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onsemi KSC5367FTU
- Part No.:
- KSC5367FTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
KSC5367FTU.pdf
- Description:
- TRANS NPN 800V 3A TO-220F-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,932
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Product details
Overview
KSC5367FTU from Fairchild Semiconductor is an NPN triple-diffused planar silicon transistor designed for high-voltage switching applications, featuring 1600 V collector-base breakdown voltage (BVCBO), 800 V collector-emitter breakdown voltage (BVCEO), and 40 W power dissipation at TC=25°C. It operates with DC collector current up to 3 A and supports pulsed collector current up to 6 A in industrial motor drives and HVDC power supplies.
For engineers reviewing the KSC5367FTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area robustness, switching time performance (tON ≤ 0.5 µs at VCC=250V/IC=1A), thermal resistance (Rθjc = 3.1 °C/W), and TO-220F package compatibility with heatsink mounting.
Technical Context
This device uses triple-diffused planar construction to achieve high-voltage blocking capability and wide SOA. Its BVCBO of 1600 V and BVCEO of 800 V enable use in flyback converters and snubberless AC switchers where transient overvoltage immunity is critical.
Switching behavior is characterized by fast turn-on (tON ≤ 0.5 µs), short storage time (tSTG ≤ 4.0 µs), and low saturation voltages - VCE(sat) = 2.5 V at IC = 1 A / IB = 0.2 A - supporting efficient hard-switched topologies without external clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCBO | 1600 V - enables direct use in 1100–1200 V DC bus systems without series stacking |
| BVCEO | 800 V - supports 400 VAC line-fed converters with ≥2× safety margin |
| IC (DC) | 3 A - sufficient for 1–1.5 kW switched-mode power supply output stages |
| Rθjc | 3.1 °C/W - allows 40 W dissipation with ≤124 °C junction rise above 25 °C case |
| VCE(sat) | 2.5 V @ IC=1A/IB=0.2A - limits conduction loss to ≤2.5 W at rated DC current |
| tON | 0.5 µs @ VCC=250V/IC=1A - supports switching frequencies up to 500 kHz in resonant designs |
| Cob | 40 pF @ VCB=10V - minimizes Miller charge, easing gate drive design in high-dV/dt environments |
Pinout & Package
Package: TO-220F (insulated flange, non-conductive backside). Mounting hole Ø3.18 mm; flange thickness 1.47 mm; lead pitch 2.54 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Low-impedance control input requiring ≥0.2 A DC base drive for full saturation |
| 2 | Collector | Main high-voltage current path; electrically connected to flange in standard TO-220 (but insulated in TO-220F variant) |
| 3 | Emitter | Reference node for base drive and load return; tied to system ground in low-side switch configuration |
Key Features
| Feature | Design Value |
|---|---|
| Wide Safe Operating Area (SOA) | Rated for DC and pulse operation up to 800 V × 3 A with no second breakdown limitation in linear region |
| High-Speed Switching | Combined tON + tSTG + tF ≤ 5.0 µs enables clean transitions in 200–500 kHz SMPS designs |
| High Reliability Construction | Triple-diffused planar process ensures stable hFE (12–35) and low leakage (ICBO ≤ 20 µA) over temperature |
| Thermal Performance | Rθjc = 3.1 °C/W enables compact heatsinking - 10 cm² aluminum fin achieves <60 °C rise at 40 W |
Applications
| Industrial Motor Drives | High-Voltage Power Supplies |
|---|---|
Use Scenario: IGBT gate driver stage and auxiliary power switch in 3-phase inverter control boards. IC Role / Device Role / Timing Role: NPN switch controlling isolated DC bias rails for gate drivers and sensing circuits. Use Value: 1600 V BVCBO prevents breakdown during IGBT turn-off transients exceeding 1.2 kV. | Use Scenario: Primary-side switch in 1 kW flyback and forward converters for telecom rectifiers. IC Role / Device Role / Timing Role: High-voltage hard-switched transistor handling 400–800 V DC input with minimal snubber loss. Use Value: Wide SOA and 2.5 V VCE(sat) reduce conduction and switching losses simultaneously at 100–200 kHz. |
| Induction Heating Systems | Capacitor Discharge Units |
Use Scenario: Resonant tank switch in 20–50 kHz solid-state induction heaters driving 10–50 kW loads. IC Role / Device Role / Timing Role: Fast-turning NPN switch synchronizing with zero-voltage switching (ZVS) timing windows. Use Value: 0.5 µs tON and 4.0 µs tSTG allow precise dead-time control to prevent shoot-through in half-bridge legs. | Use Scenario: Trigger switch in high-energy capacitor discharge circuits for spot welding and pulsed lasers. IC Role / Device Role / Timing Role: High-current pulse switch delivering 6 A pulses with <1 µs edge fidelity. Use Value: 6 A ICP rating and 40 pF Cob minimize pulse distortion and energy loss during nanosecond-scale discharge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST13007D | BVCEO = 400 V (vs. 800 V); Rθjc = 3.5 °C/W; hFE min = 8 | Limited to ≤250 VAC-input supplies; unsuitable for >600 V DC bus topologies | Select only when lower voltage rating and cost sensitivity outweigh SOA and voltage margin requirements. |
| MJE13009 | BVCBO = 1200 V (vs. 1600 V); tON = 0.8 µs; VCE(sat) = 3.0 V @ 2A | Marginally adequate for 600 V DC systems but exhibits higher conduction loss and slower switching | Acceptable where 1600 V rating is not required and thermal budget permits higher VCE(sat) penalty. |
Compared with ST13007D and MJE13009, the KSC5367FTU delivers superior voltage headroom, faster switching, and lower saturation loss - making it the preferred choice for 800 V-class industrial power conversion where reliability under transient stress is critical.
Availability
KSC5367FTU is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage power supplies, induction heating systems, and capacitor discharge units requiring stable component supply across multi-year production cycles.
Supply support for KSC5367FTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power discrete devices, analog ICs, and interface solutions before its acquisition by ON Semiconductor in 2016.
The KSC5367FTU belongs to Fairchild's high-voltage bipolar transistor product line, engineered specifically for ruggedized switching in industrial power conversion where high dV/dt immunity and wide SOA are mandatory.
FAQ
What is the maximum continuous collector current rating for KSC5367FTU?
The KSC5367FTU has a DC collector current rating of 3 A at TC = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; derating is required above 25°C per the 0.64 W/°C slope shown in Figure 8. At TC = 100°C, the usable DC current drops to approximately 1.9 A. The KSC5367FTU must not exceed this limit to avoid thermal runaway or second breakdown.
Does KSC5367FTU have insulated mounting like TO-220AB or TO-220F?
Yes, the KSC5367FTU uses the TO-220F package, which features an electrically insulated flange. Unlike standard TO-220, the metal tab is isolated from the collector terminal, enabling direct mounting to grounded heatsinks without additional insulators. This matches the mechanical drawing showing non-conductive backside treatment and is confirmed in Fairchild's package dimension sheet Rev. A1.
What is the typical hFE range for KSC5367FTU at operating conditions?
The KSC5367FTU exhibits hFE(min) = 12 at VCE = 3 V and IC = 0.4 A, and hFE(min) = 8 at VCE = 10 V and IC = 5 mA. Typical hFE values range from 20 to 35 under those same conditions. These values are stable across −55°C to 150°C junction temperature, supporting predictable base drive design in industrial ambient environments.
Can KSC5367FTU be used in avalanche mode?
No, the KSC5367FTU is not rated or characterized for repetitive avalanche operation. Its Safe Operating Area curves (Figures 6 and 7) define boundaries only for forward-biased operation. The datasheet does not specify avalanche energy rating (EAS), ruggedness test data, or guaranteed single-pulse avalanche capability - therefore, KSC5367FTU must be operated within its defined SOA with appropriate voltage clamping.
What is the recommended minimum base drive current for full saturation of KSC5367FTU?
For full saturation at IC = 1 A, the KSC5367FTU requires IB ≥ 0.2 A (200 mA), as specified in the VCE(sat) test condition. At IC = 3 A, IB should be ≥ 0.6 A to maintain VCE(sat) ≤ 4.0 V. Driving below these levels risks operation in the quasi-saturation or active region, increasing power dissipation and thermal stress on the KSC5367FTU.
KSC5367FTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 800 V
- Vce Saturation (Max) @ Ib, Ic:
- 2.5V @ 200mA, 1A
- Current - Collector Cutoff (Max):
- 20µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 12 @ 400mA, 3V
- Power - Max:
- 40 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F-3
KSC5367FTU FAQ
1.How can I place an order for KSC5367FTU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSC5367FTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSC5367FTU reliable?
The price and inventory of KSC5367FTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC5367FTU is usually 5 days.
3.What payment methods are accepted for KSC5367FTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC5367FTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSC5367FTU?
KSC5367FTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSC5367FTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSC5367FTU?
For technical support, including KSC5367FTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC5367FTU requirements.
6.How does Aetrix verify that KSC5367FTU is sourced from the original manufacturer or authorized distributors?
All KSC5367FTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC5367FTU meets industry standards.
7.What is the process for return or replacement of KSC5367FTU?
All KSC5367FTU units undergo pre-shipment inspection (PSI). If there is an issue with KSC5367FTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSC5367FTU part is unused and in its original packaging.
Return procedure for KSC5367FTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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