onsemi KSE13003TH2ATU

Overview

KSE13003TH2ATU from ON Semiconductor is an NPN silicon power transistor in TO-220 package, rated for 400 V V_CEO, 1.5 A DC collector current, and 30 W power dissipation at T_C = 25°C. It delivers high-voltage switching performance with 4 MHz f_T, low V_CE(sat) (1.0 V at I_C = 1 A, I_B = 0.25 A), and fast switching times (t_ON = 1.1 µs, t_F = 0.7 µs), targeting offline switch-mode power supplies and motor control circuits.

For engineers reviewing the KSE13003TH2ATU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) compliance at 125 V/1 A, V_BE(sat) stability under 0.5–1.5 A load, thermal derating above 25°C case temperature, and compatibility with standard TO-220 heatsinking footprints.

Technical Context

The KSE13003TH2ATU is a high-voltage, medium-current bipolar junction transistor optimized for hard-switching applications where voltage blocking and controlled saturation are critical. Its 700 V V_CBO rating supports robust operation in flyback and forward converter primary-side switching, while its 150°C maximum junction temperature enables use in thermally constrained industrial environments.

It operates with DC current gain (h_FE) of 5–40 at V_CE = 2 V, supporting base-driven control in discrete PWM stages. The device exhibits 21 pF output capacitance at V_CB = 10 V and 0.1 MHz, contributing to predictable turn-off behavior in resonant and quasi-resonant topologies.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Standard through-hole mounting with integral metal tab for mechanical attachment and thermal conduction to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with MJE13003G and ST13003, the KSE13003TH2ATU offers superior small-signal bandwidth and tighter V_CE(sat) control-advantageous in high-efficiency, high-frequency SMPS where gain consistency and conduction loss matter most.

Availability

KSE13003TH2ATU is available at Aetrix Electronics and suitable for offline switch-mode power supplies, DC motor control circuits, and industrial relay replacement applications requiring stable component supply and long-term manufacturing continuity.

Supply support for KSE13003TH2ATU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSE13003TH2ATU belongs to ON Semiconductor's high-voltage bipolar transistor product line, engineered specifically for ruggedized, cost-sensitive switching applications in AC-DC conversion and motor control where reliability under thermal and electrical stress is essential.

FAQ

What is the maximum junction temperature specification for the KSE13003TH2ATU?

The KSE13003TH2ATU has a maximum junction temperature (T_J) of 150°C, as specified in its Absolute Maximum Ratings table. This rating defines the upper thermal limit for safe semiconductor operation. Exceeding 150°C risks permanent degradation of the silicon die and bond wires. To maintain reliability, designers must ensure that actual T_J under worst-case operating conditions-including ambient temperature, power dissipation, and heatsink performance-remains within this limit. Thermal calculations for the KSE13003TH2ATU should use the published R_θJC and R_θJA values from the official ON Semiconductor datasheet.

Does the KSE13003TH2ATU support pulse operation beyond its DC current rating?

Yes, the KSE13003TH2ATU supports pulsed collector current (I_CP) up to 3 A under defined test conditions: pulse width = 5 ms and duty cycle ≤10%. This capability enables short-duration peak loads-for example, in motor startup surges or inrush limiting-without exceeding thermal limits. However, sustained operation above 1.5 A DC requires verification of SOA compliance at the applied V_CE and pulse duration. The KSE13003TH2ATU's Safe Operating Area curve (Figure 5 in the datasheet) must be consulted to confirm that any given V_CE/I_C combination falls within the bounded region for the intended pulse profile.

Is the KSE13003TH2ATU pin-compatible with other TO-220 NPN transistors like the MJE13003?

Yes, the KSE13003TH2ATU uses the standard TO-220AB package with pin configuration Base–Collector–Emitter (1–2–3), matching the MJE13003 and ST13003. This physical pinout allows direct PCB footprint reuse. However, while mechanical compatibility exists, electrical differences-including h_FE range, V_CE(sat), and switching times-require validation in the target circuit. The KSE13003TH2ATU is not guaranteed as a drop-in replacement unless the design accommodates its specific gain and saturation characteristics. Always verify base drive strength and thermal performance when substituting the KSE13003TH2ATU into an existing MJE13003 layout.

What is the typical value of h_FE for the KSE13003TH2ATU at I_C = 1 A?

The typical DC current gain (h_FE) for the KSE13003TH2ATU at V_CE = 2 V and I_C = 1 A is 20, per the Electrical Characteristics table. This value falls between the minimum (5) and maximum (40) specifications, representing the median expected gain under those test conditions. Since h_FE varies with temperature, collector current, and individual unit dispersion, designs relying on precise current amplification-such as linear regulators or analog amplifiers-must account for this 4:1 spread. For switching applications, the KSE13003TH2ATU is typically overdriven (e.g., I_B ≥ I_C/10) to ensure saturation regardless of h_FE variation.

Can the KSE13003TH2ATU be used in avalanche mode?

No, the KSE13003TH2ATU is not rated or characterized for repetitive avalanche operation. Its datasheet does not specify avalanche energy (E_AS) or ruggedness testing, and the Safe Operating Area curve excludes the avalanche region. While the device may survive a single unclamped inductive switching event due to its 700 V V_CBO rating, intentional use in avalanche mode risks parametric shift or catastrophic failure. For circuits requiring clamping or energy absorption-such as snubberless flybacks-external protection (e.g., RCD clamp or TVS diode) is mandatory. The KSE13003TH2ATU should always operate within its SOA boundaries, with V_CE limited by external components, not by controlled avalanche breakdown.