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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSD880OPATU

Name: KSD880OPATU
Brand: onsemi
SKU: KSD880OPATU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSD880OPATU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: KSD880OPATU.pdf

Description:: TRANS NPN 60V 3A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSD880OPATU from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-220 package, rated for 60 V V_CEO, 3 A I_C, and 30 W P_C at T_C = 25°C, with h_FE of 60–120 (Class O) and V_CE(sat) ≤ 1 V at I_C = 3 A / I_B = 0.3 A, used in low-frequency power amplifier and switching applications such as linear power supply regulation and motor drive stages.

For engineers reviewing the KSD880OPATU datasheet, pinout, applications, or equivalent options, key selection considerations include its Class O h_FE range, TO-220 thermal performance, safe operating area (SOA) limits, and complementary pairing with KSB834 for push-pull configurations.

Technical Context

The KSD880OPATU operates as a medium-power NPN bipolar junction transistor optimized for low-frequency (<3 MHz f_T) linear amplification and switching. Its design emphasizes robust DC current gain stability across collector currents from 0.5 A to 3 A and low saturation voltage under high base drive (I_B = 0.3 A).

It features a single-die epitaxial construction with defined absolute maximum ratings: 60 V V_CBO/V_CEO, 7 V V_EBO, and 150°C T_J, supporting operation in thermally constrained industrial power stages where junction temperature management is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition; defines safe DC rail headroom in amplifier output stages.
I_C	3 A - Continuous collector current rating at T_C = 25°C; sets upper limit for sustained load current in linear regulators or driver circuits.
P_C	30 W - Maximum collector dissipation at case temperature 25°C; requires heatsinking for operation above ~50°C ambient.
h_FE (Class O)	60–120 - DC current gain range at V_CE = 5 V, I_C = 0.5 A; determines required base drive for predictable biasing in Class AB amplifiers.
V_CE(sat)	≤1 V - Collector-emitter saturation voltage at I_C = 3 A, I_B = 0.3 A; directly impacts conduction loss and thermal rise in switching applications.
f_T	3 MHz - Current gain bandwidth product at V_CE = 5 V, I_C = 0.5 A; confirms suitability for audio and low-speed control, not RF or fast digital switching.
C_ob	70 pF - Output capacitance at V_CB = 10 V; influences high-frequency roll-off and stability in feedback amplifier designs.

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab), with mechanical dimensions per ON Semiconductor drawing: 15.90 mm length, 10.08 mm width, 18.95 mm max height, 2.54 mm lead pitch, and 3.60 mm mounting hole diameter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives forward-biased current to enable conduction; requires ≥0.3 A peak drive for full saturation at 3 A collector load.
2 (Collector)	High-current output node	Connected to load or power rail; electrically tied to metal tab in standard TO-220 variant-requires isolation if mounted to heatsink.
3 (Emitter)	Reference/return path	Serves as common emitter node; carries full load current and must be routed with low-inductance, high-current trace or busbar.

Key Features

Feature	Design Value
Complementary pair designation	Explicitly listed as complement to KSB834 PNP device-enables matched push-pull amplifier design without gain or SOA mismatch.
Class O h_FE binning	Guaranteed 60–120 h_FE at I_C = 0.5 A-reduces need for individual bias trimming in production amplifier assemblies.
Low V_CE(sat) at high I_C	≤1 V at 3 A/0.3 A ensures <3 W conduction loss-critical for thermal management in compact linear power supplies.
Robust SOA rating	DC SOA curve validated up to 3 A/60 V with derating above 25°C-supports reliable operation in unregulated or transient-loaded industrial power stages.

Applications

Audio Power Amplifier Stage	Linear Voltage Regulator Pass Element
Use Scenario: Final output stage in 10–20 W Class AB audio amplifiers driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power transistor delivering amplified audio signal current with minimal crossover distortion. Use Value: Class O h_FE consistency and 3 MHz f_T ensure stable mid-band gain and low THD below 20 kHz without instability compensation.	Use Scenario: Series pass element in adjustable linear regulators supplying 1–3 A to microcontroller or analog subsystems. IC Role / Device Role / Timing Role: Continuously variable current source controlled by error amplifier feedback loop. Use Value: 30 W P_C rating and SOA-defined safe operating region allow stable regulation under load transients without thermal runaway.
DC Motor Drive (Low-Speed)	Relay/Solenoid Driver
Use Scenario: Unidirectional H-bridge half-bridge or single-ended switch controlling 12–24 V brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: High-current saturated switch turning motor winding on/off at PWM frequencies ≤10 kHz. Use Value: V_CE(sat) ≤1 V minimizes I²R losses during conduction, reducing heat generation in enclosed motor control enclosures.	Use Scenario: Driving 12–24 V DC relays or solenoids requiring 0.5–2.5 A coil current in PLC I/O modules or HVAC controllers. IC Role / Device Role / Timing Role: Low-side switch interfacing microcontroller GPIO to inductive load. Use Value: 60 V V_CEO safely clamps inductive kickback spikes; built-in Cob capacitance aids snubber-free turn-off in low-frequency switching.

Audio Power Amplifier Stage

Linear Voltage Regulator Pass Element

Use Scenario: Final output stage in 10–20 W Class AB audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN power transistor delivering amplified audio signal current with minimal crossover distortion.

Use Value: Class O h_FE consistency and 3 MHz f_T ensure stable mid-band gain and low THD below 20 kHz without instability compensation.

Use Scenario: Series pass element in adjustable linear regulators supplying 1–3 A to microcontroller or analog subsystems.

IC Role / Device Role / Timing Role: Continuously variable current source controlled by error amplifier feedback loop.

Use Value: 30 W P_C rating and SOA-defined safe operating region allow stable regulation under load transients without thermal runaway.

DC Motor Drive (Low-Speed)

Relay/Solenoid Driver

Use Scenario: Unidirectional H-bridge half-bridge or single-ended switch controlling 12–24 V brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: High-current saturated switch turning motor winding on/off at PWM frequencies ≤10 kHz.

Use Value: V_CE(sat) ≤1 V minimizes I²R losses during conduction, reducing heat generation in enclosed motor control enclosures.

Use Scenario: Driving 12–24 V DC relays or solenoids requiring 0.5–2.5 A coil current in PLC I/O modules or HVAC controllers.

IC Role / Device Role / Timing Role: Low-side switch interfacing microcontroller GPIO to inductive load.

Use Value: 60 V V_CEO safely clamps inductive kickback spikes; built-in Cob capacitance aids snubber-free turn-off in low-frequency switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD880G	Different h_FE bin (100–300); same V_CEO/I_C/P_C; TO-263 (D²PAK) package with lower thermal resistance but surface-mount only.	Not pin-compatible; requires PCB redesign; better suited for automated SMT assembly and higher power density layouts.	Select MJD880G when thermal performance and board space are prioritized over through-hole compatibility.
2SC5200	Higher V_CEO (230 V), higher f_T (≥30 MHz), wider h_FE range (80–240); TO-3P package with superior heatsinking but larger footprint.	Over-specified for 60 V applications; used in high-fidelity audio amplifiers where extended frequency response and ruggedness are mandatory.	Select 2SC5200 only when system-level requirements demand >100 V headroom or >10 MHz bandwidth.

Compared with MJD880G and 2SC5200, the KSD880OPATU provides optimal balance of cost, thermal interface simplicity (TO-220), and verified performance in 60 V, ≤3 A linear and switching roles-making it ideal for cost-sensitive industrial controls where through-hole assembly and proven reliability are required.

Availability

KSD880OPATU is available at Aetrix Electronics and suitable for linear power supply regulation, audio amplifier output stages, and DC motor drive circuits requiring stable component supply and long-term industrial availability.

Supply support for KSD880OPATU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

The KSD880OPATU belongs to ON Semiconductor's legacy power bipolar transistor family, designed specifically for robust, low-frequency power amplification and switching in cost-sensitive industrial and consumer equipment.

FAQ

What is the h_FE range for KSD880OPATU?

The KSD880OPATU is binned as Class O, with guaranteed DC current gain (h_FE) between 60 and 120 when measured at V_CE = 5 V and I_C = 0.5 A. This range is documented in the official ON Semiconductor datasheet and enables consistent bias design without per-unit calibration. The KSD880OPATU does not guarantee h_FE outside this bin, and values at higher collector currents (e.g., 3 A) may fall toward the lower end of the range.

Is KSD880OPATU pin-compatible with KSB834?

No, the KSD880OPATU (NPN) and KSB834 (PNP) are complementary devices-not pin-compatible. They share identical TO-220 package outlines and terminal numbering (1=Base, 2=Collector, 3=Emitter), but polarity reversal means direct substitution would cause circuit failure. The KSD880OPATU is intended for use alongside KSB834 in push-pull configurations where matched thermal and gain characteristics are required.

What is the maximum junction temperature for KSD880OPATU?

The KSD880OPATU has a maximum rated junction temperature (T_J) of 150°C, as specified in its Absolute Maximum Ratings table. Operation beyond this temperature risks permanent degradation of the epitaxial structure and parametric shift. Derating of power dissipation begins at T_C = 25°C per the published power derating curve, and thermal design must ensure the KSD880OPATU's actual T_J remains within this limit under worst-case load and ambient conditions.

Does KSD880OPATU support switching applications?

Yes, the KSD880OPATU supports low-frequency switching applications, with documented t_ON = 0.8 µs, t_STG = 1.5 µs, and t_F = 0.8 µs at V_CC = 30 V, I_C = 1 A, and R_L = 30 Ω. These values confirm usability in PWM-driven motor control or relay drivers up to ~10 kHz. However, its 3 MHz f_T and relatively high Cob (70 pF) limit effectiveness in high-speed or RF switching; the KSD880OPATU is not recommended for >50 kHz switching.

What is the safe operating area (SOA) limitation for KSD880OPATU at 100°C case temperature?

At T_C = 100°C, the KSD880OPATU's continuous DC SOA is limited to approximately 1.5 A at 60 V, per the published SOA graph. This reflects linear derating from 3 A at 25°C, governed by the 30 W P_C rating and thermal resistance. Pulse SOA extends further (e.g., 3 A at 60 V for 1 ms), but designers must verify that both voltage and current remain within the bounded SOA envelope during all operating modes-including startup surges and fault conditions-to prevent second breakdown in the KSD880OPATU.

KSD880OPATU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 300mA, 3A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 500mA, 5V

Power - Max:: 30 W

Frequency - Transition:: 3MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

KSD880OPATU FAQ

1.How can I place an order for KSD880OPATU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSD880OPATU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSD880OPATU reliable?

The price and inventory of KSD880OPATU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSD880OPATU is usually 5 days.

3.What payment methods are accepted for KSD880OPATU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSD880OPATU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSD880OPATU?

KSD880OPATU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSD880OPATU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSD880OPATU?

For technical support, including KSD880OPATU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSD880OPATU requirements.

6.How does Aetrix verify that KSD880OPATU is sourced from the original manufacturer or authorized distributors?

All KSD880OPATU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSD880OPATU meets industry standards.

7.What is the process for return or replacement of KSD880OPATU?

All KSD880OPATU units undergo pre-shipment inspection (PSI). If there is an issue with KSD880OPATU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSD880OPATU part is unused and in its original packaging.

Return procedure for KSD880OPATU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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