protection stage in smart lighting modules with microcontroller-based fault detection. IC Role / Device Role / Timing Role: Fast-turn-off power switch triggered by controller during overtemperature or short-circuit events. Use Value: Low tSTG and tF (<2.25 µs / 150 ns) enable sub-microsecond fault response, limiting energy dissipation during fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST13007D | VCEO = 400 V, IC = 8 A, no integrated diode, RθJC = 1.5 °C/W | Requires external freewheeling diode; higher current rating but larger footprint (TO-220FP) | Preferred when higher continuous current (>5 A) is needed and board space allows separate diode placement. |
| MJ11016G | VCEO = 250 V, IC = 30 A, no integrated diode, RθJC = 1.0 °C/W | Lower voltage rating limits use to 120 VAC or low-line DC systems; higher current and thermal efficiency | Applicable only in lower-voltage, high-current motor drive or audio amplifier outputs where 400 V blocking is unnecessary. |
Compared with ST13007D and MJ11016G, the KSC5305DTU uniquely combines 400 V blocking, integrated diode, and sub-µs switching timing-making it specifically suited for compact, self-contained electronic ballast stages where layout simplicity and timing predictability are prioritized over raw current headroom.
Availability
KSC5305DTU is available at Aetrix Electronics and suitable for electronic ballast control, half-bridge inverter stages, and inductive load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing for lighting OEMs and industrial control designers.
Supply support for KSC5305DTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and consumer applications.
The KSC5305DTU belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered specifically for energy-efficient lighting control and resonant switching applications demanding integrated diode functionality and tight timing control.
FAQ
What is the maximum continuous collector current rating for KSC5305DTU?
The KSC5305DTU has a maximum DC collector current (IC) rating of 5 A at case temperature TC = 25°C. Derating is required above this temperature per the power derating curve in Figure 12; at TC = 100°C, the usable IC drops to approximately 2.5 A. This rating assumes proper heatsinking with RθJC = 1.65 °C/W and ambient thermal management.
Does KSC5305DTU include an integrated freewheeling diode?
Yes, the KSC5305DTU integrates a monolithic freewheeling diode between collector and emitter, confirmed in the "Features" section and electrical characteristics table (VF = 1.5–1.6 V). This diode is not a separate component but part of the same die structure, enabling efficient anti-saturation operation without external parts.
What is the storage time (tSTG) specification for KSC5305DTU and why does it matter?
The KSC5305DTU has a maximum storage time (tSTG) of 2.25 µs under specified test conditions (VCC = 15 V, IC = 2 A, IB1 = 0.4 A, IB2 = −0.4 A, LC = 200 µH). This parameter directly affects switching speed consistency and ZVS timing accuracy in ballast circuits-low tSTG minimizes delay between base turn-off and collector current decay.
Can KSC5305DTU be used in place of KSC5305D?
Yes, KSC5305DTU is the tape-and-reel packaging variant of the KSC5305D, sharing identical electrical specifications, thermal ratings, pinout, and package dimensions (TO-220). The "TU" suffix denotes tube/tape-and-reel packaging for automated assembly; all performance data in the October-2017 Rev. 1 datasheet applies fully to KSC5305DTU.
What is the safe operating area (SOA) limit for KSC5305DTU at 250 V collector-emitter voltage?
Per Figure 11 in the datasheet, the KSC5305DTU supports up to 4 A DC collector current at VCE = 250 V with TC ≤ 25°C. For pulsed operation (10% duty cycle), the SOA extends to ~6 A at that voltage. Operation beyond these boundaries risks secondary breakdown; designers must verify layout, heatsinking, and transient conditions against the full SOA graph.
KSC5305DTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 400mA, 2A
- Current - Collector Cutoff (Max):
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 8 @ 2A, 1V
- Power - Max:
- 75 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
KSC5305DTU FAQ
1.How can I place an order for KSC5305DTU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSC5305DTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSC5305DTU reliable?
The price and inventory of KSC5305DTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC5305DTU is usually 5 days.
3.What payment methods are accepted for KSC5305DTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC5305DTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSC5305DTU?
KSC5305DTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSC5305DTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSC5305DTU?
For technical support, including KSC5305DTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC5305DTU requirements.
6.How does Aetrix verify that KSC5305DTU is sourced from the original manufacturer or authorized distributors?
All KSC5305DTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC5305DTU meets industry standards.
7.What is the process for return or replacement of KSC5305DTU?
All KSC5305DTU units undergo pre-shipment inspection (PSI). If there is an issue with KSC5305DTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSC5305DTU part is unused and in its original packaging.
Return procedure for KSC5305DTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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