onsemi KSE45H8

Overview

KSE45H8 from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-220 package, rated for V_CEO = −60 V, I_C = −10 A DC, and P_C = 50 W at T_C = 25°C. It delivers low saturation voltage (V_CE(sat) ≤ −1 V @ −8 A/−0.4 A), fast switching (t_ON = 135 ns, t_F = 100 ns), and is optimized for general-purpose power switching in industrial motor drives and DC-DC converters.

For engineers reviewing the KSE45H8 datasheet, pinout, applications, or equivalent options, key selection criteria include its −60 V V_CEO, −10 A continuous collector current, TO-220 thermal performance, complementary pairing with KSE44H, and suitability for medium-power linear and switching amplifier stages.

Technical Context

The KSE45H8 operates as a high-current PNP bipolar junction transistor with fixed emitter-base and collector-emitter polarity. Its design emphasizes robust safe operating area (SOA) up to 100 V/10 A in pulse mode and stable DC gain (h_FE = 60 min @ −1 V, −2 A) across temperature.

It features low output capacitance (C_ob = 230 pF @ −10 V), enabling efficient high-frequency switching, and maintains V_BE(sat) = −1.5 V @ −8 A/−0.8 A-critical for base drive loss minimization in push-pull and H-bridge topologies.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, through-hole, insulated tab). Dimensions per Fairchild Rev. A1: 15.90 mm × 10.08 mm × 18.95 mm max, with 2.54 mm lead pitch and 3.60 mm mounting hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD45H11T4 and BD249C, the KSE45H8 offers superior thermal performance (50 W @ T_C) and tighter h_FE binning (60 min) in a proven TO-220 platform-making it optimal for high-reliability, medium-power switching where mechanical robustness and heatsink compatibility are critical.

Availability

KSE45H8 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter output stages, and audio power amplifier designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for KSE45H8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global leader in intelligent power and sensing solutions, serving automotive, industrial, cloud, and consumer markets with energy-efficient semiconductor technologies.

The KSE45H8 belongs to the KSE45H series of general-purpose PNP power transistors, designed specifically for robust, medium-power linear and switching applications-including motor drives, power supplies, and audio amplifiers-where reliability, thermal stability, and complementary NPN pairing are essential.

FAQ

What is the maximum collector-emitter voltage rating for KSE45H8?

The KSE45H8 has a maximum collector-emitter voltage (V_CEO) rating of −60 V at T_C = 25°C. This rating is confirmed in the Absolute Maximum Ratings table of the original Fairchild datasheet (Rev. A1, June 2001) and remains valid under ON Semiconductor's product continuity program. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does KSE45H8 have a built-in base-emitter resistor?

No, the KSE45H8 is a standard three-terminal PNP bipolar junction transistor with no integrated base-emitter resistor. It requires external base drive circuitry-typically a current-limiting resistor or active driver-to establish proper forward bias between base and emitter. This discrete structure provides full design flexibility for gain control and switching speed optimization.

What is the DC current gain (h_FE) range for KSE45H8 at typical operating conditions?

The KSE45H8 has a minimum DC current gain (h_FE) of 60 when tested at V_CE = −1 V and I_C = −2 A, per the Electrical Characteristics table. No maximum h_FE is specified in the datasheet; actual values may vary by unit and temperature. For design purposes, h_FE = 60–120 is a realistic operational range under nominal conditions.

Can KSE45H8 be used in parallel for higher current handling?

Yes, KSE45H8 can be paralleled for increased current capacity, but requires careful attention to emitter ballasting resistors (typically 0.1–0.5 Ω) and matched thermal mounting to ensure current sharing. The device's positive temperature coefficient of V_CE(sat) aids self-balancing, but mismatched heatsinking or layout asymmetry may cause thermal runaway. Always validate derating per application.

Is KSE45H8 RoHS compliant and halogen-free?

Yes, KSE45H8 is RoHS compliant and halogen-free per ON Semiconductor's product continuity documentation and material declarations. As a legacy Fairchild part absorbed into ON Semiconductor's portfolio, it meets JEDEC J-STD-609 Category 1 (halogen-free) and EU RoHS Directive 2011/65/EU requirements. Full compliance data is available in ON Semiconductor's official material content reports.