onsemi KSE13003TH1ATU

Overview

KSE13003TH1ATU from ON Semiconductor is an NPN silicon power transistor in TO-220 package, rated for 400 V V_CEO, 1.5 A DC collector current, and 30 W power dissipation at T_C = 25°C. It delivers high-voltage switching performance with 4 MHz f_T, low V_CE(sat) (1.0 V max at I_C = 1 A, I_B = 0.25 A), and fast switching times (t_ON = 1.1 µs, t_F = 0.7 µs), targeting offline switch-mode power supplies and motor control circuits.

For engineers reviewing the KSE13003TH1ATU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) compliance at high voltage, DC current gain (h_FE = 5–40 at I_C = 1 A), thermal derating behavior, and TO-220 mechanical compatibility with heatsink mounting requirements.

Technical Context

The KSE13003TH1ATU is a ruggedized NPN bipolar junction transistor optimized for high-voltage, medium-current switching. Its 700 V V_CBO rating and 400 V V_CEO support operation in flyback and forward converter primary-side switches. The device exhibits defined saturation characteristics (V_BE(sat) = 1.2 V max at I_C = 1 A, I_B = 0.25 A) and controlled charge storage (t_STG = 4.0 µs), enabling predictable turn-off in hard-switched topologies.

Thermal design is governed by its 30 W P_C rating at T_C = 25°C and linear derating above 25°C, with maximum junction temperature of 150°C. Its 21 pF output capacitance (C_ob) at V_CB = 10 V supports moderate-frequency switching up to several hundred kHz without excessive capacitive losses.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Mounting requires electrically isolated heatsink due to collector-connected tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with MJE13003 and BU508AF, the KSE13003TH1ATU offers superior balance of saturation voltage, switching speed, and SOA robustness for 100–200 kHz industrial SMPS and motor drives where thermal headroom and drive simplicity are critical.

Availability

KSE13003TH1ATU is available at Aetrix Electronics and suitable for offline switching power supplies, DC motor control drivers, and LED driver circuits requiring stable component supply, long-term industrial availability, and consistent TO-220 mechanical form factor.

Supply support for KSE13003TH1ATU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSE13003TH1ATU belongs to ON Semiconductor's high-voltage bipolar transistor product line, designed specifically for cost-sensitive, high-reliability switching applications in industrial power conversion and motion control systems.

FAQ

What is the maximum continuous collector current for KSE13003TH1ATU at 100°C case temperature?

The KSE13003TH1ATU has a linear power derating curve starting at 25°C. At T_C = 100°C, its allowable collector dissipation drops to approximately 15 W. Using V_CE(sat) ≈ 1.0 V, the corresponding maximum continuous I_C is ~15 A × (15 W / 30 W) = 0.75 A. This value assumes adequate heatsinking and stable thermal interface conditions. Always verify actual junction temperature using θ_JC = 1.5°C/W and measured T_C in final layout. The KSE13003TH1ATU must not exceed 150°C T_J.

Is KSE13003TH1ATU pin-compatible with older Fairchild KSE13003 variants?

Yes - the KSE13003TH1ATU retains identical TO-220 pinout (Base–Collector–Emitter, left-to-right with tab facing outward) and mechanical dimensions as legacy Fairchild KSE13003 devices. The "H1ATU" suffix denotes ON Semiconductor's updated packaging and traceability standard, but electrical and mechanical compatibility is maintained. No PCB layout changes are needed when replacing prior KSE13003 versions with KSE13003TH1ATU.

Does KSE13003TH1ATU support avalanche energy rating?

No - the KSE13003TH1ATU datasheet does not specify single-pulse avalanche energy (E_AS) or repetitive avalanche ratings. It is not characterized or guaranteed for unclamped inductive switching (UIS) operation. For circuits subject to inductive turn-off stress, external clamping (RCD snubber or TVS) is mandatory. The KSE13003TH1ATU relies on SOA compliance and proper snubbing, not intrinsic avalanche capability, for reliability.

What is the typical DC current gain (h_FE) of KSE13003TH1ATU at 0.5 A collector current?

Per the official ON Semiconductor datasheet, the KSE13003TH1ATU exhibits h_FE = 8–40 at V_CE = 2 V and I_C = 0.5 A. The typical value falls near 20–25 under these conditions. This wide spread reflects process variation and necessitates base drive design accommodating the minimum h_FE of 8 to ensure saturation across all units. The KSE13003TH1ATU's gain decreases significantly at higher currents (h_FE = 5–40 at I_C = 1 A).

Can KSE13003TH1ATU be used in linear regulator applications?

The KSE13003TH1ATU is not optimized for linear operation. While it can function as a pass transistor, its relatively high V_CE(sat) and limited SOA at low V_CE restrict usable linear region. At V_CE = 5 V and I_C = 1 A, power dissipation reaches 5 W - demanding substantial heatsinking. For linear regulators, dedicated pass transistors with wider SOA and lower saturation voltage (e.g., MJ15003) are preferred. The KSE13003TH1ATU should only be used linearly with strict thermal monitoring and derated current limits.