onsemi KSD526O
- Part No.:
- KSD526O
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
KSD526O.pdf
- Description:
- TRANS NPN 80V 4A TO-220-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,379
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Product details
Overview
KSD526O from onsemi is an NPN epitaxial silicon power transistor in TO-220-3LD package, rated for 80 V VCEO, 4 A IC, and 30 W PC at TC = 25°C, with hFE ranging 40–240 (class Y), used in linear power amplifier stages requiring high current gain and thermal robustness.
For engineers reviewing the KSD526O datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) compliance at pulse/DC conditions, VCE(sat) ≤ 1.5 V at IC = 3 A / IB = 0.3 A, and Pb-free TO-220-3LD mechanical compatibility with heatsink mounting.
Technical Context
This device operates as a medium-power NPN bipolar junction transistor optimized for Class AB linear amplification. Its design supports DC bias stability via hFE classification (Y: 120–240), low VBE(on) (1.0–1.5 V at IC = 3 A), and fT up to 8 MHz for audio-frequency signal handling.
The SOA curve defines operational limits across pulse width (1 ms to DC) and case temperature (25–150°C), while thermal derating begins at TC > 25°C with linear reduction to zero dissipation at 175°C - critical for heatsink sizing in continuous-duty amplifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum collector-emitter voltage before breakdown under open-base condition; sets rail voltage ceiling in amplifier output stage. |
| IC | 4 A - Continuous collector current rating; defines peak load drive capability in push-pull configurations. |
| PC @ TC=25°C | 30 W - Maximum power dissipation at case temperature 25°C; determines minimum heatsink thermal resistance required. |
| hFE (Y-class) | 120–240 - DC current gain range at VCE = 5 V, IC = 3 A; enables stable biasing with reduced base drive sensitivity. |
| VCE(sat) | 0.45–1.5 V @ IC = 3 A, IB = 0.3 A - Saturation voltage affecting conduction loss and thermal rise in switching or quasi-saturated operation. |
| fT | 3–8 MHz - Current gain-bandwidth product; supports full audio band (20 Hz–20 kHz) with margin for harmonic content. |
Pinout & Package
Package: TO-220-3LD (Case 340AT), through-hole, single-ended heatsink-mountable, with electrically isolated collector tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires external bias network to set Q-point in linear region. |
| 2 | Collector | Main high-current output terminal; electrically connected to metal tab for direct heatsink attachment and thermal path. |
| 3 | Emitter | Common reference node for emitter-follower or common-emitter topologies; grounded or tied to negative rail in amplifier outputs. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free construction | Complies with RoHS Directive 2011/65/EU; eliminates lead-based solder compatibility concerns in modern assembly lines. |
| Complementary pairing | Designed as NPN counterpart to KSB596 PNP transistor; enables matched push-pull output stages with symmetrical gain and SOA. |
| High hFE Y-class | 120–240 gain range reduces base drive current demand and improves efficiency in high-current linear amplifiers. |
| Robust SOA profile | Supports 10 A pulsed current at 10 ms with VCE ≤ 40 V; accommodates transient overloads without second breakdown. |
Applications
| Audio Power Amplifier | DC Motor Driver Stage |
|---|---|
Use Scenario: Final output stage in 20–50 W Class AB audio amplifier driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power switch in complementary emitter-follower configuration delivering high-fidelity analog current to load. Use Value: Low VCE(sat) minimizes distortion at high output currents; hFE consistency ensures predictable bias point across production units. | Use Scenario: High-side switch in H-bridge motor control for 24 V DC brushed motors drawing up to 3.5 A continuous. IC Role / Device Role / Timing Role: Linear current source regulating motor torque during PWM-enabled slow-decay commutation. Use Value: SOA-rated for 100 ms pulses allows safe stall-current handling; TO-220 tab enables direct heatsinking for thermal reliability. |
| Linear Voltage Regulator Pass Element | Industrial Sensor Excitation Circuit |
Use Scenario: Series pass transistor in adjustable 0–30 V, 3 A linear bench power supply. IC Role / Device Role / Timing Role: Voltage-controlled current source maintaining constant output despite load and line variations. Use Value: 80 V VCEO supports wide input-to-output differential; thermal shutdown margin extends safe operation under overload. | Use Scenario: Constant-current source for precision RTD or strain gauge bridge excitation in 4–20 mA loop transmitters. IC Role / Device Role / Timing Role: Stable current sink/source delivering 1–10 mA with <1% drift over temperature. Use Value: Tight hFE tolerance (Y-class) and low ICBO (<30 µA) ensure long-term current accuracy without active trimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | TO-263 (D²PAK), VCEO = 80 V, IC = 8 A, PD = 30 W, hFE = 1000–3000 (min) | Surface-mount variant with higher current rating but lower gain consistency; requires PCB thermal relief design. | Select for SMT production where board space is constrained and higher peak current is needed. |
| 2N3055G | TO-3, VCEO = 60 V, IC = 15 A, PD = 115 W, hFE = 20–100 (unbinned) | Larger metal-can package; lower voltage rating limits use in ≥60 V rails; wider hFE spread increases bias calibration effort. | Select for legacy designs requiring proven ruggedness at >60 W dissipation, accepting manual gain binning. |
Compared with MJD127G and 2N3055G, KSD526O offers optimal balance of through-hole manufacturability, tight hFE binning (Y-class), and SOA-defined pulse robustness - making it preferred for cost-sensitive, thermally managed audio and industrial linear amplifier designs.
Availability
KSD526O is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor driver stages, linear voltage regulator pass elements, and industrial sensor excitation circuits requiring stable component supply and Pb-free compliance.
Supply support for KSD526O includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering high-performance analog, logic, discrete, and power management solutions.
The KSD526O belongs to onsemi's general-purpose power bipolar transistor family, engineered for reliable linear amplification and switching in industrial, consumer audio, and power control applications.
FAQ
What is the maximum continuous collector current rating for KSD526O?
The KSD526O is rated for 4 A continuous collector current (IC) at case temperature TC = 25°C. Derating is required above this temperature per the power derating curve in Figure 6 of the datasheet, reaching zero dissipation at 175°C. Actual usable current depends on heatsink performance and ambient conditions.
Is KSD526O pin-compatible with KSB596?
No, KSD526O is not pin-compatible with KSB596. While they are complementary NPN/PNP devices intended for matched push-pull operation, KSD526O has Base–Collector–Emitter pinout (1–2–3), whereas KSB596 uses Emitter–Collector–Base (1–2–3) in the same TO-220-3LD package. Physical layout reversal must be accounted for in PCB design.
Does KSD526O meet RoHS requirements?
Yes, KSD526O is a Pb-free device compliant with the EU RoHS Directive 2011/65/EU. The "Y" suffix in ordering codes (e.g., KSD526Y) explicitly denotes Pb-free packaging, and the device uses lead-free terminations and internal construction verified per onsemi's qualification standards.
What is the typical VCE(sat) for KSD526O under standard test conditions?
The typical VCE(sat) for KSD526O is 0.7 V at IC = 3 A and IB = 0.3 A, with a maximum specified value of 1.5 V under those same conditions. This saturation voltage directly impacts conduction loss and thermal generation in linear or quasi-saturated operation modes.
Can KSD526O be used in switching applications?
KSD526O can be used in low-frequency switching applications (e.g., <100 kHz) where its fT of 3–8 MHz and SOA allow safe turn-on/turn-off transitions. However, it is primarily optimized for linear amplification; for high-efficiency, high-speed switching, MOSFETs or dedicated switching transistors are recommended instead of KSD526O.
KSD526O Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 300mA, 3A
- Current - Collector Cutoff (Max):
- 30µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 500mA, 5V
- Power - Max:
- 30 W
- Frequency - Transition:
- 8MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
KSD526O FAQ
1.How can I place an order for KSD526O through Aetrix?
Please submit a Request for Quotation (RFQ) for KSD526O on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSD526O reliable?
The price and inventory of KSD526O are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSD526O is usually 5 days.
3.What payment methods are accepted for KSD526O?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSD526O transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSD526O?
KSD526O orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSD526O order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSD526O?
For technical support, including KSD526O datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSD526O requirements.
6.How does Aetrix verify that KSD526O is sourced from the original manufacturer or authorized distributors?
All KSD526O products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSD526O meets industry standards.
7.What is the process for return or replacement of KSD526O?
All KSD526O units undergo pre-shipment inspection (PSI). If there is an issue with KSD526O, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSD526O part is unused and in its original packaging.
Return procedure for KSD526O:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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