onsemi KSD882YSTSSTU
- Part No.:
- KSD882YSTSSTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-225AA, TO-126-3
- Datasheet:
-
KSD882YSTSSTU.pdf
- Description:
- TRANS NPN 30V 3A TO-126-3
- Quantity:
- Payment:

- Shipping:

Inventory:2,012
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
KSD882YSTSSTU from onsemi is an NPN epitaxial silicon power transistor in TO-126-3LD package, rated for 30 V VCEO, 3 A DC collector current, and 10 W dissipation at TC = 25°C; it delivers hFE of 160–320 at IC = 1 A and is optimized for audio frequency power amplifier stages.
For engineers reviewing the KSD882YSTSSTU datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO/IC rating match, hFE grade Y (160–320), TO-126 mechanical compatibility, saturation voltage under 2 A drive, and complementary pairing with KSB772 for push-pull output stages.
Technical Context
This discrete NPN transistor operates in linear amplification and low-speed switching modes, with a current gain bandwidth product (fT) of 90 MHz and output capacitance (Cob) of 45 pF at 10 V VCB. Its safe operating area (SOA) supports pulsed IC up to 7 A (PW ≤ 10 ms, duty ≤ 50%) and DC operation up to 3 A with thermal derating above 25°C case temperature.
The device features graded hFE classification - Y-grade specifies hFE2 = 160–320 at VCE = 2 V, IC = 1 A - and exhibits VCE(sat) ≤ 0.5 V and VBE(sat) ≤ 2.0 V under IC = 2 A / IB = 0.2 A conditions, enabling efficient Class AB audio output stage design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum sustainable collector-emitter voltage before breakdown; defines rail voltage limit in amplifier output stages. |
| IC (DC) | 3 A - Continuous collector current capability; sets peak RMS output power handling in audio amplifiers. |
| hFE (Y-grade) | 160–320 - Confirmed DC current gain range at IC = 1 A; ensures predictable bias stability in emitter-follower or driver configurations. |
| VCE(sat) | ≤ 0.5 V @ IC = 2 A, IB = 0.2 A - Low saturation voltage minimizes conduction loss and heat generation in switching or saturated amplifier use. |
| fT | 90 MHz - Current gain-bandwidth product; supports stable operation up to mid-audio frequencies with margin for feedback loop stability. |
| Cob | 45 pF @ VCB = 10 V - Output junction capacitance; impacts high-frequency roll-off and Miller effect in common-emitter amplifier topologies. |
Pinout & Package
Package: TO-126-3LD (Case 340AS), Pb-free, through-hole mounting with integral heat sink tab. Pin 1 = Emitter, Pin 2 = Collector (tab-connected), Pin 3 = Base.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current exit path from transistor | Connected to ground or low-impedance return; requires low-inductance layout for audio fidelity. |
| 2 (Collector) | Current entry path; electrically tied to metal tab | Tab serves as primary thermal path and high-current node; must be mounted to heatsink with electrical isolation if needed. |
| 3 (Base) | Control terminal for minority carrier injection | Drives transistor into active/saturation; requires current-limited bias network to avoid overdrive beyond 0.6 A max. |
Key Features
| Feature | Design Value |
|---|---|
| Y-grade hFE binning | Guaranteed hFE = 160–320 at IC = 1 A, enabling consistent gain matching in dual-channel or push-pull amplifier designs. |
| Complementary pairing | Designed as direct NPN complement to KSB772 PNP transistor, supporting matched thermal and gain characteristics in Class AB output stages. |
| Low VCE(sat) | 0.3 V typical at IC = 2 A - reduces power loss and improves efficiency in linear amplifier operation. |
| TO-126 thermal performance | 10 W dissipation at TC = 25°C with defined derating curve - enables compact heatsink integration in consumer audio equipment. |
Applications
| Audio Power Amplifier | DC Motor Driver Stage |
|---|---|
Use Scenario: Final output stage in 5–20 W stereo audio amplifiers driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power switch/amplifier in complementary Class AB topology with KSB772. Use Value: Delivers low-distortion linear gain with VCE(sat) ≤ 0.5 V and hFE ≥ 160, minimizing crossover distortion and thermal drift. | Use Scenario: H-bridge low-side switch or single-ended driver for small brushed DC motors (≤ 24 V, ≤ 2 A). IC Role / Device Role / Timing Role: Discrete NPN switch controlling motor current flow to ground. Use Value: Supports 7 A pulsed current for motor startup surges while maintaining < 0.5 V saturation drop at 2 A continuous load. |
| Power Supply Pass Transistor | Linear Voltage Regulator Booster |
Use Scenario: Series pass element in adjustable linear regulators delivering up to 3 A output current. IC Role / Device Role / Timing Role: High-current series regulator transistor dissipating up to 10 W at TC = 25°C. Use Value: Enables stable regulation with minimal dropout due to low VCE(sat) and robust SOA covering transient overloads. | Use Scenario: Boosting current capability of IC-based regulators (e.g., LM317) in lab bench supplies or LED drivers. IC Role / Device Role / Timing Role: External pass transistor augmenting internal regulator's current limit. Use Value: Extends output current to 3 A while retaining IC's voltage reference accuracy and thermal foldback protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD882G | Different hFE grading (100–300); TO-252 surface-mount package vs. TO-126 through-hole; same VCEO/IC ratings. | Requires PCB rework for SMT assembly; unsuitable for legacy through-hole designs without adapter. | Select MJD882G only when migrating to surface-mount production and thermal management permits lower-case dissipation. |
| KSC2690Y | Higher VCEO = 60 V; same TO-126 package; hFE = 160–320 (Y-grade); fT = 100 MHz. | Better voltage headroom for 48 V systems; higher fT supports wider bandwidth but increases RF susceptibility risk. | Choose KSC2690Y where supply rails exceed 30 V or extended frequency response is required beyond audio band. |
Compared with MJD882G and KSC2690Y, KSD882YSTSSTU provides optimal fit for cost-sensitive, through-hole audio amplifier designs requiring guaranteed Y-grade hFE, proven thermal behavior in TO-126, and direct complementarity with KSB772 - without SMT conversion or over-spec'd voltage margins.
Availability
KSD882YSTSSTU is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor control circuits, and linear voltage regulator boosters requiring stable component supply, long-term industrial availability, and Pb-free compliance.
Supply support for KSD882YSTSSTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and discrete devices.
The KSD882 series belongs to onsemi's general-purpose bipolar power transistor family, engineered specifically for audio frequency amplification and low-speed switching in cost-sensitive industrial and consumer applications.
FAQ
What is the hFE range for KSD882YSTSSTU?
The KSD882YSTSSTU is Y-grade, meaning its DC current gain (hFE) is specified as 160–320 when measured at VCE = 2 V and IC = 1 A. This binning ensures consistent gain performance across units, critical for matched-pair amplifier designs. The KSD882YSTSSTU datasheet confirms this range in the hFE Classification table and Electrical Characteristics section.
Is KSD882YSTSSTU pin-compatible with KSB772?
No - KSD882YSTSSTU (NPN) and KSB772 (PNP) are complementary transistors, not pin-compatible. They share identical TO-126-3LD packaging and mechanical footprint, but pin assignments differ: KSD882YSTSSTU has Emitter-Collector-Base (1-2-3), while KSB772 uses Emitter-Collector-Base in reversed polarity (1-2-3 maps to E-C-B for NPN, but C-E-B for PNP). Circuit layout must account for polarity reversal.
What is the maximum pulsed collector current for KSD882YSTSSTU?
The KSD882YSTSSTU supports a maximum pulsed collector current (ICP) of 7 A, defined under conditions of pulse width ≤ 10 ms and duty cycle ≤ 50%. This rating enables reliable handling of short-duration overload events such as speaker pop suppression or motor stall currents. The KSD882YSTSSTU Absolute Maximum Ratings table explicitly lists this value.
Does KSD882YSTSSTU require a heatsink in standard operation?
Yes - the KSD882YSTSSTU dissipates up to 10 W at TC = 25°C, and its thermal resistance (RθJC) necessitates heatsinking for any sustained IC > ~1.5 A or ambient temperatures above 40°C. The Safe Operating Area curves and Power Derating graph in the KSD882YSTSSTU datasheet show rapid power reduction above 25°C case temperature, confirming mandatory heatsink use in power amplifier applications.
What does "YSTSSTU" mean in the KSD882YSTSSTU part number?
In KSD882YSTSSTU, "Y" denotes the hFE grade (160–320), "STS" indicates tape-and-reel packaging per EIA-481 standard, "TU" signifies Pb-free (RoHS-compliant) processing, and the full suffix confirms TO-126-3LD packaging. This full ordering code distinguishes it from bulk (KSD882YS) and other variants, ensuring correct procurement of the Y-grade, RoHS-compliant, tape-and-reel version of KSD882YSTSSTU.
KSD882YSTSSTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-225AA, TO-126-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 160 @ 1A, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 90MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-126-3
KSD882YSTSSTU FAQ
1.How can I place an order for KSD882YSTSSTU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSD882YSTSSTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSD882YSTSSTU reliable?
The price and inventory of KSD882YSTSSTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSD882YSTSSTU is usually 5 days.
3.What payment methods are accepted for KSD882YSTSSTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSD882YSTSSTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSD882YSTSSTU?
KSD882YSTSSTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSD882YSTSSTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSD882YSTSSTU?
For technical support, including KSD882YSTSSTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSD882YSTSSTU requirements.
6.How does Aetrix verify that KSD882YSTSSTU is sourced from the original manufacturer or authorized distributors?
All KSD882YSTSSTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSD882YSTSSTU meets industry standards.
7.What is the process for return or replacement of KSD882YSTSSTU?
All KSD882YSTSSTU units undergo pre-shipment inspection (PSI). If there is an issue with KSD882YSTSSTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSD882YSTSSTU part is unused and in its original packaging.
Return procedure for KSD882YSTSSTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
KSD882YSTSSTU Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

