onsemi KSE13003H1AS

Overview

KSE13003H1AS from ON Semiconductor is an NPN silicon power transistor designed for high-voltage switching regulator and motor control applications. It features a 400 V V_CEO, 1.5 A DC collector current, 20 W power dissipation at T_C = 25°C, h_FE of 9–16 (at V_CE = 2 V, I_C = 0.5 A), and TO-126 package with emitter-collector-base pinout.

For engineers reviewing the KSE13003H1AS datasheet, pinout, applications, or equivalent options, key selection considerations include its 400 V blocking capability, 1.5 A continuous current rating, 20 W thermal performance at case temperature, h_FE classification H1, and suitability for offline SMPS and universal motor drives where ruggedness and fast switching are required.

Technical Context

The KSE13003H1AS operates as a high-voltage, medium-current NPN bipolar junction transistor optimized for hard-switched power conversion. Its 700 V V_CBO and 400 V V_CEO support operation in 220–240 VAC line-fed topologies, while its 4 MHz f_T and sub-millisecond switching times (t_ON = 1.1 ms, t_F = 0.7 ms) enable use in 20–100 kHz switch-mode supplies.

It uses standard BJT base drive architecture requiring external current-limiting resistors and exhibits defined saturation behavior: V_CE(sat) ≤ 3 V at I_C = 1.5 A / I_B = 0.5 A, and V_BE(sat) ≤ 1.2 V under same conditions. Its Cob = 21 pF at V_CB = 10 V supports predictable turn-off energy calculation.

Key Specifications

Pinout & Package

Package: TO-126, through-hole, single-ended power plastic package with integral heat slug. Pin 1 = Emitter, Pin 2 = Collector (connected to tab), Pin 3 = Base.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with MJE13003G and ST13003, the KSE13003H1AS offers guaranteed h_FE binning (H1) for tighter base drive predictability and identical 20 W power rating - making it preferable for production-critical designs where gain stability and thermal headroom are prioritized.

Availability

KSE13003H1AS is available at Aetrix Electronics and suitable for switch-mode power supplies, universal motor controllers, and industrial relay drivers requiring stable component supply and long-term obsolescence planning.

Supply support for KSE13003H1AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSE13003H1AS belongs to ON Semiconductor's legacy high-voltage bipolar transistor product line, originally developed by Fairchild for rugged, cost-effective switching in offline power conversion and motor drive systems.

FAQ

What is the h_FE range specified for KSE13003H1AS?

The KSE13003H1AS has a guaranteed DC current gain (h_FE) range of 9 to 16 when measured at V_CE = 2 V and I_C = 0.5 A. This H1 classification ensures consistent base drive requirements across units, unlike unclassified variants such as MJE13003G. Designers should size base resistors to deliver ≥90 mA for reliable saturation at mid-range I_C, and verify operation across the full h_FE band in final validation of the KSE13003H1AS.

Is KSE13003H1AS still in active production?

No - the KSE13003H1AS is marked "DISCONTINUED" in its official datasheet, and ON Semiconductor states "THIS DEVICE IS NOT AVAILABLE." While limited legacy stock may exist, Aetrix Electronics provides lifecycle coordination and last-time-buy support for the KSE13003H1AS, including traceable sourcing and obsolescence mitigation planning for ongoing production programs.

What package type does KSE13003H1AS use, and how is the collector connected?

The KSE13003H1AS uses the TO-126 package, with Pin 1 = Emitter, Pin 2 = Collector, and Pin 3 = Base. Critically, the metal tab (case) is internally connected to the Collector terminal, meaning mechanical mounting to a heatsink creates an electrical connection to the collector node. Insulating hardware must be used if the heatsink is grounded or referenced to another potential, as confirmed in the official KSE13003H1AS package marking diagram and ordering information table.

Can KSE13003H1AS replace KSE13003H2AS or KSE13003H3AS in a design?

No - the KSE13003H1AS is not a drop-in replacement for KSE13003H2AS or KSE13003H3AS due to differing h_FE ranges: H1 = 9–16, H2 = 14–21, H3 = 19–26. Substituting across bins alters base drive current requirements and may cause incomplete saturation or excessive base dissipation. The KSE13003H1AS must be validated independently in any circuit originally designed for H2 or H3 variants, especially in current-sensitive or thermally constrained layouts.

What is the maximum safe operating area (SOA) limitation for KSE13003H1AS at 100°C case temperature?

Per the KSE13003H1AS datasheet Figure 5 (Safe Operating Area), at T_C = 100°C, the device's SOA is bounded by secondary breakdown at high V_CE/low I_C and thermal limits at high I_C/low V_CE. At 100°C, the maximum allowable I_C drops to approximately 0.8 A when V_CE = 200 V, and to ~1.2 A at V_CE = 100 V. Designers must consult the full SOA curve in the KSE13003H1AS datasheet and avoid pulse conditions violating these boundaries to prevent localized thermal runaway.