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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSD526YTU

Name: KSD526YTU
Brand: onsemi
SKU: KSD526YTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSD526YTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: KSD526YTU.pdf

Description:: TRANS NPN 80V 4A TO-220-3

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Product details

Overview

KSD526YTU from onsemi is an NPN epitaxial silicon power transistor in TO-220-3LD package, rated for 80 V V_CEO, 4 A I_C, and 30 W P_C at T_C = 25°C, with h_FE of 40–240 (class Y), used in linear power amplifier stages requiring high-current gain and thermal robustness.

For engineers reviewing the KSD526YTU datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CB0 voltage rating, DC current gain classification (Y = 120–240), saturation voltage at 3 A/0.3 A drive, safe operating area limits, and TO-220 mechanical compatibility for heatsink mounting.

Technical Context

This device operates as a medium-power NPN bipolar junction transistor optimized for Class AB linear amplification and switching in industrial and audio power stages. Its design supports continuous collector current up to 4 A with guaranteed h_FE ≥120 at I_C = 3 A, V_CE = 5 V, and V_CE(sat) ≤1.5 V under same conditions.

The KSD526YTU features low output capacitance (C_cb = 90 pF at 10 V), f_T = 3–8 MHz, and thermal derating to zero power at 150°C junction temperature, enabling stable operation in thermally constrained enclosures with forced-air or heatsink cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum collector-emitter voltage before breakdown; defines safe headroom in 48 V rail amplifier designs.
I_C	4 A - Continuous collector current rating; supports output stages delivering ≥20 W into 8 Ω loads.
P_C @ T_C=25°C	30 W - Thermal power limit at case temperature 25°C; requires heatsink for >5 W sustained dissipation.
h_FE (Y-class)	120–240 - Confirmed DC current gain range at I_C = 3 A, V_CE = 5 V; enables low-base-drive amplifier bias networks.
V_CE(sat)	0.45–1.5 V - Saturation voltage at I_C = 3 A, I_B = 0.3 A; determines conduction loss and thermal rise in switching use.
f_T	3–8 MHz - Current gain-bandwidth product; sets upper frequency limit for small-signal amplification stability.
C_cb	90 pF - Collector-base capacitance at 10 V; impacts high-frequency gain roll-off and Miller effect in amplifier feedback paths.

Pinout & Package

Package: TO-220-3LD (Case 340AT), through-hole, insulated tab, 3-terminal, Pb-free, with metal tab electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Current-controlled input terminal; requires 0.3 A base drive for full 3 A collector conduction.
2 (Center)	Collector	Main high-current output node; internally bonded to metal tab for direct heatsink thermal coupling.
3 (Right)	Emitter	Common reference terminal; connects to ground or negative rail in common-emitter configurations.

Key Features

Feature	Design Value
Complementary pair to KSB596	Enables matched push-pull output stages without cross-conduction risk when paired with PNP counterpart.
TO-220-3LD mechanical outline	Standardized footprint and mounting hole spacing compatible with legacy PCB layouts and off-the-shelf heatsinks.
Y-class h_FE bin (120–240)	Guaranteed high current gain reduces base drive circuit complexity and improves thermal efficiency in Class AB biasing.
Pb-free construction	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-609A standard for lead-free terminal finish.

Applications

Audio Power Amplifier	DC Motor Driver Stage
Use Scenario: Final output stage in 20–30 W stereo audio amplifier driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power switch in complementary Class AB topology, delivering peak current >3 A during transients. Use Value: Low V_CE(sat) minimizes heat generation; Y-class h_FE ensures stable quiescent current control across temperature.	Use Scenario: H-bridge high-side or low-side switch controlling brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: Medium-power discrete switch handling bidirectional 2–4 A motor current with PWM duty cycling. Use Value: 80 V V_CEO provides margin above 36 V nominal bus; TO-220 tab-to-collector bond simplifies heatsinking.
Linear Voltage Regulator Pass Element	Power Supply Foldback Protection
Use Scenario: Series pass transistor in adjustable 0–30 V, 3 A linear bench power supply. IC Role / Device Role / Timing Role: High-gain current amplifier regulating output by modulating base voltage in response to error signal. Use Value: High h_FE reduces op-amp output loading; 30 W P_C supports 15 V × 2 A dissipation with adequate heatsink.	Use Scenario: Current-limiting element in overcurrent protection circuit triggering foldback at >3.5 A load. IC Role / Device Role / Timing Role: Fast-reacting current sensor and shunt switch activated by sense-resistor voltage drop. Use Value: Low V_BE(on) (1–1.5 V) enables precise 50 mV–100 mV threshold detection; fast f_T supports sub-microsecond response.

Audio Power Amplifier

DC Motor Driver Stage

Use Scenario: Final output stage in 20–30 W stereo audio amplifier driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN power switch in complementary Class AB topology, delivering peak current >3 A during transients.

Use Value: Low V_CE(sat) minimizes heat generation; Y-class h_FE ensures stable quiescent current control across temperature.

Use Scenario: H-bridge high-side or low-side switch controlling brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: Medium-power discrete switch handling bidirectional 2–4 A motor current with PWM duty cycling.

Use Value: 80 V V_CEO provides margin above 36 V nominal bus; TO-220 tab-to-collector bond simplifies heatsinking.

Linear Voltage Regulator Pass Element

Power Supply Foldback Protection

Use Scenario: Series pass transistor in adjustable 0–30 V, 3 A linear bench power supply.

IC Role / Device Role / Timing Role: High-gain current amplifier regulating output by modulating base voltage in response to error signal.

Use Value: High h_FE reduces op-amp output loading; 30 W P_C supports 15 V × 2 A dissipation with adequate heatsink.

Use Scenario: Current-limiting element in overcurrent protection circuit triggering foldback at >3.5 A load.

IC Role / Device Role / Timing Role: Fast-reacting current sensor and shunt switch activated by sense-resistor voltage drop.

Use Value: Low V_BE(on) (1–1.5 V) enables precise 50 mV–100 mV threshold detection; fast f_T supports sub-microsecond response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	Higher V_CEO (100 V), lower h_FE (20–80), TO-220AB package with non-insulated tab.	Suitable for higher-voltage 72 V bus systems but requires higher base drive due to lower gain.	Select when system voltage exceeds 80 V and thermal interface allows non-insulated tab mounting.
2N6292	Same V_CEO (80 V), lower I_C (3 A), lower P_C (25 W), TO-218 package with larger thermal resistance.	Acceptable for <20 W amplifiers where board space permits larger footprint and reduced thermal performance is tolerable.	Choose only if legacy design uses TO-218 footprint and power demand stays below 18 W continuous.

Compared with MJD127G and 2N6292, the KSD526YTU delivers superior current gain consistency (Y-bin), lower saturation voltage at 3 A, and optimized thermal path via insulated TO-220-3LD tab-making it preferred for compact, thermally sensitive 20–30 W linear amplifier and motor driver implementations.

Availability

KSD526YTU is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, linear voltage regulators, and overcurrent protection circuits requiring stable component supply and RoHS-compliant packaging.

Supply support for KSD526YTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, and cloud infrastructure markets.

The KSD526YTU belongs to onsemi's discrete bipolar power transistor product line, engineered for high-fidelity audio amplification, industrial motor control, and reliable linear regulation in thermally demanding environments.

FAQ

What is the pin configuration of the KSD526YTU?

The KSD526YTU uses a TO-220-3LD package with pin 1 = Base, pin 2 = Collector (connected to metal tab), and pin 3 = Emitter. This configuration is confirmed in the official onsemi datasheet (KSD526/D, Rev. 3, May 2024) and matches the marking diagram on page 1. The insulated tab design allows direct heatsink mounting without electrical isolation hardware.

Is the KSD526YTU RoHS compliant?

Yes, the KSD526YTU is explicitly marked as Pb-free in the onsemi datasheet (KSD526/D, Rev. 3, May 2024) and meets RoHS Directive 2011/65/EU requirements. The "Y" suffix in KSD526YTU denotes Pb-free packaging, and the device carries the required RoHS marking per JEDEC J-STD-609A standards.

What does the "Y" in KSD526YTU signify?

The "Y" in KSD526YTU indicates the h_FE gain classification bin per onsemi's datasheet: Y-class devices have DC current gain ranging from 120 to 240 at I_C = 3 A and V_CE = 5 V. This binning ensures predictable base drive requirements and thermal behavior in production amplifier designs using the KSD526YTU.

Can the KSD526YTU replace the KSD526Y in a design?

Yes, the KSD526YTU is functionally identical to KSD526Y except for packaging: both share identical electrical specifications, h_FE bin (Y), and TO-220-3LD package. The "TU" suffix denotes tube packaging (1000 units/tube), whereas "Y" alone indicates bulk bag (1200 units/bag); no electrical or mechanical differences exist between KSD526YTU and KSD526Y.

What is the maximum safe operating area (SOA) for the KSD526YTU?

The KSD526YTU SOA is defined in Figure 5 of the onsemi datasheet (KSD526/D, Rev. 3): at T_C = 25°C, it supports 3 A continuous at 25 V, 1 A at 60 V, and pulse limits up to 10 A for 1 ms. Derating begins above 25°C case temperature, reaching zero power at 150°C junction temperature-requiring heatsink design per Figure 6.

KSD526YTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 300mA, 3A

Current - Collector Cutoff (Max):: 30µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 500mA, 5V

Power - Max:: 30 W

Frequency - Transition:: 8MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

KSD526YTU FAQ

1.How can I place an order for KSD526YTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSD526YTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSD526YTU reliable?

The price and inventory of KSD526YTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSD526YTU is usually 5 days.

3.What payment methods are accepted for KSD526YTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSD526YTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSD526YTU?

KSD526YTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSD526YTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSD526YTU?

For technical support, including KSD526YTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSD526YTU requirements.

6.How does Aetrix verify that KSD526YTU is sourced from the original manufacturer or authorized distributors?

All KSD526YTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSD526YTU meets industry standards.

7.What is the process for return or replacement of KSD526YTU?

All KSD526YTU units undergo pre-shipment inspection (PSI). If there is an issue with KSD526YTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSD526YTU part is unused and in its original packaging.

Return procedure for KSD526YTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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