Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSD363OTU

Part No.:
KSD363OTU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
AetrixKSD363OTU.pdf
Description:
TRANS NPN 120V 6A TO-220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,775

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSD363OTU from ON Semiconductor is an NPN epitaxial silicon transistor designed for horizontal deflection output in black-and-white TV systems, featuring VCBO = 300 V, VCEO = 120 V, IC = 6 A, PC = 40 W at TC = 25°C, and fT = 10 MHz.

For engineers reviewing the KSD363OTU datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage switching capability (300 V CB), robust power handling (40 W), TO-220 package thermal performance, hFE classification range (40–240), and saturation voltage behavior under 1 A/0.1 A drive conditions.

Technical Context

The KSD363OTU operates as a high-voltage, medium-power NPN switching transistor optimized for horizontal deflection circuits where fast turn-on/turn-off and safe operating area (SOA) under pulsed peak current are critical. It supports collector-base breakdown up to 300 V and delivers 6 A continuous collector current with 1 V VCE(sat) at IC = 1 A, IB = 0.1 A.

Its DC current gain (hFE) is classified into R/O/Y bins (40–80 / 70–140 / 120–240), enabling design margining for gain variation across temperature and production lots. The device uses epitaxial base construction and is rated for TJ = 150°C maximum junction temperature with TO-220 mechanical mounting compatibility.

Key Specifications

ParameterValue and Actual Design Meaning
VCBO300 V - Enables safe operation in B/W TV horizontal flyback circuits with high back-EMF spikes.
VCEO120 V - Sustains collector-emitter voltage during active switching without avalanche conduction.
IC (continuous)6 A - Supports high peak-to-average current ratios typical in deflection yoke drive applications.
PC (TC=25°C)40 W - Requires heatsinking for sustained operation; derates linearly above 25°C case temperature.
hFE (R-class min)40 - Ensures minimum base drive current of ~25 mA required for 1 A collector current in worst-case bin.
VCE(sat)1 V @ IC=1A, IB=0.1A - Limits conduction loss to ≤1 W per pulse, critical for thermal management in repetitive switching.
fT10 MHz - Supports adequate gain at horizontal scan frequencies (~15.625 kHz) with margin for transient response.

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Mounting surface is electrically connected to collector; requires insulating washer when mounted to grounded heatsink.

Pin/TerminalCircuit RoleDesign Meaning
1 (Left)BaseCurrent-controlled input node; requires ≥25 mA drive for full saturation under R-bin conditions.
2 (Center)CollectorMain power output terminal; electrically tied to metal tab; must be isolated from chassis if heatsink is grounded.
3 (Right)EmitterCommon return path; low-inductance connection essential to minimize switching overshoot in deflection circuits.

Key Features

FeatureDesign Value
High VCBO rating300 V enables reliable operation in CRT horizontal deflection circuits with large inductive kickback.
TO-220 power packageProvides proven thermal interface for forced-air or passive heatsinking in consumer TV chassis layouts.
hFE classification binsR/O/Y groupings allow bin-specific base drive optimization and yield-based BOM cost control.
Low VCE(sat)1 V saturation voltage minimizes conduction loss and localized heating during high-duty-cycle scanning.

Applications

B/W TV Horizontal Deflection OutputMonitor Flyback Power Switch

Use Scenario: Driving horizontal deflection yoke in analog black-and-white television receivers requiring precise timing and high-voltage retrace pulses.

IC Role / Device Role / Timing Role: Main switching transistor in line-output stage, turning on/off yoke current at 15.625 kHz with controlled rise/fall times.

Use Value: 300 V VCBO withstands flyback voltage spikes exceeding 250 V; 40 W dissipation accommodates pulsed power demands without thermal runaway.

Use Scenario: High-voltage switch in compact CRT monitor flyback transformers delivering regulated HV for screen acceleration.

IC Role / Device Role / Timing Role: Primary-side power switch synchronized to horizontal sync signal, operating in quasi-resonant or fixed-frequency mode.

Use Value: 120 V VCEO ensures safe blocking during off-state; TO-220 package allows direct bolt-down to aluminum chassis for thermal stability.

Industrial CRT Display DriverOscilloscope Sweep Amplifier Stage

Use Scenario: Line-scan driver in ruggedized industrial CRT displays exposed to wide ambient temperature ranges and vibration.

IC Role / Device Role / Timing Role: High-current, high-voltage output stage amplifying sawtooth sweep waveform into deflection coil.

Use Value: 150°C max junction temperature and -55°C to +150°C storage range support extended field reliability in uncontrolled environments.

Use Scenario: Fast-switching amplifier in analog oscilloscope timebase circuits requiring linear sweep and minimal distortion.

IC Role / Device Role / Timing Role: Current-source driver for electrostatic deflection plates, operating in Class-A/AB with tight gain stability.

Use Value: 10 MHz fT provides sufficient bandwidth for sub-microsecond sweep transitions; hFE consistency reduces calibration drift over time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD363T4GSame die, TO-252 (DPAK) package; lower PC = 25 W; no insulated tab.Suitable only for lower-power or surface-mount designs; not drop-in for TO-220 heatsink mounting.Select MJD363T4G only when board space constraints preclude TO-220 and thermal load remains ≤25 W.
KSC2690YTAHigher VCEO = 160 V but lower IC = 3 A; hFE binning differs (120–240 only); same TO-220 package.Better for higher-voltage, lower-current flyback stages; unsuitable for 6 A peak yoke drive.Choose KSC2690YTA when circuit demands >120 V blocking but peak current stays below 3 A and SOA margins are verified.

Compared with KSD363OTU, MJD363T4G trades thermal capacity and mounting flexibility for SMT compatibility, while KSC2690YTA increases voltage headroom at the expense of current capability-neither is pin-compatible, and both require layout and thermal redesign.

Availability

KSD363OTU is available at Aetrix Electronics and suitable for B/W TV repair, CRT monitor manufacturing, and industrial display refurbishment requiring stable component supply and long-lifecycle availability.

Supply support for KSD363OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor supplier specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and consumer markets.

The KSD363OTU belongs to ON Semiconductor's legacy high-voltage bipolar transistor product line, originally developed for CRT-based video display systems requiring rugged, high-energy switching performance.

FAQ

What is the maximum collector current rating for KSD363OTU?

The KSD363OTU has a continuous collector current rating of 6 A at TC = 25°C. This rating assumes proper heatsinking; actual usable current decreases with rising case temperature due to its 40 W power dissipation limit and linear derating curve shown in the datasheet's Figure 6. For pulsed operation, peak current may exceed 6 A within the Safe Operating Area boundaries defined in Figure 5.

Is KSD363OTU pin-compatible with other TO-220 NPN transistors like 2N3055?

No, KSD363OTU is not pin-compatible with 2N3055. While both use TO-220 packages, the KSD363OTU pinout is Base–Collector–Emitter (1–2–3), whereas 2N3055 is Base–Collector–Emitter in different physical order (1–2–3 corresponds to E–B–C on many 2N3055 variants). Always verify pin assignments using the official KSD363OTU datasheet before PCB layout or replacement.

Does KSD363OTU have an insulated tab?

Yes, the KSD363OTU TO-220 package features an electrically insulated metal tab connected to the collector terminal. This insulation allows direct mounting to a grounded heatsink without short-circuiting the collector, provided the insulating washer and mounting hardware are correctly applied per ON Semiconductor's mechanical recommendations.

What hFE classification does KSD363OTU carry, and how does it affect circuit design?

KSD363OTU is offered in R/O/Y hFE classifications (40–80 / 70–140 / 120–240). The classification determines minimum base drive requirements: R-bin units need ≥25 mA IB for 1 A IC, while Y-bin units may achieve the same with ≤8.3 mA. Designers must select base resistor values based on the purchased bin to ensure saturation across temperature and lifetime.

Can KSD363OTU be used in modern switch-mode power supplies?

KSD363OTU can be used in low-frequency (<50 kHz), high-voltage SMPS designs such as CRT flyback converters, but it is not optimized for high-frequency operation. Its 10 MHz fT and relatively slow switching characteristics (due to minority-carrier bipolar structure) make it less efficient than modern MOSFETs or RF BJTs above 100 kHz. For new designs, consider ON Semiconductor's newer power MOSFETs unless legacy compatibility or specific SOA behavior is required.

KSD363OTU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
6 A
Voltage - Collector Emitter Breakdown (Max):
120 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 100mA, 1A
Current - Collector Cutoff (Max):
1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 1A, 5V
Power - Max:
40 W
Frequency - Transition:
10MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

KSD363OTU FAQ

1.How can I place an order for KSD363OTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSD363OTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSD363OTU reliable?

The price and inventory of KSD363OTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSD363OTU is usually 5 days.

3.What payment methods are accepted for KSD363OTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSD363OTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSD363OTU?

KSD363OTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSD363OTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSD363OTU?

For technical support, including KSD363OTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSD363OTU requirements.

6.How does Aetrix verify that KSD363OTU is sourced from the original manufacturer or authorized distributors?

All KSD363OTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSD363OTU meets industry standards.

7.What is the process for return or replacement of KSD363OTU?

All KSD363OTU units undergo pre-shipment inspection (PSI). If there is an issue with KSD363OTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSD363OTU part is unused and in its original packaging.

Return procedure for KSD363OTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSD363OTU Tags

  • KSD363OTU
  • KSD363OTU PDF
  • KSD363OTU Datasheet
  • KSD363OTU Specifications
  • KSD363OTU Images
  • onsemi
  • onsemi KSD363OTU
  • Buy KSD363OTU
  • KSD363OTU Price
  • KSD363OTU Distributor
  • KSD363OTU Supplier
  • KSD363OTU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER