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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSE13003H1ASTU

Name: KSE13003H1ASTU
Brand: onsemi
SKU: KSE13003H1ASTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSE13003H1ASTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: KSE13003H1ASTU.pdf

Description:: TRANS NPN 400V 1.5A TO-126-3

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Product details

Overview

KSE13003H1ASTU from ON Semiconductor is an NPN silicon power transistor designed for high-voltage switching applications, featuring a 400 V V_CEO, 1.5 A DC collector current, and 20 W power dissipation at T_C = 25°C. It is used in switch-mode power supplies, motor control circuits, and DC-DC converters where robust voltage handling and fast turn-on/turn-off are required.

For engineers reviewing the KSE13003H1ASTU datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-126 package, h_FE classification H1 (9–16), V_CE(sat) ≤ 3 V at I_C = 1.5 A / I_B = 0.5 A, and safe operating area validated up to 125 V / 1 A with t_ON = 1.1 ms.

Technical Context

This device operates as a medium-power, high-voltage NPN bipolar junction transistor optimized for linear and switching operation in industrial power conversion. Its design supports stable gain (h_FE = 9–16 at I_C = 0.5 A) and low saturation voltage across defined bias conditions.

The KSE13003H1ASTU uses a planar epitaxial structure with emitter ballasting for current sharing and thermal stability. It meets JEDEC TO-126 mechanical standards and is rated for continuous operation up to T_J = 150°C, with storage range from –65°C to +150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Maximum collector-emitter voltage before breakdown under open-base condition; enables use in 380 VAC-derived DC bus applications.
I_C (DC)	1.5 A - Continuous collector current rating; defines maximum steady-state load current without derating at T_C = 25°C.
P_C	20 W - Collector power dissipation at case temperature 25°C; requires heatsinking above ~5 W in typical PCB layouts.
h_FE	9–16 - DC current gain at V_CE = 2 V, I_C = 0.5 A; determines base drive requirement for saturation in switching designs.
V_CE(sat)	≤3 V at I_C = 1.5 A / I_B = 0.5 A - Saturation voltage defining conduction loss and thermal stress during on-state operation.
f_T	4 MHz - Current-gain bandwidth product at V_CE = 10 V, I_C = 0.1 A; indicates usable frequency limit for small-signal amplification.
t_ON	1.1 ms - Turn-on time under specified test conditions (V_CC = 125 V, R_L = 125 Ω); constrains minimum switching frequency in hard-switched topologies.

Pinout & Package

Package: TO-126 - Three-lead, through-hole plastic power package with collector-connected tab for heatsinking; lead length conforms to "short lead" STU variant per Fairchild ordering nomenclature.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitting terminal for majority carriers	Connected to lowest potential node in common-emitter configuration; carries full load current in switching applications.
2 (Collector)	Current-collecting terminal	Internally bonded to metal tab; must be electrically isolated from heatsink unless circuit design permits common-collector reference.
3 (Base)	Control electrode for carrier injection	Requires current-limited drive (max I_B = 0.75 A) to ensure saturation without overdrive-induced storage delay.

Key Features

Feature	Design Value
High-voltage capability	V_CEO = 400 V supports direct interface with rectified 277 VAC or 400 VDC bus rails without series stacking.
Fast switching performance	t_ON = 1.1 ms, t_F = 0.7 ms, t_STG = 4.0 ms enable operation up to ~200 Hz in hard-switched SMPS designs.
Thermal robustness	Rated T_J = 150°C and T_STG = –65°C to +150°C allow deployment in industrial ambient environments with minimal derating.
h_FE classification	H1 bin (h_FE = 9–16) ensures predictable base drive requirements and consistent gain matching within production lots.

Applications

Switch-Mode Power Supply	DC Motor Drive
Use Scenario: Used as main switching transistor in offline flyback or forward converter primary side, operating from 375 VDC input. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling energy transfer via transformer primary winding; driven by discrete base driver or optocoupled controller. Use Value: With V_CEO = 400 V and I_C = 1.5 A, it sustains peak currents in 25–50 W power supplies while maintaining safe SOA margins.	Use Scenario: Controls brushed DC motor in industrial actuator with 24–48 V supply and 1–2 A stall current. IC Role / Device Role / Timing Role: Low-side switch in H-bridge half-bridge stage or single-ended chopper; commutated at <200 Hz. Use Value: V_CE(sat) ≤ 3 V at 1.5 A limits conduction loss to <4.5 W, reducing heatsink size versus higher-V_CE(sat) alternatives.
Induction Heater Driver	Capacitor Discharge Circuit
Use Scenario: Drives resonant tank in low-frequency induction heating system (20–100 kHz) with pulsed 100–200 V loads. IC Role / Device Role / Timing Role: Hard-switched power switch in Class-D or Class-E amplifier output stage; operated with forced base drive. Use Value: Cob = 21 pF minimizes capacitive loading on driver stage; f_T = 4 MHz supports stable gate/base drive loop response.	Use Scenario: Triggers high-energy capacitor discharge into ignition coil or flash lamp in safety-critical timing systems. IC Role / Device Role / Timing Role: Fast-turn-on switch releasing stored energy from 100–400 V capacitor bank; triggered by microcontroller GPIO. Use Value: t_ON = 1.1 ms ensures precise discharge timing; I_CP = 3 A handles short-duration surge currents beyond DC rating.

Switch-Mode Power Supply

DC Motor Drive

Use Scenario: Used as main switching transistor in offline flyback or forward converter primary side, operating from 375 VDC input.

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling energy transfer via transformer primary winding; driven by discrete base driver or optocoupled controller.

Use Value: With V_CEO = 400 V and I_C = 1.5 A, it sustains peak currents in 25–50 W power supplies while maintaining safe SOA margins.

Use Scenario: Controls brushed DC motor in industrial actuator with 24–48 V supply and 1–2 A stall current.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge half-bridge stage or single-ended chopper; commutated at <200 Hz.

Use Value: V_CE(sat) ≤ 3 V at 1.5 A limits conduction loss to <4.5 W, reducing heatsink size versus higher-V_CE(sat) alternatives.

Induction Heater Driver

Capacitor Discharge Circuit

Use Scenario: Drives resonant tank in low-frequency induction heating system (20–100 kHz) with pulsed 100–200 V loads.

IC Role / Device Role / Timing Role: Hard-switched power switch in Class-D or Class-E amplifier output stage; operated with forced base drive.

Use Value: Cob = 21 pF minimizes capacitive loading on driver stage; f_T = 4 MHz supports stable gate/base drive loop response.

Use Scenario: Triggers high-energy capacitor discharge into ignition coil or flash lamp in safety-critical timing systems.

IC Role / Device Role / Timing Role: Fast-turn-on switch releasing stored energy from 100–400 V capacitor bank; triggered by microcontroller GPIO.

Use Value: t_ON = 1.1 ms ensures precise discharge timing; I_CP = 3 A handles short-duration surge currents beyond DC rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE13003G	Same TO-126 package, V_CEO = 400 V, but h_FE = 8–16 (no binning), f_T = 4 MHz, t_ON ≈ 1.2 ms.	No h_FE classification; wider gain spread increases base drive design margin requirement.	Select when cost sensitivity outweighs need for guaranteed h_FE consistency; verify base drive under worst-case gain.
BU508AF	TO-220 package, V_CEO = 1500 V, I_C = 10 A, P_C = 125 W; significantly larger footprint and higher current capability.	Designed for >500 W inverters and CRT horizontal deflection; over-specified for sub-50 W KSE13003H1ASTU use cases.	Choose only if upgrading to higher power or requiring >400 V blocking; requires PCB layout change and thermal redesign.

Compared with MJE13003G and BU508AF, the KSE13003H1ASTU offers guaranteed h_FE binning (H1) and TO-126 compatibility for space-constrained 25–50 W designs, whereas MJE13003G lacks gain grading and BU508AF demands larger board area and heatsinking.

Availability

KSE13003H1ASTU is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, and capacitor discharge circuits requiring stable component supply and legacy-compatible TO-126 packaging.

Supply support for KSE13003H1ASTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic devices for automotive, industrial, and consumer markets.

The KSE13003H1ASTU belongs to ON Semiconductor's legacy high-voltage bipolar transistor product line, originally developed by Fairchild for industrial switching applications demanding reliability at elevated voltage and temperature.

FAQ

What is the package type and lead configuration of the KSE13003H1ASTU?

The KSE13003H1ASTU uses a TO-126 plastic package with three leads: Pin 1 is Emitter, Pin 2 is Collector (connected to the metal tab), and Pin 3 is Base. The "STU" suffix denotes short leads and tube packaging, per Fairchild's original ordering convention. This configuration supports through-hole mounting and direct heatsinking via the collector tab.

What does the "H1" in KSE13003H1ASTU signify?

The "H1" in KSE13003H1ASTU indicates the h_FE (DC current gain) classification bin, specifying a guaranteed range of 9–16 when measured at V_CE = 2 V and I_C = 0.5 A. This binning allows designers to accurately calculate required base drive current and ensures consistent switching behavior across production units of the KSE13003H1ASTU.

Is the KSE13003H1ASTU still in active production?

No - the KSE13003H1ASTU is marked as DISCONTINUED in official ON Semiconductor documentation. While not actively manufactured, Aetrix Electronics maintains limited legacy inventory and supports continuity programs for existing designs. Customers should contact ON Semiconductor directly for replacement recommendations or long-term obsolescence planning related to the KSE13003H1ASTU.

What are the absolute maximum ratings for the KSE13003H1ASTU?

The KSE13003H1ASTU has absolute maximum ratings of V_CBO = 700 V, V_CEO = 400 V, V_EBO = 9 V, I_C = 1.5 A (DC), I_CP = 3 A (pulse), P_C = 20 W at T_C = 25°C, and T_J = 150°C. These values define electrical and thermal boundaries beyond which device reliability cannot be assured - operation must remain within all limits simultaneously for the KSE13003H1ASTU.

Can the KSE13003H1ASTU replace the KSE13003H2ASTU or KSE13003H3ASTU?

No - the KSE13003H1ASTU is not interchangeable with KSE13003H2ASTU or KSE13003H3ASTU without circuit validation. While identical in package and voltage/current ratings, their h_FE bins differ: H1 = 9–16, H2 = 14–21, H3 = 19–26. Substituting changes base drive requirements and may cause incomplete saturation or excessive power dissipation in the KSE13003H1ASTU if designed for higher-gain variants.

KSE13003H1ASTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 500mA, 1.5A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 9 @ 500mA, 2V

Power - Max:: 20 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126-3

KSE13003H1ASTU FAQ

1.How can I place an order for KSE13003H1ASTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSE13003H1ASTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSE13003H1ASTU reliable?

The price and inventory of KSE13003H1ASTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSE13003H1ASTU is usually 5 days.

3.What payment methods are accepted for KSE13003H1ASTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSE13003H1ASTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSE13003H1ASTU?

KSE13003H1ASTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSE13003H1ASTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSE13003H1ASTU?

For technical support, including KSE13003H1ASTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSE13003H1ASTU requirements.

6.How does Aetrix verify that KSE13003H1ASTU is sourced from the original manufacturer or authorized distributors?

All KSE13003H1ASTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSE13003H1ASTU meets industry standards.

7.What is the process for return or replacement of KSE13003H1ASTU?

All KSE13003H1ASTU units undergo pre-shipment inspection (PSI). If there is an issue with KSE13003H1ASTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSE13003H1ASTU part is unused and in its original packaging.

Return procedure for KSE13003H1ASTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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