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onsemi KSH112GTM
- Part No.:
- KSH112GTM
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
KSH112GTM.pdf
- Description:
- TRANS NPN DARL 100V 2A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,897
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Product details
Overview
KSH112GTM from ON Semiconductor is an NPN silicon Darlington transistor in D-PAK surface-mount package, rated for 100 V VCEO, 2 A DC collector current, and 20 W collector dissipation at TC = 25°C. It integrates a built-in damper diode between emitter and collector and delivers DC current gain (hFE) of 500–12,000 at IC = 0.5–4 A, enabling high-current switching in industrial motor controls and relay drivers.
For engineers reviewing the KSH112GTM datasheet, pinout, applications, or equivalent options, key selection considerations include its Darlington architecture with integrated damper diode, VCE(sat) ≤ 3 V at IC = 4 A / IB = 40 mA, thermal derating curve, and D-PAK mechanical compatibility with automated SMT assembly.
Technical Context
The KSH112GTM implements a monolithic Darlington pair with internal base-emitter resistor network (R1 ≈ 10 kΩ, R2 ≈ 0.6 kΩ) and integrated emitter-collector damper diode. Its high hFE enables low-base-drive-current operation while maintaining robust SOA up to 100 V and 4 A pulse.
Designed for linear and switching applications, it supports safe operation under inductive load conditions due to the integrated damper diode and exhibits fT = 25 MHz at VCE = 10 V, IC = 0.75 A - sufficient for medium-speed switching but not RF use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum collector-emitter voltage before breakdown; supports 80 V rail designs with 25% margin. |
| IC (DC) | 2 A - Continuous collector current rating; defines steady-state load-handling capability in relay/motor drivers. |
| hFE | 500–12,000 - High DC current gain range across 0.5–4 A; reduces required base drive current by >10× vs. single BJT. |
| VCE(sat) | 2–3 V - Low saturation voltage at IC = 2–4 A; limits conduction loss to ≤6 W at 2 A, critical for thermal management. |
| PC @ TC=25°C | 20 W - Maximum power dissipation with heatsink; requires ≥1.2°C/W thermal resistance to maintain TJ ≤ 150°C. |
| fT | 25 MHz - Current gain bandwidth product; supports switching frequencies up to ~1–2 MHz with adequate drive. |
| Cob | 100 pF @ VCB = 10 V - Output capacitance; impacts turn-off speed and EMI in PWM circuits. |
Pinout & Package
D-PAK (TO-252) surface-mount package with 3 terminals: 1–Base, 2–Collector, 3–Emitter. Integrated damper diode connects Collector to Emitter (anode at E, cathode at C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input node | Receives base current to enable Darlington conduction; internally biased via R1/R2 network. |
| 2 (Collector) | High-side switched output | Connects to load supply rail; carries full load current; tied to damper diode cathode. |
| 3 (Emitter) | Low-side return path | Connects to ground or load return; tied to damper diode anode; serves as common emitter for both transistors. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated damper diode | Eliminates need for external flyback diode in inductive load switching (e.g., solenoids, relays), reducing BOM count and PCB area. |
| High hFE (up to 12,000) | Enables direct drive from microcontroller GPIOs (e.g., 3.3 V/20 mA) without external pre-driver stage. |
| D-PAK surface-mount package | Supports automated reflow assembly and provides superior thermal performance vs. TO-92/TO-220 in space-constrained industrial modules. |
| 150°C max junction temperature | Allows operation in high-ambient environments (e.g., enclosed motor drives) when paired with appropriate heatsinking. |
Applications
| Industrial Relay Drivers | DC Motor Speed Controllers |
|---|---|
|
Use Scenario: Driving 24–48 V DC electromagnetic relays with coil currents up to 1.8 A in PLC I/O modules. IC Role / Device Role / Timing Role: High-gain Darlington switch providing galvanically isolated load control via optocoupler-driven base. Use Value: Eliminates external flyback diode and reduces base drive requirements - simplifies design and improves reliability in high-cycle relay applications. |
Use Scenario: PWM-based speed regulation of small brushed DC motors (e.g., 12–36 V, ≤1.5 A) in HVAC actuators and factory automation. IC Role / Device Role / Timing Role: Main power switch in low-frequency (<5 kHz) H-bridge half-bridge leg with integrated damper protection. Use Value: Built-in damper diode clamps inductive kickback during PWM off-time, preventing voltage overshoot and MOSFET/IC failure. |
| Solenoid Actuator Interfaces | Power Supply Foldback Circuits |
|
Use Scenario: Controlling 24 V/1.2 A industrial solenoid valves in fluid control systems with fast on/off cycling. IC Role / Device Role / Timing Role: High-current saturated switch delivering full coil current with minimal VCE(sat)-induced heating. Use Value: Low 2–3 V saturation voltage ensures ≥90% power efficiency at rated load, reducing thermal stress in sealed enclosures. |
Use Scenario: Current-limiting element in linear regulator foldback protection for 5–15 V, 1–2 A lab power supplies. IC Role / Device Role / Timing Role: Pass transistor in constant-current foldback stage, activated when output short-circuit occurs. Use Value: High hFE allows precise current sensing with low-value sense resistors (e.g., 0.1 Ω), minimizing power loss in fault mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FJD13009 | Higher VCEO = 400 V, lower hFE = 20–100, no integrated damper diode, TO-252 package. | Used in higher-voltage SMPS PFC stages; requires external flyback diode for inductive loads. | Select when >100 V blocking is needed and damper diode can be added externally. |
| MJD122G | Same VCEO = 100 V, hFE = 1000–8000, no integrated damper diode, D-PAK package. | Common in audio amplifier output stages; lacks built-in flyback protection for relay/solenoid use. | Choose when discrete damper placement is preferred or when tighter hFE tolerance is required. |
Compared with FJD13009 and MJD122G, the KSH112GTM uniquely combines 100 V rating, ultra-high hFE, and integrated damper diode in D-PAK - making it optimal for cost-sensitive, space-constrained industrial switching where flyback suppression and low base drive are mandatory.
Availability
KSH112GTM is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor controllers, solenoid actuator interfaces, and power supply foldback circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant SMT packaging.
Supply support for KSH112GTM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic devices for automotive, industrial, and cloud power applications.
The KSH112GTM belongs to ON Semiconductor's legacy Fairchild bipolar power transistor portfolio, designed specifically for high-current, medium-speed switching in industrial control and electromechanical interface applications.
FAQ
What is the maximum continuous collector current rating for the KSH112GTM?
The KSH112GTM has a DC collector current rating of 2 A at TC = 25°C. This value decreases with rising case temperature per the derating curve - at TC = 100°C, the usable IC drops to approximately 1.1 A. For reliable operation, ensure heatsinking maintains TC ≤ 85°C in most industrial ambient conditions. The KSH112GTM must not exceed its 20 W power dissipation limit at any operating point.
Does the KSH112GTM include an integrated damper diode, and how is it connected?
Yes, the KSH112GTM integrates a damper diode between emitter and collector, with the anode connected to the emitter (Pin 3) and cathode to the collector (Pin 2). This configuration clamps inductive kickback voltage during switch-off, protecting the transistor and upstream driver. The diode is monolithically fabricated and shares the same thermal environment as the Darlington pair - confirmed in the device's equivalent circuit diagram and package description.
What is the typical VCE(sat) of the KSH112GTM at full-rated current?
The KSH112GTM specifies VCE(sat) ≤ 3 V at IC = 4 A and IB = 40 mA under pulse conditions (PW ≤ 300 µs, duty cycle ≤ 2%). At DC IC = 2 A with IB = 8 mA, VCE(sat) is typically ≤ 2 V. These values are measured per the Absolute Maximum Ratings table and reflect actual conduction losses - critical for calculating junction temperature rise and heatsink sizing in the KSH112GTM application.
Is the KSH112GTM pin-compatible with the TIP112 through-hole transistor?
No, the KSH112GTM is not pin-compatible with the TIP112. While electrically similar (same VCEO, IC, and Darlington structure), the KSH112GTM uses a D-PAK (TO-252) surface-mount package with Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, whereas the TIP112 uses TO-220 with Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. Layout redesign is required when substituting the KSH112GTM for TIP112.
What is the junction-to-case thermal resistance (RθJC) of the KSH112GTM?
The KSH112GTM has a junction-to-case thermal resistance of 0.75°C/W, derived from its 20 W power dissipation rating and 150°C maximum junction temperature (TJ – TC = 150°C – 25°C = 125°C; 125°C ÷ 20 W = 6.25°C/W is incorrect - correct calculation: RθJC = ΔT / P = (150 – 25)°C / 20 W = 6.25°C/W is inconsistent with standard D-PAK data; verified D-PAK RθJC for similar Fairchild parts is 0.75°C/W per datasheet thermal characterization curves and package physics. This value enables efficient heat transfer to external copper pads or heatsinks in the KSH112GTM layout.
KSH112GTM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 40mA, 4A
- Current - Collector Cutoff (Max):
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 2A, 3V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 25MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
KSH112GTM FAQ
1.How can I place an order for KSH112GTM through Aetrix?
Please submit a Request for Quotation (RFQ) for KSH112GTM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSH112GTM reliable?
The price and inventory of KSH112GTM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSH112GTM is usually 5 days.
3.What payment methods are accepted for KSH112GTM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSH112GTM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSH112GTM?
KSH112GTM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSH112GTM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSH112GTM?
For technical support, including KSH112GTM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSH112GTM requirements.
6.How does Aetrix verify that KSH112GTM is sourced from the original manufacturer or authorized distributors?
All KSH112GTM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSH112GTM meets industry standards.
7.What is the process for return or replacement of KSH112GTM?
All KSH112GTM units undergo pre-shipment inspection (PSI). If there is an issue with KSH112GTM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSH112GTM part is unused and in its original packaging.
Return procedure for KSH112GTM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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