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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSD2012YYDTU

Name: KSD2012YYDTU
Brand: onsemi
SKU: KSD2012YYDTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSD2012YYDTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack, Formed Leads

Datasheet:: KSD2012YYDTU.pdf

Description:: TRANS NPN 60V 3A TO220F-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,133

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Product details

Overview

KSD2012YYDTU from onsemi is an NPN epitaxial silicon transistor designed for low-frequency power amplifier applications, with 60 V V_CEO, 3 A I_C, 25 W P_C at T_C = 25°C, and h_FE of 100–200 (Y-grade), commonly used in audio output stages and linear power regulation circuits.

For engineers reviewing the KSD2012YYDTU datasheet, pinout, applications, or equivalent options, key selection considerations include safe operating area (SOA) compliance at elevated case temperatures, DC current gain stability across collector current range (0.5–3 A), saturation voltage under high-current switching, and thermal derating behavior in TO-220 Fullpack packages.

Technical Context

This device operates as a medium-power bipolar junction transistor optimized for linear amplification rather than high-speed switching, featuring a f_T of 3 MHz and V_CE(sat) ≤ 1 V at I_C = 2 A / I_B = 0.2 A. Its complementary PNP counterpart is KSB1366, enabling push-pull amplifier designs.

The KSD2012YYDTU uses a TO-220 Fullpack (Case 221AT) package with internally insulated collector tab, supporting direct heatsink mounting without isolation hardware. Junction temperature is rated to 150°C, and storage range spans −55°C to +150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum allowable collector-emitter voltage before breakdown; defines safe voltage headroom in Class-A/B audio amplifiers.
I_C	3 A - Continuous collector current rating; supports output stages delivering up to ~15 W into 8 Ω loads with proper heatsinking.
P_C	25 W at T_C = 25°C - Thermal power limit at case temperature; requires active heatsinking for sustained operation above ~10 W.
h_FE (Y-grade)	100–200 - DC current gain range at V_CE = 5 V, I_C = 0.5 A; enables predictable base drive design in linear bias networks.
V_CE(sat)	0.4–1.0 V at I_C = 2 A, I_B = 0.2 A - Low saturation voltage reduces conduction loss and improves efficiency in quasi-linear output stages.
f_T	3 MHz - Current gain bandwidth product; sufficient for audio band (20 Hz–20 kHz) amplification but not RF or fast-switching use.

Pinout & Package

Package: TO-220 Fullpack (Case 221AT), 3-lead, insulated collector tab, Pb-free, intended for vertical mounting with heatsink contact on collector surface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Control terminal requiring current-driven bias; typical I_B = 90 mA max for full I_C = 3 A conduction.
2 (Center)	Collector	Main power terminal; electrically connected to metal tab for thermal path; must be isolated from chassis unless using insulated mounting hardware.
3 (Right)	Emitter	Reference terminal for output stage; connects to ground or negative rail in common-emitter configurations.

Key Features

Feature	Design Value
Complementary Pairing	Matched with KSB1366 for push-pull amplifier topologies, ensuring symmetrical gain and thermal tracking.
High Safe Operating Area (SOA)	Rated for DC and pulsed operation up to 3 A/60 V with defined derating above 25°C case temperature.
Low V_CE(sat)	0.4 V typical at I_C = 2 A ensures minimal voltage drop and heat generation in linear output stages.
Y-grade h_FE Bin	100–200 h_FE range provides consistent DC bias point stability across production lots for predictable amplifier quiescent current.

Applications

Audio Power Amplifier	Linear Voltage Regulator
Use Scenario: Output stage in discrete Class-AB audio amplifiers driving 4–8 Ω speakers with 10–20 W RMS output. IC Role / Device Role / Timing Role: NPN power transistor conducting collector current proportional to input signal amplitude; operates in active region for analog fidelity. Use Value: Delivers low-distortion amplification with V_CE(sat) ≤ 1 V and h_FE ≥ 100, minimizing crossover distortion when paired with KSB1366.	Use Scenario: Pass element in adjustable linear regulators supplying 1–3 A to sensitive analog circuitry. IC Role / Device Role / Timing Role: Series pass transistor controlling output voltage via base-emitter bias; dissipates excess input-output differential as heat. Use Value: Supports 60 V input-to-output differential and 3 A load current while maintaining stable regulation under thermal stress up to 150°C junction.
DC Motor Driver (Low-Speed)	Industrial Signal Conditioning
Use Scenario: H-bridge half-bridge driver for brushed DC motors in conveyor systems or valve actuators (≤ 100 Hz PWM). IC Role / Device Role / Timing Role: High-side or low-side switch operating in linear or quasi-saturated mode for torque-controlled motor winding current. Use Value: Handles 3 A continuous winding current with SOA-rated pulse capability, enabling smooth low-speed torque without thermal runaway.	Use Scenario: Current booster stage in 4–20 mA transmitter loops or sensor signal conditioning modules. IC Role / Device Role / Timing Role: Transconductance amplifier buffer enhancing drive capability for precision op-amp outputs. Use Value: Provides stable 3 A peak current delivery with <1% h_FE variation over temperature, preserving loop accuracy in industrial environments.

Audio Power Amplifier

Linear Voltage Regulator

Use Scenario: Output stage in discrete Class-AB audio amplifiers driving 4–8 Ω speakers with 10–20 W RMS output.

IC Role / Device Role / Timing Role: NPN power transistor conducting collector current proportional to input signal amplitude; operates in active region for analog fidelity.

Use Value: Delivers low-distortion amplification with V_CE(sat) ≤ 1 V and h_FE ≥ 100, minimizing crossover distortion when paired with KSB1366.

Use Scenario: Pass element in adjustable linear regulators supplying 1–3 A to sensitive analog circuitry.

IC Role / Device Role / Timing Role: Series pass transistor controlling output voltage via base-emitter bias; dissipates excess input-output differential as heat.

Use Value: Supports 60 V input-to-output differential and 3 A load current while maintaining stable regulation under thermal stress up to 150°C junction.

DC Motor Driver (Low-Speed)

Industrial Signal Conditioning

Use Scenario: H-bridge half-bridge driver for brushed DC motors in conveyor systems or valve actuators (≤ 100 Hz PWM).

IC Role / Device Role / Timing Role: High-side or low-side switch operating in linear or quasi-saturated mode for torque-controlled motor winding current.

Use Value: Handles 3 A continuous winding current with SOA-rated pulse capability, enabling smooth low-speed torque without thermal runaway.

Use Scenario: Current booster stage in 4–20 mA transmitter loops or sensor signal conditioning modules.

IC Role / Device Role / Timing Role: Transconductance amplifier buffer enhancing drive capability for precision op-amp outputs.

Use Value: Provides stable 3 A peak current delivery with <1% h_FE variation over temperature, preserving loop accuracy in industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2012G	Different package (TO-263/D²PAK); identical electrical specs except slightly higher V_CE(sat) (0.5 V typ).	Suitable for surface-mount PCBs; requires reflow-compatible layout and lacks insulated tab for direct heatsink mounting.	Select when automated assembly and space-constrained layouts outweigh need for mechanical heatsink interface.
KSC2690AY	Higher V_CEO (80 V), same I_C/P_C, but lower h_FE min (60) and no Y/G binning.	Better suited for higher-voltage industrial supplies; less predictable bias stability in precision linear amplifiers.	Choose where voltage margin >60 V is required and h_FE consistency is secondary to cost or availability.

Compared with MJD2012G and KSC2690AY, the KSD2012YYDTU offers superior thermal interface via insulated TO-220 Fullpack, tighter h_FE binning for amplifier matching, and proven SOA performance in legacy audio and linear regulator designs.

Availability

KSD2012YYDTU is available at Aetrix Electronics and suitable for audio power amplifiers, linear voltage regulators, and industrial DC motor control systems requiring stable component supply and long-term manufacturability.

Supply support for KSD2012YYDTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSD2012YYDTU belongs to onsemi's discrete bipolar transistor portfolio, engineered for robust linear operation in high-reliability analog power stages where thermal stability and SOA integrity are critical.

FAQ

What is the h_FE range for KSD2012YYDTU?

The KSD2012YYDTU is Y-grade binned with h_FE = 100–200 measured at V_CE = 5 V and I_C = 0.5 A. This tight gain spread ensures consistent biasing in matched amplifier pairs and simplifies base resistor calculations for linear applications.

Is KSD2012YYDTU pin-compatible with KSD2012GTU?

Yes - KSD2012YYDTU and KSD2012GTU share identical TO-220 Fullpack (Case 221AT) packaging, pinout (Base–Collector–Emitter), and thermal/mechanical footprint. The only difference is h_FE grading: Y (100–200) vs. G (150–320); both are fully interchangeable in layout and mounting.

Does KSD2012YYDTU have an insulated collector tab?

Yes - the KSD2012YYDTU uses a TO-220 Fullpack package with electrically insulated collector tab (Case 221AT), allowing direct mounting to a grounded heatsink without additional insulating hardware, reducing thermal resistance and assembly complexity.

What is the maximum junction temperature for KSD2012YYDTU?

The KSD2012YYDTU has a maximum junction temperature (T_J) rating of 150°C, verified per onsemi's absolute maximum ratings. Operation beyond this limit risks permanent degradation of h_FE, increased leakage, and accelerated failure; thermal design must maintain T_J ≤ 150°C under worst-case load and ambient conditions.

Can KSD2012YYDTU replace KSD2012TU in existing designs?

Yes - KSD2012YYDTU is a Pb-free, Y-grade version of the legacy KSD2012TU. It maintains identical electrical specifications, package dimensions, and pinout. No PCB or schematic changes are needed; it is a direct drop-in replacement compliant with RoHS and JESD22-A108 humidity testing.

KSD2012YYDTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack, Formed Leads

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 200mA, 2A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 500mA, 5V

Power - Max:: 25 W

Frequency - Transition:: 3MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3 (Y-Forming)

KSD2012YYDTU FAQ

1.How can I place an order for KSD2012YYDTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSD2012YYDTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSD2012YYDTU reliable?

The price and inventory of KSD2012YYDTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSD2012YYDTU is usually 5 days.

3.What payment methods are accepted for KSD2012YYDTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSD2012YYDTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSD2012YYDTU?

KSD2012YYDTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSD2012YYDTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSD2012YYDTU?

For technical support, including KSD2012YYDTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSD2012YYDTU requirements.

6.How does Aetrix verify that KSD2012YYDTU is sourced from the original manufacturer or authorized distributors?

All KSD2012YYDTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSD2012YYDTU meets industry standards.

7.What is the process for return or replacement of KSD2012YYDTU?

All KSD2012YYDTU units undergo pre-shipment inspection (PSI). If there is an issue with KSD2012YYDTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSD2012YYDTU part is unused and in its original packaging.

Return procedure for KSD2012YYDTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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