Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSE171STU

Part No.:
KSE171STU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
AetrixKSE171STU.pdf
Description:
TRANS PNP 60V 3A TO-126-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,252

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSE171STU from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon transistor designed for low-power audio amplification and high-speed switching applications. It features VCEO = −60 V, IC = −3 A, PC = 12.5 W at TC = 25°C, hFE ≥ 30 at IC = −500 mA, and fT = 50 MHz - enabling use in Class-B audio output stages and relay drivers.

For engineers reviewing the KSE171STU datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-126 package thermal performance, DC current gain linearity across −100 mA to −1.5 A, saturation voltage behavior under forced β = 10, and safe operating area compliance up to 500 µs pulse width.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with epitaxial base construction for improved frequency response and ruggedness. Its −60 V VCEO, −80 V VCBO, and 50 MHz fT support stable operation in linear amplification and fast-switching topologies where turn-on/off times are critical.

The KSE171STU delivers defined saturation characteristics: VCE(sat) = −0.9 V at IC = −1.5 A / IB = −150 mA and VBE(sat) = −1.5 V under same conditions, enabling predictable drive requirements in complementary push-pull configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−60 V - Maximum collector-emitter voltage before breakdown; defines usable supply rail headroom in PNP switch/amplifier designs
IC (DC)−3 A - Continuous collector current rating; sets maximum sustained load-handling capability at TC ≤ 25°C
PC (TC=25°C)12.5 W - Thermal power dissipation limit with heatsink; determines minimum heatsink requirement for linear operation
hFE30–250 - DC current gain range at VCE = −1 V; impacts base drive sizing and bias stability in amplifier stages
fT50 MHz - Current-gain bandwidth product; confirms suitability for audio-frequency amplification and <100 ns switching
Cob50 pF - Output capacitance at VCB = −10 V; influences high-frequency roll-off and switching losses in tuned circuits

Pinout & Package

Package: TO-126 - Three-lead plastic power package with metal tab for heatsinking; case temperature monitoring and mechanical mounting via tab screw.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Emitter terminalReference node for PNP current flow; connects to most positive rail in common-emitter configuration
2 (Collector)Collector terminalMain current sink path; electrically connected to heatsink tab; requires isolation if tab is mounted to chassis
3 (Base)Control inputCurrent-driven gate; requires negative base current relative to emitter to turn on; typical RB = 1–10 Ω for fast switching

Key Features

FeatureDesign Value
Epitaxial base structureEnables 50 MHz fT and controlled minority-carrier lifetime for consistent switching speed
High VCBO (−80 V)Supports robust operation in inductive load switching with flyback voltage spikes up to −80 V
Low VCE(sat) (−0.9 V @ −1.5 A)Reduces conduction loss by >30% vs. legacy PNP transistors, improving efficiency in Class-B output stages
TO-126 thermal design12.5 W dissipation at TC = 25°C enables compact heatsink integration without derating below 100°C case temp

Applications

Audio Power AmplifierRelay Driver Circuit

Use Scenario: Complementary Class-B output stage in 5–10 W audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: PNP output transistor delivering negative half-cycle current; paired with NPN KSE130/KSC1845.

Use Value: VCEO = −60 V and hFE ≥ 30 at −500 mA ensure low crossover distortion and stable quiescent current control.

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoids or indicator lamps.

IC Role / Device Role / Timing Role: High-current PNP switch sinking load current to ground when base is pulled low.

Use Value: IC = −3 A and VCE(sat) = −0.9 V minimize heat generation during continuous 2 A load operation.

DC Motor Control (H-Bridge Low-Side)Linear Voltage Regulator Pass Element

Use Scenario: Low-side PNP switch in asymmetric H-bridge for bidirectional 12 V DC motor control (≤2 A).

IC Role / Device Role / Timing Role: Sinks motor current during reverse-phase conduction; coordinated with N-channel MOSFET high-side.

Use Value: 50 MHz fT and tF < 200 ns enable clean commutation at PWM frequencies up to 20 kHz.

Use Scenario: Series pass element in adjustable linear regulators supplying −5 V to −15 V at up to 1.5 A.

IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by varying VBE bias.

Use Value: VBE(on) = −1.2 V and hFE linearity over −100 mA to −1.5 A allow precise current mirror-based error amplification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD2955GVCEO = −70 V, IC = −10 A, PC = 15 W, TO-220 packageHigher power handling; larger footprint; requires different heatsink interfaceSelect when >3 A continuous current or >12.5 W dissipation is required; verify PCB layout compatibility
KSB1151YTAVCEO = −60 V, IC = −2 A, hFE = 60–240, TO-126 packageLower IC rating but higher hFE consistency; tighter gain binningPrefer for precision biasing in low-distortion preamp stages where gain matching matters more than peak current

Compared with MJD2955G and KSB1151YTA, the KSE171STU offers optimal balance of TO-126 footprint, −60 V/−3 A rating, and 50 MHz bandwidth - making it ideal for space-constrained audio and switching designs where thermal management and gain-bandwidth trade-offs are critical.

Availability

KSE171STU is available at Aetrix Electronics and suitable for audio amplifier modules, industrial relay interfaces, DC motor controllers, and linear regulator subsystems requiring stable component supply and long-term obsolescence mitigation.

Supply support for KSE171STU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, power management, and analog solutions for automotive, industrial, and consumer markets.

The KSE171STU belongs to Fairchild's legacy discrete power transistor family, engineered specifically for cost-sensitive, medium-power linear and switching applications where reliability, thermal performance, and gain consistency are essential.

FAQ

What is the maximum continuous collector current rating for KSE171STU?

The KSE171STU has a maximum continuous collector current (IC) rating of −3 A at case temperature TC = 25°C. This rating assumes adequate heatsinking; derating applies above 25°C per the 12.5 W power dissipation limit. At TC = 100°C, the usable IC drops to approximately −1.8 A. The KSE171STU must be operated within its Safe Operating Area (SOA) curve, especially under pulsed conditions.

Is KSE171STU pin-compatible with other TO-126 PNP transistors like KSE130 or MJE2955?

No, KSE171STU is not pin-compatible with KSE130 (NPN) or MJE2955 (PNP in TO-220). While all three use TO-style packages, KSE171STU uses TO-126 with pinout E-C-B (Emitter–Collector–Base), whereas MJE2955 uses TO-220 with E-B-C ordering. KSE130 is NPN and electrically opposite. Direct substitution requires verification of polarity, pinout, gain, and SOA - the KSE171STU is intended for complementary use with NPN KSE130 in push-pull stages, not as a drop-in replacement.

What is the typical DC current gain (hFE) of KSE171STU at −500 mA collector current?

The KSE171STU exhibits a minimum hFE of 30 at VCE = −1 V and IC = −500 mA, with a typical value near 100 and maximum up to 250. This gain range supports stable biasing in Class-B audio output stages and ensures sufficient drive margin for base resistors in switching applications. The KSE171STU's hFE remains usable down to −1.5 A (min 12), enabling predictable operation across its rated current range.

Can KSE171STU be used in high-frequency switching applications above 1 MHz?

Yes - the KSE171STU has an fT of 50 MHz and documented turn-off time (tF) under 200 ns at IC = −1.5 A, supporting reliable operation up to ~20 MHz in optimized circuits. However, its Cob = 50 pF and VCE(sat) rise at high current require careful gate/base drive design. For >10 MHz switching, the KSE171STU is viable only with low-inductance layout, active base clamping, and load impedance matching - the KSE171STU is not recommended for RF power amplification but well-suited for audio and SMPS auxiliary switches.

Does KSE171STU have built-in protection features such as thermal shutdown or overcurrent limiting?

No, the KSE171STU is a fundamental bipolar junction transistor with no integrated protection circuitry. It relies entirely on external design safeguards: current-limiting base resistors, heatsinking, SOA-aware layout, and external foldback or shutdown circuitry. Its 150°C maximum junction temperature and −65°C to +150°C storage range define absolute limits - sustained operation above 125°C junction temperature risks parametric shift and premature failure. System-level protection must be implemented externally for the KSE171STU.

KSE171STU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 100mA, 1V
Power - Max:
1.5 W
Frequency - Transition:
50MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126-3

KSE171STU FAQ

1.How can I place an order for KSE171STU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSE171STU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSE171STU reliable?

The price and inventory of KSE171STU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSE171STU is usually 5 days.

3.What payment methods are accepted for KSE171STU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSE171STU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSE171STU?

KSE171STU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSE171STU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSE171STU?

For technical support, including KSE171STU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSE171STU requirements.

6.How does Aetrix verify that KSE171STU is sourced from the original manufacturer or authorized distributors?

All KSE171STU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSE171STU meets industry standards.

7.What is the process for return or replacement of KSE171STU?

All KSE171STU units undergo pre-shipment inspection (PSI). If there is an issue with KSE171STU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSE171STU part is unused and in its original packaging.

Return procedure for KSE171STU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSE171STU Tags

  • KSE171STU
  • KSE171STU PDF
  • KSE171STU Datasheet
  • KSE171STU Specifications
  • KSE171STU Images
  • onsemi
  • onsemi KSE171STU
  • Buy KSE171STU
  • KSE171STU Price
  • KSE171STU Distributor
  • KSE171STU Supplier
  • KSE171STU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER