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onsemi KSC5504DTM
- Part No.:
- KSC5504DTM
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
KSC5504DTM.pdf
- Description:
- TRANS NPN 600V 4A TO-252AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,767
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Product details
Overview
KSC5504DTM from Fairchild Semiconductor is an NPN triple-diffused planar silicon power transistor designed for high-voltage, high-speed switching in electronic ballasts and inductive load circuits. It features 1200 V collector-base voltage, 600 V collector-emitter voltage, 4 A DC collector current, built-in free-wheeling diode, and 75 W collector dissipation at TC=25°C.
For engineers reviewing the KSC5504DTM datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche energy rating (3 mJ), storage time stability (1.5–4.5 µs across temperature/load), dynamic saturation voltage under inductive switching (≤10 V @ 1 µs), and thermal resistance (1.65 °C/W junction-to-case).
Technical Context
This device operates as a high-voltage bipolar junction transistor with integrated anti-parallel diode, enabling self-contained flyback energy handling in resonant and inductive switching topologies. Its wide safe operating area (SOA) supports pulse operation up to 8 A with 5 ms pulse width and ≤10% duty cycle, and its forced gain (hFE) remains ≥3 at IC=2 A, IB=0.4 A across 25–125°C.
The KSC5504DTM delivers fast switching performance: typical turn-on time of 160–300 ns, fall time of 125–850 ns depending on load type and temperature, and crossover time under 1.1 µs in inductive conditions. Diode forward recovery time is specified at 770–1200 ns, supporting high-frequency ballast operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 1200 V - Maximum reverse bias voltage the collector-base junction withstands without breakdown; enables use in >600 V DC bus applications. |
| VCEO | 600 V - Sustains full blocking voltage between collector and emitter with base open; defines primary high-side switch rating. |
| IC (DC) | 4 A - Continuous collector current capability at TC=25°C; supports sustained 50–100 W lamp drive in electronic ballasts. |
| PC (TC=25°C) | 75 W - Maximum steady-state power dissipation at case temperature 25°C; requires heatsinking for >40 W average loads. |
| Rθjc | 1.65 °C/W - Junction-to-case thermal resistance; allows direct thermal interface to heatsink for efficient thermal management. |
| EAS | 3 mJ - Single-pulse avalanche energy rating at TJ=25°C; provides robustness against inductive kickback without external snubbers. |
| fT | 11 MHz - Current gain bandwidth product at IC=0.5 A, VCE=10 V; confirms suitability for >100 kHz switching frequencies. |
Pinout & Package
Package: TO-220 (3-pin, straight lead, insulated tab). Dimensions conform to standard TO-220 mechanical outline per Fairchild datasheet Rev. A1 (June 2001), with 2.54 mm lead pitch and 15.90 mm body length.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base drive current (up to 2 A DC / 4 A pulse) to saturate or cut off the transistor; requires current-limited driver stage. |
| 2 (Collector) | Main power output terminal | Carries switched high-voltage, high-current load path; electrically connected to metal tab in TO-220 package for thermal conduction. |
| 3 (Emitter) | Power return and reference node | Serves as common emitter node for BJT operation and cathode connection for integrated free-wheeling diode. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in free-wheeling diode | Integrated anti-parallel diode with VF = 0.83–1.5 V (IF = 1–2 A) eliminates need for external flyback diode in half-bridge or single-ended inductive drivers. |
| Wide Safe Operating Area (SOA) | Rated for 1000 V × 1 A and 500 V × 2 A in DC and pulse conditions; supports reliable operation under transient overloads in lighting and motor control. |
| Small variance in storage time | Storage time tSTG = 1.5–4.5 µs across temperature (25–125°C) and load (IC = 1–2 A); ensures consistent switching timing in frequency-controlled ballasts. |
| High avalanche ruggedness | 3 mJ single-pulse avalanche energy rating enables reliable operation during inductive turn-off without external clamping. |
| Two package options | Available in both TO-220 and D2-PAK; KSC5504DTM specifically uses TO-220 for cost-sensitive, medium-power ballast designs with standard mounting. |
Applications
| Electronic Ballast Control | Inductive Load Switching |
|---|---|
Use Scenario: Driving resonant LC tank in compact fluorescent lamp (CFL) or HID lamp electronic ballasts operating at 20–100 kHz. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling lamp current via half-bridge topology; handles 300–600 V DC bus and manages flyback energy via integrated diode. Use Value: Eliminates discrete flyback diode, reduces board space by ~15%, and maintains stable storage time across ambient temperatures for consistent lamp ignition. | Use Scenario: Controlling solenoid valves or relay coils in industrial automation systems with 24–48 V supply and inductive energy recovery. IC Role / Device Role / Timing Role: Main power switch turning on/off inductive loads; integrated diode recirculates coil current during turn-off. Use Value: Reduces component count and PCB footprint while maintaining <4.5 µs storage time at 125°C-critical for fast-cycle valve actuation. |
| High-Voltage DC-DC Converter | Resonant Power Supply |
Use Scenario: Primary-side switch in flyback or forward converters targeting 400–600 V output isolation stages. IC Role / Device Role / Timing Role: High-voltage switching element handling 600 V blocking and 4 A peak current; avalanche-rated for transformer leakage energy absorption. Use Value: 3 mJ EAS rating avoids need for TVS clamping, simplifying design and improving reliability in unregulated input conditions. | Use Scenario: Half-bridge switch in LLC resonant converters for LED drivers and telecom power supplies. IC Role / Device Role / Timing Role: Fast-switching NPN transistor managing zero-voltage switching transitions; low Cob (75–100 pF) minimizes capacitive losses at 100–500 kHz. Use Value: 11 MHz fT and sub-300 ns fall time enable efficient operation above 200 kHz, reducing magnetic component size and audible noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST13007D | 600 V VCEO, 8 A ICP, TO-220 package, no integrated diode, Rθjc = 1.5 °C/W | Requires external flyback diode; higher peak current but less integrated functionality | Select when higher pulse current (8 A) is needed and board space permits discrete diode placement. |
| MJE13009 | 400 V VCEO, 12 A ICP, TO-220, no integrated diode, Rθjc = 1.25 °C/W | Limited to ≤400 V bus; higher current but lower voltage rating than KSC5504DTM | Choose for lower-voltage, higher-current applications where avalanche energy and 600 V blocking are not required. |
Compared with ST13007D and MJE13009, the KSC5504DTM uniquely combines 600 V blocking, integrated diode, and 3 mJ avalanche rating in a TO-220 package-making it optimal for space-constrained, high-reliability electronic ballast and resonant converter designs where diode integration and SOA margin are critical.
Availability
KSC5504DTM is available at Aetrix Electronics and suitable for electronic ballast control, inductive load switching, and high-voltage DC-DC converter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for KSC5504DTM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016. Its legacy products remain widely deployed in industrial and lighting systems.
The KSC5504DTM belongs to Fairchild's high-voltage power transistor family engineered for electronic lighting ballasts and resonant switching power supplies-emphasizing ruggedness, integrated diode functionality, and stable timing parameters across temperature.
FAQ
What is the maximum collector-emitter voltage rating for the KSC5504DTM?
The KSC5504DTM has a maximum collector-emitter voltage (VCEO) rating of 600 V at TC = 25°C with base open. This rating is confirmed in the Absolute Maximum Ratings table and applies to continuous DC blocking conditions. Derating is required above 25°C case temperature per the power derating curve in the datasheet.
Does the KSC5504DTM include an integrated diode, and what are its forward voltage characteristics?
Yes, the KSC5504DTM includes a built-in free-wheeling diode. Its forward voltage (VF) is 0.83–1.3 V at IF = 1 A and TC = 25°C, and 0.7–0.8 V at IF = 1 A and TC = 125°C. At IF = 2 A, VF ranges from 0.88–1.5 V (25°C) and 0.8 V (125°C), as specified in the Electrical Characteristics table.
What is the thermal resistance junction-to-case (Rθjc) for the KSC5504DTM, and how does it impact heatsink design?
The KSC5504DTM has a junction-to-case thermal resistance (Rθjc) of 1.65 °C/W. This value means that for every watt of power dissipated at the collector, the junction temperature rises 1.65°C above the case temperature. Effective heatsinking must maintain case temperature ≤100°C to keep junction temperature within the 150°C limit, especially at >40 W dissipation.
How does the KSC5504DTM perform in inductive switching applications, particularly regarding storage time and fall time?
In inductive switching with VCC = 300 V and LC = 200 µH, the KSC5504DTM exhibits storage time (tSTG) of 1.75–4.5 µs and fall time (tF) of 100–850 ns across 25–125°C. These values are measured under standardized test conditions and confirm stable timing behavior essential for reliable operation in electronic ballasts and solenoid drivers.
Is the KSC5504DTM pin-compatible with other TO-220 NPN transistors such as the MJE13009 or ST13007D?
No, the KSC5504DTM is not pin-compatible with MJE13009 or ST13007D in terms of internal structure or diode integration, though all share the same TO-220 mechanical outline and pin assignment (Base–Collector–Emitter). The KSC5504DTM's integrated diode connects emitter to collector internally, altering circuit-level connectivity versus discrete-transistor alternatives.
KSC5504DTM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 400mA, 2A
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 4 @ 2A, 1V
- Power - Max:
- 75 W
- Frequency - Transition:
- 11MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
KSC5504DTM FAQ
1.How can I place an order for KSC5504DTM through Aetrix?
Please submit a Request for Quotation (RFQ) for KSC5504DTM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSC5504DTM reliable?
The price and inventory of KSC5504DTM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC5504DTM is usually 5 days.
3.What payment methods are accepted for KSC5504DTM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC5504DTM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSC5504DTM?
KSC5504DTM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSC5504DTM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSC5504DTM?
For technical support, including KSC5504DTM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC5504DTM requirements.
6.How does Aetrix verify that KSC5504DTM is sourced from the original manufacturer or authorized distributors?
All KSC5504DTM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC5504DTM meets industry standards.
7.What is the process for return or replacement of KSC5504DTM?
All KSC5504DTM units undergo pre-shipment inspection (PSI). If there is an issue with KSC5504DTM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSC5504DTM part is unused and in its original packaging.
Return procedure for KSC5504DTM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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