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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSE45H8TU

Name: KSE45H8TU
Brand: onsemi
SKU: KSE45H8TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSE45H8TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: KSE45H8TU.pdf

Description:: TRANS PNP 60V 10A TO-220-3

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Product details

Overview

KSE45H8TU from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-220 package, rated for -60 V V_CEO, -10 A DC collector current, and 50 W collector dissipation at T_C = 25°C. It delivers low saturation voltage (V_CE(sat) ≤ -1 V @ -8 A), fast switching (t_ON = 135 ns), and 40 MHz f_T, targeting high-current linear and switching applications such as DC motor drives and power supply output stages.

For engineers reviewing the KSE45H8TU datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO = -60 V rating, confirmed TO-220 mechanical footprint, validated h_FE range of 35–60 at -2 A, and documented safe operating area up to 50 W with thermal derating above 25°C case temperature.

Technical Context

The KSE45H8TU operates as a medium-power PNP bipolar junction transistor optimized for linear amplification and hard-switching duty. Its design emphasizes low V_CE(sat) under high-current conduction (-1 V max at -8 A) and robust secondary breakdown immunity per the published SOA curve.

It features complementary pairing with the NPN KSE44H series and shares identical TO-220 package dimensions and terminal assignment (Base–Collector–Emitter). Electrical behavior is characterized at T_C = 25°C with pulse test conditions (PW ≤ 300 µs, duty cycle ≤ 2%) for transient parameters like t_ON, t_STG, and t_F.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-60 V - Maximum allowable collector-emitter voltage before breakdown; defines safe DC blocking capability in high-side switch configurations
I_C (DC)	-10 A - Continuous collector current rating; sets upper limit for steady-state load handling without thermal runaway
P_C (T_C=25°C)	50 W - Maximum power dissipation at case temperature 25°C; requires heatsink sizing based on thermal resistance R_θJC
V_CE(sat)	≤ -1 V @ -8 A / -0.4 A - Low saturation voltage ensures minimal conduction loss in switching applications
f_T	40 MHz - Current gain bandwidth product; supports audio-frequency amplification and moderate-speed switching
h_FE	35–60 @ V_CE = -1 V, I_C = -2 A - DC current gain range used for base drive calculation in linear and saturated operation
C_ob	230 pF @ V_CB = -10 V - Output capacitance affecting high-frequency switching losses and EMI generation

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Dimensions conform to JEDEC TO-220AB standard with 2.54 mm lead pitch and 15.90 mm body length.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Control electrode; requires current-limited drive to achieve specified h_FE and switching speed
2 (Center)	Collector	Main current-carrying terminal connected to heat sink via metal tab; electrically isolated in insulated-tab variant
3 (Right)	Emitter	Current return path; typically tied to higher potential in PNP high-side switch topologies

Key Features

Feature	Design Value
Low V_CE(sat)	≤ -1 V at -8 A enables <1 W conduction loss in 12 V/5 A load switching, reducing thermal stress
Fast switching	t_ON/t_F = 135 ns/100 ns supports PWM frequencies up to ~500 kHz with controlled rise/fall times
High SOA	Rated for 50 W at DC and 100 W pulsed (per SOA graph); suitable for inductive load commutation without snubbers
Complementary pair	Designed as PNP counterpart to KSE44H series, enabling matched push-pull amplifier and H-bridge designs

Applications

DC Motor Control	Linear Power Supply Regulator
Use Scenario: Driving brushed DC motors in industrial actuators requiring bidirectional control and stall current handling up to 8 A. IC Role / Device Role / Timing Role: High-side PNP switch in H-bridge half-bridge configuration, providing current sourcing during forward conduction. Use Value: V_CEO = -60 V withstands back-EMF spikes; low V_CE(sat) minimizes I²R heating during continuous 5–8 A operation.	Use Scenario: Pass element in adjustable linear regulators delivering up to 5 A at 5–24 V output with low dropout margin. IC Role / Device Role / Timing Role: Series pass transistor operating in active region, dissipating excess input-output voltage as heat. Use Value: 50 W P_C rating allows stable 5 A @ 10 V drop (50 W) with appropriate heatsinking; h_FE stability ensures predictable base drive requirements.
Switched-Mode Power Supply Output Stage	Audio Amplifier Driver
Use Scenario: Primary-side switching transistor in offline flyback converters rated for 60 W output with universal AC input. IC Role / Device Role / Timing Role: Hard-switched PNP switch turning on/off transformer primary winding at 65–100 kHz. Use Value: 40 MHz f_T and fast t_F support clean turn-off; SOA curve validates safe operation under reflected output overloads.	Use Scenario: Driver stage in Class AB audio amplifiers delivering 20–50 W into 4–8 Ω loads with low distortion. IC Role / Device Role / Timing Role: Complementary emitter-follower output device biased in linear region for voltage gain and current buffering. Use Value: Matched h_FE and V_CE(sat) with KSE44H enables symmetrical push-pull response; Cob = 230 pF limits high-frequency phase shift.

DC Motor Control

Linear Power Supply Regulator

Use Scenario: Driving brushed DC motors in industrial actuators requiring bidirectional control and stall current handling up to 8 A.

IC Role / Device Role / Timing Role: High-side PNP switch in H-bridge half-bridge configuration, providing current sourcing during forward conduction.

Use Value: V_CEO = -60 V withstands back-EMF spikes; low V_CE(sat) minimizes I²R heating during continuous 5–8 A operation.

Use Scenario: Pass element in adjustable linear regulators delivering up to 5 A at 5–24 V output with low dropout margin.

IC Role / Device Role / Timing Role: Series pass transistor operating in active region, dissipating excess input-output voltage as heat.

Use Value: 50 W P_C rating allows stable 5 A @ 10 V drop (50 W) with appropriate heatsinking; h_FE stability ensures predictable base drive requirements.

Switched-Mode Power Supply Output Stage

Audio Amplifier Driver

Use Scenario: Primary-side switching transistor in offline flyback converters rated for 60 W output with universal AC input.

IC Role / Device Role / Timing Role: Hard-switched PNP switch turning on/off transformer primary winding at 65–100 kHz.

Use Value: 40 MHz f_T and fast t_F support clean turn-off; SOA curve validates safe operation under reflected output overloads.

Use Scenario: Driver stage in Class AB audio amplifiers delivering 20–50 W into 4–8 Ω loads with low distortion.

IC Role / Device Role / Timing Role: Complementary emitter-follower output device biased in linear region for voltage gain and current buffering.

Use Value: Matched h_FE and V_CE(sat) with KSE44H enables symmetrical push-pull response; Cob = 230 pF limits high-frequency phase shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD45H11T4	V_CEO = -80 V, I_C = -8 A, TO-252 (DPAK) package, lower P_C (1.5 W @ T_A)	Suitable for surface-mount PCBs with lower power density; not interchangeable in through-hole TO-220 layouts	Select when board space is constrained and thermal management uses PCB copper; verify SOA fit for peak current demands
BD711	V_CEO = -100 V, I_C = -12 A, TO-126 package, higher V_CE(sat) (-1.5 V @ -8 A)	Better voltage headroom but higher conduction loss; different pinout (E-B-C vs B-C-E) and smaller package	Choose for higher-voltage isolation needs where -100 V rating is mandatory; redesign base drive due to h_FE variation and pin mismatch

Compared with MJD45H11T4 and BD711, the KSE45H8TU offers optimal balance of -60 V rating, -10 A current, TO-220 thermal performance, and proven SOA for industrial switching-making it preferred for through-hole, heatsink-mounted, medium-power linear and switching roles where layout and thermal interface are fixed.

Availability

KSE45H8TU is available at Aetrix Electronics and suitable for DC motor control, linear power supply regulation, and switched-mode power supply output stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for KSE45H8TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and consumer markets.

The KSE45H series belongs to ON Semiconductor's general-purpose power bipolar transistor portfolio, engineered for cost-effective, thermally robust switching and linear amplification in industrial power electronics where reliability under sustained current stress is critical.

FAQ

What is the maximum collector-emitter voltage rating for KSE45H8TU?

The KSE45H8TU has a maximum collector-emitter voltage (V_CEO) rating of -60 V at T_C = 25°C. This rating is confirmed in the Absolute Maximum Ratings table of the official ON Semiconductor datasheet for the KSE45H series. Exceeding this voltage risks avalanche breakdown and permanent device failure. Derating is required at elevated case temperatures per the published thermal curves.

Does KSE45H8TU have a built-in base-emitter resistor?

No, the KSE45H8TU is a standard three-terminal PNP bipolar junction transistor without any integrated base-emitter resistors. It requires external base drive circuitry-including current-limiting resistors-to establish proper bias conditions for linear or switching operation. This is consistent across all KSE45H variants and explicitly confirmed by the pinout diagram and electrical test conditions in the datasheet.

What is the thermal resistance from junction to case (R_θJC) for KSE45H8TU?

The junction-to-case thermal resistance (R_θJC) for KSE45H8TU is not explicitly listed in the provided datasheet, but the TO-220AB package used by KSE45H8TU has a typical R_θJC of 1.5°C/W, derived from industry-standard JEDEC measurements for insulated-tab TO-220 devices. This value is used to calculate heatsink requirements when dissipating up to the rated 50 W at T_C = 25°C.

Is KSE45H8TU pin-compatible with other KSE45H variants like KSE45H10TU?

Yes, all KSE45H-series transistors-including KSE45H8TU and KSE45H10TU-share identical TO-220 package outlines and pin assignments (Base–Collector–Emitter). However, they differ in absolute maximum ratings: KSE45H8TU is rated for -60 V V_CEO, while KSE45H10TU is rated for -80 V. Substitution is permissible only if the -60 V rating meets system voltage requirements; no PCB changes are needed due to identical mechanical and electrical pinout.

What is the safe operating area (SOA) limitation for KSE45H8TU at 100°C case temperature?

At T_C = 100°C, the KSE45H8TU's safe operating area is limited to approximately 25 W for DC operation, based on linear derating from 50 W at 25°C (derate by ~0.5 W/°C). This is confirmed by the "Power Derating" curve in the KSE45H series datasheet. Pulse operation extends the SOA envelope, but secondary breakdown must be avoided under inductive loads using appropriate snubbing or clamping.

KSE45H8TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 10 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 2A, 1V

Power - Max:: 1.67 W

Frequency - Transition:: 40MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

KSE45H8TU FAQ

1.How can I place an order for KSE45H8TU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSE45H8TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSE45H8TU reliable?

The price and inventory of KSE45H8TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSE45H8TU is usually 5 days.

3.What payment methods are accepted for KSE45H8TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSE45H8TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSE45H8TU?

KSE45H8TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSE45H8TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSE45H8TU?

For technical support, including KSE45H8TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSE45H8TU requirements.

6.How does Aetrix verify that KSE45H8TU is sourced from the original manufacturer or authorized distributors?

All KSE45H8TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSE45H8TU meets industry standards.

7.What is the process for return or replacement of KSE45H8TU?

All KSE45H8TU units undergo pre-shipment inspection (PSI). If there is an issue with KSE45H8TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSE45H8TU part is unused and in its original packaging.

Return procedure for KSE45H8TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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