onsemi KSD880YTU

Overview

KSD880YTU from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-220 package, rated for 60 V V_CEO, 3 A I_C, and 30 W P_C at T_C = 25°C, with h_FE of 100–200 (Y-class), used in low-frequency power amplifier and switching applications such as linear power supplies and motor drivers.

For engineers reviewing the KSD880YTU datasheet, pinout, applications, or equivalent options, key selection criteria include verified DC current gain classification (Y), collector-emitter saturation voltage under 1 V at 3 A/0.3 A drive, safe operating area compliance up to 30 W, and TO-220 mechanical compatibility with standard heatsink mounting.

Technical Context

The KSD880YTU operates as a medium-power bipolar junction transistor optimized for linear amplification and hard-switching duty in non-RF circuits. Its design emphasizes high DC current gain stability across 0.5–3 A collector current range and low V_CE(sat) to minimize conduction loss in Class AB amplifier output stages.

It features complementary pairing with KSB834 (PNP), enabling push-pull configurations without external bias network redesign. Thermal performance is defined by 150°C maximum junction temperature and derated power dissipation above 25°C case temperature per the published derating curve.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab), with mechanical dimensions conforming to JEDEC TO-220AB standard: 15.90 mm length, 10.08 mm width, 4.50 mm thickness, 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD880G and 2SC5200, the KSD880YTU delivers optimal balance of thermal capability (30 W), standardized TO-220 form factor, and guaranteed Y-class h_FE for predictable linear amplifier design-making it the preferred choice for mid-power discrete amplifier and regulator output stages.

Availability

KSD880YTU is available at Aetrix Electronics and suitable for audio power amplifiers, linear voltage regulators, and DC motor drivers requiring stable component supply, consistent parametric binning, and long-term industrial availability.

Supply support for KSD880YTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor components focused on automotive, industrial, cloud, and IoT applications.

The KSD880YTU belongs to ON Semiconductor's legacy discrete power transistor portfolio, designed specifically for cost-sensitive, medium-power linear and switching applications where reliability, thermal robustness, and mechanical standardization are prioritized over ultra-high speed or integration.

FAQ

What is the hFE classification for KSD880YTU?

The KSD880YTU is Y-class binned, meaning its DC current gain (h_FE) is guaranteed between 100 and 200 when measured at V_CE = 5 V and I_C = 0.5 A. This classification is explicitly stated in the official ON Semiconductor datasheet for KSD880YTU and distinguishes it from O-class (60–120) and G-class (150–300) variants within the same family.

Is KSD880YTU pin-compatible with KSD880?

Yes, KSD880YTU is functionally and mechanically identical to KSD880, differing only in the Y-class h_FE binning designation. Both share the same TO-220 package outline, pinout (Base–Collector–Emitter), absolute maximum ratings, and electrical characteristics-making KSD880YTU a direct replacement where Y-class gain consistency is required.

Does KSD880YTU require a heatsink in normal operation?

Yes, KSD880YTU requires a heatsink whenever dissipating more than ~2–3 W continuously. Its 30 W P_C rating applies only at T_C = 25°C; thermal resistance from junction-to-case is ~0.83°C/W, so even at 10 W dissipation, junction temperature exceeds 100°C without heatsinking. A minimum 2.5°C/W heatsink is recommended for full 3 A operation.

What is the safe operating area (SOA) limit for KSD880YTU at 100°C case temperature?

At T_C = 100°C, the KSD880YTU's SOA is derated to approximately 12 W continuous power dissipation, based on the linear derating curve in the official datasheet (30 W at 25°C, zero at 150°C). Pulse operation extends this limit-e.g., 100 ms pulses allow up to ~25 A at 10 V V_CE, per the published SOA graph.

Can KSD880YTU be used in place of KSB834 in a circuit?

No, KSD880YTU cannot replace KSB834 because they are complementary types: KSD880YTU is NPN, while KSB834 is PNP. Swapping them would reverse polarity and prevent proper biasing. However, KSD880YTU is explicitly designed to pair with KSB834 in push-pull amplifier outputs, sharing matched V_CEO, I_C, and thermal characteristics for balanced performance.