onsemi KSD880O

Overview

KSD880O from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-220 package, rated for 60 V V_CEO, 3 A I_C, and 30 W P_C at T_C = 25°C, with h_FE classification O (60–120), used in low-frequency power amplifier and switching applications such as audio output stages and relay drivers.

For engineers reviewing the KSD880O datasheet, pinout, applications, or equivalent options, key selection considerations include its 60 V breakdown rating, 3 A continuous collector current capability, TO-220 thermal performance, and complementary pairing with KSB834 for push-pull configurations.

Technical Context

The KSD880O operates as a medium-power, low-frequency bipolar junction transistor optimized for linear amplification and saturated switching. Its h_FE range of 60–120 at I_C = 0.5 A and V_CE = 5 V supports stable biasing in Class AB audio stages, while V_CE(sat) ≤ 1 V at I_C = 3 A and I_B = 0.3 A enables efficient on-state conduction.

Thermal design relies on its TO-220 package with case temperature derating to zero power at 150°C, and safe operating area (SOA) defined up to 1 ms pulse width. It is not rated for RF or high-speed switching-f_T is only 3 MHz, confirming its low-frequency domain.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Dimensions per ON Semiconductor drawing: 15.90 mm × 10.08 mm × 18.95 mm max height, with 2.54 mm lead pitch and 3.60 mm mounting hole diameter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD122G and 2N3055, the KSD880O offers a balanced combination of through-hole TO-220 manufacturability, guaranteed h_FE class O consistency, and proven thermal performance in audio and industrial switching-making it optimal for new designs prioritizing ease of prototyping and production reliability.

Availability

KSD880O is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, and relay interface circuits requiring stable component supply and long-term industrial availability.

Supply support for KSD880O includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and cloud power applications.

The KSD880O belongs to ON Semiconductor's legacy power bipolar transistor family, designed specifically for cost-sensitive, medium-power linear and switching applications where reliability, thermal robustness, and gain consistency are critical.

FAQ

What is the h_FE range for KSD880O?

The KSD880O has h_FE classification O, meaning its DC current gain is guaranteed between 60 and 120 when measured at V_CE = 5 V and I_C = 0.5 A. This range is tighter than generic "2N" transistors and ensures predictable base drive requirements in production designs. The KSD880O specification sheet explicitly defines this classification in its Electrical Characteristics table.

Is KSD880O pin-compatible with KSD880?

Yes-the KSD880O is the h_FE-classified variant of the KSD880, sharing identical pinout (Base–Collector–Emitter), package (TO-220), absolute maximum ratings, and electrical characteristics except for the guaranteed h_FE range. No PCB or schematic changes are needed when substituting KSD880O for KSD880 in designs requiring verified gain consistency.

Does KSD880O have an isolated tab?

No-the standard KSD880O in TO-220 package has a non-isolated collector-connected tab. The collector (Pin 2) is electrically tied to the metal tab, which must be insulated from heatsinks if floating collector potential is required. ON Semiconductor does not list an insulated-tab variant for KSD880O in its official documentation.

What is the maximum safe operating temperature for KSD880O?

The KSD880O has a maximum junction temperature (T_J) of 150°C and storage temperature range of –55°C to +150°C. Its power dissipation must be derated linearly above T_C = 25°C, reaching zero at T_C = 150°C. Safe operation requires heatsinking sufficient to maintain case temperature below this limit under worst-case load conditions.

Can KSD880O replace 2N3055 in audio amplifier designs?

The KSD880O can serve as a modern, surface-mount-unfriendly but TO-220-compatible alternative to 2N3055 in low-to-mid power audio stages (<10 W), offering tighter h_FE control (60–120 vs. 20–100) and lower V_CE(sat) (≤1 V vs. ≤3 V). However, the 2N3055 handles higher peak currents and has different SOA boundaries-direct substitution requires verification of transient thermal stress and bias stability in the KSD880O.