Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSC815CYBU

Name: KSC815CYBU
Brand: onsemi
SKU: KSC815CYBU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: KSC815CYBU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: KSC815CYBU.pdf

Description:: TRANS NPN 45V 0.2A TO-92-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,367

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

KSC815CYBU from ON Semiconductor is an NPN epitaxial silicon transistor designed for low-frequency amplification and high-frequency oscillator circuits, with V_CBO = 60 V, V_CEO = 45 V, I_C = 200 mA, P_C = 400 mW, and f_T up to 200 MHz - commonly used in audio preamplifiers, RF signal generators, and discrete switching stages in consumer electronics.

For engineers reviewing the KSC815CYBU datasheet, pinout, applications, or equivalent options, this page delivers verified package mapping (TO-92, side-collector configuration), h_FE classification (Y: 120–240), saturation voltage specs (V_CE(sat) ≤ 0.40 V @ I_C = 150 mA), and validated alternative options for discrete BJT replacement.

Technical Context

The KSC815CYBU operates as a general-purpose NPN bipolar junction transistor with epitaxial base construction enabling stable gain and high f_T performance. Its absolute maximum ratings include T_J = 150°C and V_EBO = 5 V, supporting reliable operation in ambient-temperature-constrained PCB layouts.

It features a side-collector TO-92 pinout (Emitter–Base–Collector, pins 1–2–3), distinct from the center-collector "-C" suffix variants. Electrical behavior is characterized under standard test conditions: V_CE = 1 V for h_FE, V_CE = 10 V for f_T, and V_CB = 10 V for C_ob = 4 pF.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CBO	60 V - Maximum reverse bias voltage between collector and base before breakdown; defines safe operating range in common-base configurations.
I_C	200 mA - Continuous DC collector current handling capacity; supports medium-power analog and switching loads.
f_T	100–200 MHz - Current gain bandwidth product; enables use in VHF oscillators and narrowband RF amplifiers up to ~100 MHz.
V_CE(sat)	0.15–0.40 V @ I_C = 150 mA, I_B = 15 mA - Low saturation voltage ensures minimal conduction loss in linear and switching applications.
h_FE (Y-class)	120–240 @ V_CE = 1 V, I_C = 50 mA - Tight DC current gain binning improves predictability in bias-critical amplifier designs.
C_ob	4 pF @ V_CB = 10 V, f = 1 MHz - Low output capacitance minimizes frequency-dependent phase shift in tuned circuits.
P_C	400 mW - Total power dissipation limit at T_A = 25°C; requires thermal derating above 25°C per R_θJA = 310°C/W.

Pinout & Package

Package: TO-92, 3-lead molded plastic, side-collector configuration (suffix "Y" denotes Y-class h_FE; no "-C" suffix confirms side-collector orientation).

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current sink terminal; connected to ground or low-impedance return path in common-emitter amplifiers.
2	Base	Control input; requires current-limited drive (e.g., via resistor) to bias transistor into active/saturation region.
3	Collector	Current source terminal; connects to load and supply rail in switching or amplification topologies.

Key Features

Feature	Design Value
Low-frequency amplifier capability	Stable h_FE and low V_BE(on) (0.60–0.90 V) enable predictable DC biasing in audio and sensor interface stages.
High-frequency oscillator support	f_T up to 200 MHz and C_ob = 4 pF allow integration into Colpitts or Hartley oscillator tanks up to VHF band.
Complementary pairing	Designed as NPN complement to KSA539 PNP transistor, enabling push-pull and differential pair implementations.
Thermal robustness	Junction temperature rating of 150°C and defined R_θJA = 310°C/W support operation in non-ventilated consumer enclosures.

Applications

Audio Preamp Stage	RF Local Oscillator
Use Scenario: Discrete gain stage in portable AM/FM radio front-end, amplifying weak antenna signals prior to mixer input. IC Role / Device Role / Timing Role: NPN small-signal amplifier operating in common-emitter configuration with fixed bias network. Use Value: Y-class h_FE (120–240) ensures consistent voltage gain across production units; low V_CE(sat) preserves headroom in single-supply 3–9 V systems.	Use Scenario: Active device in Colpitts oscillator generating 30–80 MHz local oscillator signal for superheterodyne receiver. IC Role / Device Role / Timing Role: Frequency-determining active element sustaining oscillation via positive feedback through LC tank. Use Value: f_T ≥ 100 MHz and C_ob = 4 pF minimize phase noise and enable stable oscillation without external neutralization.
DC Motor Driver Switch	Signal Level Shifter
Use Scenario: Low-side switch controlling 12 V, <100 mA brushed DC motor in battery-powered toys or actuators. IC Role / Device Role / Timing Role: Saturated-switching NPN transistor driven by microcontroller GPIO. Use Value: V_CE(sat) ≤ 0.40 V reduces power loss and heat generation; I_C = 200 mA provides 2× safety margin over motor stall current.	Use Scenario: Bidirectional logic-level translation between 3.3 V MCU and 5 V peripheral using open-collector configuration. IC Role / Device Role / Timing Role: Discrete level-shifting transistor in unidirectional or bidirectional bus interface. Use Value: V_EBO = 5 V allows safe 5 V pull-up on emitter; h_FE > 120 ensures full saturation with low base drive current.

Audio Preamp Stage

RF Local Oscillator

Use Scenario: Discrete gain stage in portable AM/FM radio front-end, amplifying weak antenna signals prior to mixer input.

IC Role / Device Role / Timing Role: NPN small-signal amplifier operating in common-emitter configuration with fixed bias network.

Use Value: Y-class h_FE (120–240) ensures consistent voltage gain across production units; low V_CE(sat) preserves headroom in single-supply 3–9 V systems.

Use Scenario: Active device in Colpitts oscillator generating 30–80 MHz local oscillator signal for superheterodyne receiver.

IC Role / Device Role / Timing Role: Frequency-determining active element sustaining oscillation via positive feedback through LC tank.

Use Value: f_T ≥ 100 MHz and C_ob = 4 pF minimize phase noise and enable stable oscillation without external neutralization.

DC Motor Driver Switch

Signal Level Shifter

Use Scenario: Low-side switch controlling 12 V, <100 mA brushed DC motor in battery-powered toys or actuators.

IC Role / Device Role / Timing Role: Saturated-switching NPN transistor driven by microcontroller GPIO.

Use Value: V_CE(sat) ≤ 0.40 V reduces power loss and heat generation; I_C = 200 mA provides 2× safety margin over motor stall current.

Use Scenario: Bidirectional logic-level translation between 3.3 V MCU and 5 V peripheral using open-collector configuration.

IC Role / Device Role / Timing Role: Discrete level-shifting transistor in unidirectional or bidirectional bus interface.

Use Value: V_EBO = 5 V allows safe 5 V pull-up on emitter; h_FE > 120 ensures full saturation with low base drive current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC547C	Lower V_CBO (50 V), lower f_T (300 MHz typ but not guaranteed min), h_FE bin C = 420–800 - wider spread, less predictable gain.	Not recommended for 45–60 V collector swing; suitable only for ≤30 V supply rails and non-critical gain stability.	Select BC547C only when higher h_FE is prioritized over voltage rating and gain consistency.
MPSA18	Higher V_CBO (60 V same), higher I_C (500 mA), but larger TO-92 variant (longer leads, different lead spacing); f_T = 100 MHz min.	Compatible in high-current switching but requires PCB footprint verification; not drop-in due to mechanical differences.	Choose MPSA18 when >200 mA collector current or enhanced ruggedness is required; verify TO-92 variant compatibility.

Compared with BC547C and MPSA18, the KSC815CYBU offers tighter h_FE binning (Y-class), guaranteed f_T minimum, and precise side-collector TO-92 pinout - making it preferable for production-grade audio and RF designs where parameter consistency and layout repeatability matter.

Availability

KSC815CYBU is available at Aetrix Electronics and suitable for audio preamplifiers, RF oscillator circuits, DC motor control stages, and logic-level translation requiring stable component supply and consistent h_FE performance across manufacturing lots.

Supply support for KSC815CYBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power and signal management solutions, with roots in Fairchild Semiconductor's discrete and analog legacy.

The KSC815CYBU belongs to ON Semiconductor's legacy general-purpose BJT product line, originally developed by Fairchild for cost-sensitive, high-reliability discrete amplifier and oscillator applications in consumer and industrial electronics.

FAQ

What is the pin configuration of the KSC815CYBU?

The KSC815CYBU uses a TO-92 package with side-collector pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This is confirmed by the "no -C suffix" designation in the datasheet, distinguishing it from center-collector variants like KSC815C. The KSC815CYBU pinout is standardized across production lots and matches JEDEC TO-92 mechanical specifications.

What does the "Y" suffix mean in KSC815CYBU?

The "Y" suffix in KSC815CYBU indicates h_FE classification per Fairchild/ON Semiconductor binning: Y-class specifies DC current gain between 120 and 240 at V_CE = 1 V and I_C = 50 mA. This bin ensures tighter gain tolerance than R- or O-class variants, improving design predictability in amplifier bias networks.

Is the KSC815CYBU suitable for RF oscillator applications?

Yes, the KSC815CYBU is explicitly rated for high-frequency oscillator use, with f_T specified from 100 MHz to 200 MHz and C_ob = 4 pF at V_CB = 10 V. These parameters support stable operation in Colpitts and Hartley oscillator topologies up to approximately 80 MHz, as validated in Fairchild's typical performance curves.

How does the KSC815CYBU compare to the KSA539?

The KSC815CYBU is the designated NPN complement to the PNP KSA539 transistor. They share matching voltage ratings (V_CBO = 60 V, V_CEO = 45 V), thermal characteristics, and TO-92 packaging - enabling direct use in complementary emitter-follower, push-pull, or differential pair circuits without redesign.

What is the maximum power dissipation of the KSC815CYBU?

The KSC815CYBU has a maximum collector power dissipation (P_C) of 400 mW at T_A = 25°C, with thermal resistance R_θJA = 310°C/W. Derating is required above 25°C: power must be reduced by 1.29 mW/°C, reaching zero at T_A ≈ 155°C. This limit applies to continuous DC operation on standard FR-4 PCBs per datasheet test conditions.

KSC815CYBU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 15mA, 150mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 50mA, 1V

Power - Max:: 400 mW

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

KSC815CYBU FAQ

1.How can I place an order for KSC815CYBU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC815CYBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC815CYBU reliable?

The price and inventory of KSC815CYBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC815CYBU is usually 5 days.

3.What payment methods are accepted for KSC815CYBU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC815CYBU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC815CYBU?

KSC815CYBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC815CYBU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC815CYBU?

For technical support, including KSC815CYBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC815CYBU requirements.

6.How does Aetrix verify that KSC815CYBU is sourced from the original manufacturer or authorized distributors?

All KSC815CYBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC815CYBU meets industry standards.

7.What is the process for return or replacement of KSC815CYBU?

All KSC815CYBU units undergo pre-shipment inspection (PSI). If there is an issue with KSC815CYBU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC815CYBU part is unused and in its original packaging.

Return procedure for KSC815CYBU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…