Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSD560R

Name: KSD560R
Brand: onsemi
SKU: KSD560R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: KSD560R

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: KSD560R.pdf

Description:: TRANS NPN DARL 100V 5A TO-220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,647

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

KSD560R from ON Semiconductor is an NPN epitaxial silicon Darlington transistor designed for low-speed switching and low-frequency power amplification in industrial applications. It features a 100 V V_CEO, 5 A DC collector current, 30 W collector dissipation at T_C = 25°C, and h_FE classification R (2000–5000 at I_C = 3 A). It is commonly used in relay drivers, motor controls, and solid-state power relays.

For engineers reviewing the KSD560R datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-220 package thermal performance, guaranteed h_FE range, V_CE(sat) ≤ 1.5 V at I_C = 3 A / I_B = 3 mA, and safe operating area suitability for intermittent high-current loads.

Technical Context

The KSD560R implements a monolithic Darlington pair structure with integrated base-emitter resistor network optimized for industrial switching. Its design emphasizes robustness under inductive load conditions, with 150°C maximum junction temperature and 100 ms pulse capability per safe operating area curves.

It operates as a single-stage high-gain current amplifier requiring minimal base drive-3 mA base current suffices to saturate 3 A collector current. The device is not intended for RF or high-frequency switching; typical turn-on time is 1 µs and fall time is 1.2 µs under specified test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Maximum continuous collector-emitter voltage before breakdown; defines usable supply rail headroom in switching applications.
I_C (DC)	5 A - Rated steady-state collector current; determines maximum continuous load current handling without forced cooling.
P_C (T_C=25°C)	30 W - Maximum power dissipation at case temperature 25°C; sets thermal design baseline for heatsink sizing.
h_FE (R-class)	2000–5000 - Guaranteed DC current gain range at V_CE = 2 V, I_C = 3 A; ensures predictable base drive requirements.
V_CE(sat)	≤1.5 V - Collector-emitter saturation voltage at I_C = 3 A, I_B = 3 mA; directly impacts conduction loss and self-heating.
T_J max	150°C - Absolute maximum junction temperature; constrains thermal margin in sealed or high-ambient environments.

Pinout & Package

Supplied in a through-hole TO-220 package with standard 3-lead configuration and integral metal tab for mechanical mounting and thermal conduction. Pin 1 is Base, Pin 2 is Collector (tab-connected), Pin 3 is Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives low-current drive signal; 3 mA sufficient for full saturation at 3 A load.
2 (Collector)	High-current output node	Internally connected to metal tab; must be electrically isolated from heatsink unless common-collector configuration is used.
3 (Emitter)	Current return path	Serves as reference terminal for load; polarity defines NPN operation in common-emitter topology.

Key Features

Feature	Design Value
Monolithic Darlington architecture	Integrates driver and output transistors on one die, eliminating external biasing components and improving reliability over discrete pairs.
Guaranteed h_FE classification (R)	2000–5000 gain range ensures consistent base drive design across production lots without trimming.
TO-220 thermal interface	Metal tab enables direct mounting to heatsinks with thermal resistance as low as 1.5°C/W (junction-to-case) when properly mounted.
Industrial-grade SOA	Supports 100 V × 3 A operation for 10 ms pulses, enabling robust driving of inductive solenoids and contactor coils.

Applications

Relay Driver Circuit	DC Motor Speed Control
Use Scenario: Driving 24 V/1 A electromagnetic relay coil in PLC output modules. IC Role / Device Role / Timing Role: High-gain switch that converts microcontroller GPIO logic-level signal into full coil actuation current. Use Value: Eliminates need for external base resistors or driver stages; V_CE(sat) ≤ 1.5 V minimizes coil voltage drop and ensures reliable pull-in.	Use Scenario: Controlling 12 V brushed DC motor in industrial conveyor system. IC Role / Device Role / Timing Role: Low-frequency PWM switch in common-emitter configuration, handling up to 3 A average current. Use Value: h_FE ≥ 2000 allows direct MCU GPIO drive; TO-220 package supports heatsinking for sustained 2 A operation.
Solid-State Power Relay	Linear Power Amplifier Stage
Use Scenario: Replacing electromechanical relays in HVAC control panels for fan and damper actuation. IC Role / Device Role / Timing Role: Main power switching element in zero-crossing–free AC load control using DC-coupled gate drive. Use Value: 100 V V_CEO and 5 A I_C support 120 VAC resistive loads up to 600 W with appropriate snubbing.	Use Scenario: Output stage in audio-frequency linear amplifier for sensor excitation or analog signal conditioning. IC Role / Device Role / Timing Role: Class-A or class-AB emitter-follower configured for low-output-impedance current sourcing. Use Value: Low V_BE(sat) (1.6–2.0 V) and stable h_FE enable precise current mirroring and minimal quiescent error.

Relay Driver Circuit

DC Motor Speed Control

Use Scenario: Driving 24 V/1 A electromagnetic relay coil in PLC output modules.

IC Role / Device Role / Timing Role: High-gain switch that converts microcontroller GPIO logic-level signal into full coil actuation current.

Use Value: Eliminates need for external base resistors or driver stages; V_CE(sat) ≤ 1.5 V minimizes coil voltage drop and ensures reliable pull-in.

Use Scenario: Controlling 12 V brushed DC motor in industrial conveyor system.

IC Role / Device Role / Timing Role: Low-frequency PWM switch in common-emitter configuration, handling up to 3 A average current.

Use Value: h_FE ≥ 2000 allows direct MCU GPIO drive; TO-220 package supports heatsinking for sustained 2 A operation.

Solid-State Power Relay

Linear Power Amplifier Stage

Use Scenario: Replacing electromechanical relays in HVAC control panels for fan and damper actuation.

IC Role / Device Role / Timing Role: Main power switching element in zero-crossing–free AC load control using DC-coupled gate drive.

Use Value: 100 V V_CEO and 5 A I_C support 120 VAC resistive loads up to 600 W with appropriate snubbing.

Use Scenario: Output stage in audio-frequency linear amplifier for sensor excitation or analog signal conditioning.

IC Role / Device Role / Timing Role: Class-A or class-AB emitter-follower configured for low-output-impedance current sourcing.

Use Value: Low V_BE(sat) (1.6–2.0 V) and stable h_FE enable precise current mirroring and minimal quiescent error.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BD679A	Lower V_CEO (80 V), higher h_FE (750–2000), TO-126 package	Limited to ≤80 V supply rails; less thermal mass than TO-220; unsuitable for 100 V industrial bus systems.	Select BD679A only if board space is constrained and voltage stress remains below 70 V.
KSD560	Same die and specs; differs only in h_FE classification (unspecified vs. R-grade binning)	No functional difference in circuit behavior; KSD560R guarantees tighter h_FE spread for production consistency.	KSD560R preferred for volume manufacturing where base drive predictability is critical.

Compared with BD679A and KSD560, the KSD560R offers verified R-bin h_FE consistency and full 100 V blocking capability in a thermally robust TO-220 package-making it optimal for industrial relay and motor control where parameter stability and thermal margin are prioritized over footprint size.

Availability

KSD560R is available at Aetrix Electronics and suitable for industrial automation, power relay modules, and low-frequency amplifier circuits requiring stable component supply, long-term lifecycle support, and guaranteed parametric binning.

Supply support for KSD560R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSD560R belongs to ON Semiconductor's legacy Fairchild bipolar power transistor product line, engineered specifically for ruggedized industrial switching and linear amplification where high DC gain and thermal resilience are essential.

FAQ

What is the pin configuration of the KSD560R?

The KSD560R uses a standard TO-220 package with three terminals: Pin 1 is Base, Pin 2 is Collector (connected to the metal tab), and Pin 3 is Emitter. This configuration is fixed and documented in the official ON Semiconductor datasheet revision A. When mounting the KSD560R, ensure electrical isolation between the tab and heatsink unless the collector is at ground potential. Always verify orientation using the datasheet mechanical drawing before PCB layout.

Does the KSD560R have built-in protection features?

The KSD560R does not integrate any built-in protection features such as thermal shutdown, overcurrent limiting, or ESD clamping. It is a bare-die Darlington transistor requiring external design safeguards-including base current limiting, collector snubbers for inductive loads, and heatsinking for sustained current operation. Its safe operating area (SOA) curve must be consulted during design validation. The KSD560R relies entirely on external circuitry for reliability in real-world applications.

What is the guaranteed h_FE range for the KSD560R?

Per the ON Semiconductor datasheet, the KSD560R is binned to the "R" h_FE classification, guaranteeing a DC current gain of 2000–5000 when measured at V_CE = 2 V and I_C = 3 A. This is narrower and more tightly controlled than the ungraded KSD560, making the KSD560R suitable for designs requiring predictable base drive current across production volumes without calibration or trimming.

Can the KSD560R replace the KSB601 in complementary circuits?

Yes-the KSD560R is explicitly designated as the NPN complement to the PNP KSB601 in ON Semiconductor's documentation. Both share matching voltage ratings (V_CEO = 100 V), current capability (I_C = 5 A), and TO-220 packaging. However, note that the KSB601 has different h_FE grading and saturation characteristics; verify symmetry requirements in push-pull or H-bridge designs before substituting the KSD560R for the KSB601 in matched-pair configurations.

Is the KSD560R suitable for high-frequency switching applications?

No-the KSD560R is not designed for high-frequency switching. Its specified turn-on time is 1 µs and fall time is 1.2 µs under pulsed test conditions, and its f_T is not characterized. The device is optimized for low-speed industrial switching (≤10 kHz) and linear amplification. Using the KSD560R above 20 kHz risks excessive switching losses, thermal runaway, and premature failure due to inadequate charge removal from the Darlington base region.

KSD560R Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN - Darlington

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 3mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 2000 @ 3A, 2V

Power - Max:: 1.5 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

KSD560R FAQ

1.How can I place an order for KSD560R through Aetrix?

Please submit a Request for Quotation (RFQ) for KSD560R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSD560R reliable?

The price and inventory of KSD560R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSD560R is usually 5 days.

3.What payment methods are accepted for KSD560R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSD560R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSD560R?

KSD560R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSD560R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSD560R?

For technical support, including KSD560R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSD560R requirements.

6.How does Aetrix verify that KSD560R is sourced from the original manufacturer or authorized distributors?

All KSD560R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSD560R meets industry standards.

7.What is the process for return or replacement of KSD560R?

All KSD560R units undergo pre-shipment inspection (PSI). If there is an issue with KSD560R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSD560R part is unused and in its original packaging.

Return procedure for KSD560R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…