onsemi KSE44H11

Overview

KSE44H11 from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-220 package, rated for 80 V V_CEO, 10 A DC collector current, and 50 W collector dissipation at T_C = 25°C. It delivers low 1 V V_CE(sat) at 8 A/0.4 A drive and supports fast switching with 300 ns t_ON, 500 ns t_STG, and 140 ns t_F - used in high-current linear regulators and motor drive output stages.

For engineers reviewing the KSE44H11 datasheet, pinout, applications, or equivalent options, key selection criteria include its 80 V breakdown rating, 10 A continuous current capability, TO-220 thermal performance, and complementary pairing with KSE45H series devices in push-pull amplifier designs.

Technical Context

The KSE44H11 operates as a general-purpose NPN power switching transistor with fixed three-terminal topology (Base–Collector–Emitter). Its design emphasizes low saturation voltage and robust safe operating area (SOA) up to 10 A/80 V under pulsed conditions, validated per JEDEC JESD22-A108 thermal cycling standards.

It features a DC current gain (h_FE) of 35–60 at V_CE = 1 V and I_C = 2 A, 50 MHz f_T at V_CE = 10 V/I_C = 0.5 A, and 130 pF Cob at V_CB = 10 V/f = 1 MHz - confirming suitability for medium-frequency switching above audio band but below RF ranges.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab), 15.90 mm × 10.08 mm × 18.95 mm max height, with mounting hole ø3.60 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Compared with MJE13009 and BD249C, the KSE44H11 uniquely balances 80 V rating, 10 A current, 1 V saturation, and 140 ns fall time - making it optimal for thermally constrained, medium-frequency switching where conduction loss dominates.

Availability

KSE44H11 is available at Aetrix Electronics and suitable for industrial motor drives, linear power supplies, and audio amplifier output stages requiring stable component supply and long-term manufacturing continuity.

Supply support for KSE44H11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSE44H11 belongs to ON Semiconductor's legacy Fairchild power transistor portfolio, designed specifically for high-reliability, medium-power linear and switching applications demanding rugged SOA and predictable saturation behavior.

FAQ

What is the maximum junction temperature for the KSE44H11?

The KSE44H11 has a maximum junction temperature (T_J) of 150°C, as specified in its Absolute Maximum Ratings table. This rating applies under steady-state thermal conditions with proper heatsinking. Operation beyond this limit risks permanent degradation of h_FE and increased leakage currents. Derating curves in Figure 5 confirm that usable power dissipation drops linearly above 25°C case temperature - for example, KSE44H11 supports only ~30 W at T_C = 75°C.

Does the KSE44H11 have a built-in base-emitter resistor?

No, the KSE44H11 is a standard three-lead discrete NPN bipolar junction transistor without any integrated base-emitter resistors. It requires external base drive circuitry - typically a current-limiting resistor or dedicated driver IC - to establish proper I_B for desired I_C. The datasheet specifies base-emitter saturation voltage (V_BE(sat)) as 1.5 V at I_C = 8 A/I_B = 0.8 A, confirming conventional BJT behavior. This distinguishes KSE44H11 from digital transistors like the NSBC114EPX.

Can the KSE44H11 replace the KSE44H10 in a circuit?

Yes, the KSE44H11 can directly replace the KSE44H10 because both share identical package (TO-220), pinout (Base–Collector–Emitter), and electrical ratings except for V_CEO: KSE44H10 is rated at 60 V while KSE44H11 is rated at 80 V. All other parameters - including I_C = 10 A, P_C = 50 W, V_CE(sat) = 1 V, and h_FE = 35–60 - are identical. Using KSE44H11 in place of KSE44H10 provides additional voltage margin without circuit modification.

What is the safe operating area (SOA) limitation for the KSE44H11 at 100°C case temperature?

At T_C = 100°C, the KSE44H11's SOA is limited by second breakdown to approximately 4 A at 40 V (per Figure 4 derating curve), down from 10 A/80 V at 25°C. This reflects thermal compression of the forward-biased safe area due to reduced minority-carrier lifetime and localized heating. For reliable operation above 75°C case temperature, designers must verify that transient load conditions remain within the shaded SOA boundary - especially during inductive turn-off events where voltage and current overlap.

Is the KSE44H11 RoHS compliant and halogen-free?

Yes, the KSE44H11 is RoHS compliant and halogen-free per ON Semiconductor's product change notification PCN-1902151 and material declarations. It meets EU Directive 2011/65/EU and IEC 61249-2-21:2013 standards, with lead content <1000 ppm and bromine/chlorine <900 ppm. The TO-220 package uses matte tin-plated leads and halogen-free molding compound. Full compliance documentation is available via ON Semiconductor's Quality & Environmental page using KSE44H11 as the search term.