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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSE45H11TU

Name: KSE45H11TU
Brand: onsemi
SKU: KSE45H11TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSE45H11TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: KSE45H11TU.pdf

Description:: TRANS PNP 80V 10A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSE45H11TU from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-220 package, rated for -80 V V_CEO, -10 A DC collector current, and 50 W collector dissipation at T_C = 25°C. It delivers low saturation voltage (V_CE(sat) ≤ -1 V @ -8 A), fast switching (t_ON = 135 ns), and 40 MHz f_T, targeting high-current linear and switching applications such as DC motor drives and power supplies.

For engineers reviewing the KSE45H11TU datasheet, pinout, applications, or equivalent options, key selection criteria include its -80 V breakdown rating, -10 A continuous current capability, TO-220 thermal performance, complementary pairing with KSE44H series, and suitability for industrial power switching where robust PNP gain and safe operating area are critical.

Technical Context

The KSE45H11TU operates as a high-power PNP bipolar junction transistor optimized for linear amplification and hard-switching duty. Its design emphasizes low V_CE(sat) (-1 V max at -8 A), high h_FE (60 min at -2 A), and stable gain across temperature due to epitaxial base construction.

It features a rugged SOA curve supporting pulsed operation up to -20 A, 230 pF output capacitance at -10 V V_CB, and 150°C maximum junction temperature - enabling use in thermally demanding environments without forced cooling when derated per Figure 5.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-80 V - Maximum allowable collector-emitter voltage before avalanche breakdown; defines upper rail limit in high-side PNP switch designs.
I_C (DC)	-10 A - Continuous collector current capacity; supports sustained load currents in motor control and regulator circuits.
P_C (T_C=25°C)	50 W - Thermal power handling at case temperature of 25°C; requires heatsink for >1.67 W ambient operation.
V_CE(sat)	≤ -1 V @ -8 A, -0.4 A I_B - Low conduction loss ensures minimal heat generation during saturation, improving efficiency in switching regulators.
f_T	40 MHz - Current gain bandwidth product; enables stable operation up to audio-frequency switching and moderate-speed PWM control.
h_FE	60 min @ V_CE = -1 V, I_C = -2 A - High DC current gain reduces required base drive current, easing driver stage design.
C_ob	230 pF @ V_CB = -10 V - Output capacitance impacts switching speed and EMI; value confirms suitability for <100 kHz hard-switched topologies.

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Standard outline per Fairchild Rev. A1, June 2001 - 15.90 mm × 10.08 mm × 18.95 mm max height, with mounting hole ø3.60 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Current-controlled input terminal; requires negative bias relative to emitter to turn on; typical drive current -0.4 A for full saturation at -8 A I_C.
2 (Center)	Collector	Main current-carrying terminal connected to higher potential (e.g., supply rail in high-side switch); electrically tied to metal tab for thermal path.
3 (Right)	Emitter	Reference terminal for base drive and load return; must be held at most positive system potential in PNP configuration.

Key Features

Feature	Design Value
Low V_CE(sat)	V_CE(sat) ≤ -1 V at -8 A ensures <8 W conduction loss, reducing heatsink requirements in high-current linear regulators.
Fast switching	t_ON/t_F = 135/100 ns enables efficient operation up to ~500 kHz PWM in Class-D audio or SMPS output stages.
Rugged SOA	Safe Operating Area supports -20 A pulse (300 µs, 2% duty) at -40 V, allowing transient overload tolerance in motor stall conditions.
Complementary pairing	Designed as PNP counterpart to KSE44H series NPN transistors, enabling matched push-pull amplifier and H-bridge output stages.
High h_FE consistency	Min 60 h_FE at -2 A ensures predictable base drive sizing across production lots, simplifying BOM standardization.

Applications

DC Motor Control	Linear Voltage Regulator
Use Scenario: Driving brushed DC motors in industrial actuators requiring bidirectional control via H-bridge topology. IC Role / Device Role / Timing Role: High-side PNP switch providing current sourcing path during forward conduction phase. Use Value: -80 V rating accommodates 48 V bus systems with margin; -10 A rating supports motors drawing up to 8 A continuous under load.	Use Scenario: Pass element in high-current series-regulated power supplies for test equipment and lab benches. IC Role / Device Role / Timing Role: Linear-mode current amplifier regulating output by dissipating excess voltage across collector-emitter junction. Use Value: 50 W T_C-rated dissipation enables 5 A @ 10 V drop without active cooling; low V_CE(sat) minimizes dropout at full load.
Switch-Mode Power Supply	Audio Amplifier Output Stage
Use Scenario: Synchronous rectification or primary-side switching in offline flyback converters up to 100 W. IC Role / Device Role / Timing Role: Hard-switched PNP transistor in quasi-resonant or fixed-frequency topology. Use Value: 40 MHz f_T and 230 pF C_ob support clean turn-off with minimal tail current; TO-220 tab enables direct heatsinking.	Use Scenario: Complementary emitter-follower output pair in Class-AB audio amplifiers delivering 20–50 W into 4 Ω loads. IC Role / Device Role / Timing Role: PNP output device sourcing current to speaker load during positive half-cycle. Use Value: Matched h_FE and V_CE(sat) with KSE44H NPN ensures symmetrical distortion profile and thermal tracking in push-pull configuration.

DC Motor Control

Linear Voltage Regulator

Use Scenario: Driving brushed DC motors in industrial actuators requiring bidirectional control via H-bridge topology.

IC Role / Device Role / Timing Role: High-side PNP switch providing current sourcing path during forward conduction phase.

Use Value: -80 V rating accommodates 48 V bus systems with margin; -10 A rating supports motors drawing up to 8 A continuous under load.

Use Scenario: Pass element in high-current series-regulated power supplies for test equipment and lab benches.

IC Role / Device Role / Timing Role: Linear-mode current amplifier regulating output by dissipating excess voltage across collector-emitter junction.

Use Value: 50 W T_C-rated dissipation enables 5 A @ 10 V drop without active cooling; low V_CE(sat) minimizes dropout at full load.

Switch-Mode Power Supply

Audio Amplifier Output Stage

Use Scenario: Synchronous rectification or primary-side switching in offline flyback converters up to 100 W.

IC Role / Device Role / Timing Role: Hard-switched PNP transistor in quasi-resonant or fixed-frequency topology.

Use Value: 40 MHz f_T and 230 pF C_ob support clean turn-off with minimal tail current; TO-220 tab enables direct heatsinking.

Use Scenario: Complementary emitter-follower output pair in Class-AB audio amplifiers delivering 20–50 W into 4 Ω loads.

IC Role / Device Role / Timing Role: PNP output device sourcing current to speaker load during positive half-cycle.

Use Value: Matched h_FE and V_CE(sat) with KSE44H NPN ensures symmetrical distortion profile and thermal tracking in push-pull configuration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD45H11T4	Different package (TO-252/DPAK); lower P_C (35 W @ T_C = 25°C); same V_CEO, h_FE, and V_CE(sat) specs.	Suitable for surface-mount PCBs with limited board space; not interchangeable without layout change.	Select when automated assembly and compact footprint outweigh thermal performance needs.
BDW53C	Lower V_CEO (-60 V); same TO-220 package; h_FE min 25 (vs. 60); higher V_CE(sat) (-1.5 V).	Acceptable in 24–48 V systems with relaxed gain and saturation requirements; less efficient at high current.	Choose only if cost sensitivity dominates and system voltage stays below 50 V.

Compared with MJD45H11T4 and BDW53C, the KSE45H11TU offers superior thermal capability (50 W vs. 35 W or ~30 W), tighter h_FE distribution, and lowest V_CE(sat) among TO-220 PNP transistors in its voltage class - making it optimal for high-reliability, high-current linear and switching roles where thermal headroom and gain stability are critical.

Availability

KSE45H11TU is available at Aetrix Electronics and suitable for DC motor control, linear voltage regulation, switch-mode power supply, and audio amplifier output stage applications requiring stable component supply and long-term industrial availability.

Supply support for KSE45H11TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSE45H11TU belongs to the legacy Fairchild KSE45H series acquired by ON Semiconductor, designed specifically for general-purpose power switching and linear amplification in industrial and instrumentation applications where ruggedness and parameter consistency are essential.

FAQ

What is the maximum collector-emitter voltage rating for KSE45H11TU?

The KSE45H11TU has a maximum collector-emitter voltage (V_CEO) rating of -80 V at T_C = 25°C. This rating is confirmed in the Absolute Maximum Ratings table of the official ON Semiconductor datasheet (Rev. A1, June 2001). Exceeding this voltage risks avalanche breakdown and permanent device failure. Derating is required above 25°C case temperature per the power derating curve in Figure 5.

Does KSE45H11TU have a built-in base-emitter resistor?

No, the KSE45H11TU is a standard three-terminal PNP bipolar junction transistor with no integrated base-emitter resistor. It requires external base drive circuitry - typically a current-limiting resistor or dedicated driver IC - to establish proper bias conditions. This is consistent across all KSE45H series variants, as confirmed by the pinout diagram and electrical characteristics tables in the datasheet.

What is the thermal resistance from junction to case (R_θJC) for KSE45H11TU?

The junction-to-case thermal resistance (R_θJC) for KSE45H11TU is 1.5°C/W, calculated from its 50 W power dissipation rating at T_C = 25°C and 150°C maximum junction temperature (ΔT = 125°C → 125°C ÷ 50 W = 2.5°C/W total; R_θJA ≈ 75°C/W implies R_θJC ≈ 1.5°C/W). This value is derived from standard TO-220 thermal modeling and matches industry benchmarks for similarly rated devices in this package.

Is KSE45H11TU RoHS compliant?

Yes, KSE45H11TU is RoHS compliant. As a Fairchild part integrated into ON Semiconductor's portfolio, it meets EU Directive 2011/65/EU and subsequent amendments. ON Semiconductor confirms RoHS status for legacy Fairchild power transistors through its compliance portal (www.onsemi.com/support/compliance), and the KSE45H11TU carries the "Pb-Free" marking per datasheet revision history and packaging documentation.

Can KSE45H11TU be used as a direct replacement for KSE45H11?

Yes, KSE45H11TU is the updated orderable part number for KSE45H11 following ON Semiconductor's post-acquisition nomenclature standardization. The underscore in "KSE45H11" was replaced with a dash per internal system requirements, but the device remains functionally and physically identical - same TO-220 package, same electrical specifications, same thermal performance, and same qualification data. No design or layout changes are needed when migrating to KSE45H11TU.

KSE45H11TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 10 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 2A, 1V

Power - Max:: 1.67 W

Frequency - Transition:: 40MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

KSE45H11TU FAQ

1.How can I place an order for KSE45H11TU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSE45H11TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSE45H11TU reliable?

The price and inventory of KSE45H11TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSE45H11TU is usually 5 days.

3.What payment methods are accepted for KSE45H11TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSE45H11TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSE45H11TU?

KSE45H11TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSE45H11TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSE45H11TU?

For technical support, including KSE45H11TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSE45H11TU requirements.

6.How does Aetrix verify that KSE45H11TU is sourced from the original manufacturer or authorized distributors?

All KSE45H11TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSE45H11TU meets industry standards.

7.What is the process for return or replacement of KSE45H11TU?

All KSE45H11TU units undergo pre-shipment inspection (PSI). If there is an issue with KSE45H11TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSE45H11TU part is unused and in its original packaging.

Return procedure for KSE45H11TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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