My Inquiry
My Account
onsemi KSH112GTM_NB82051
, SC-63.JPG)
- Part No.:
- KSH112GTM_NB82051
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
KSH112GTM_NB82051.pdf
- Description:
- TRANS NPN DARL 100V 2A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,989
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
KSH112GTM_NB82051 from ON Semiconductor is an NPN silicon Darlington transistor in D-PAK surface-mount package, rated for 100 V VCEO, 2 A DC collector current, and 20 W collector dissipation at TC = 25°C. It integrates a built-in damper diode between collector and emitter and delivers DC current gain (hFE) of 500–12000 at IC = 0.5–4 A, enabling high-gain switching in industrial relay drivers and motor control circuits.
For engineers reviewing the KSH112GTM_NB82051 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V blocking capability, 2 A continuous current rating, integrated damper diode, D-PAK thermal performance, and electrical similarity to TIP112 for legacy design migration.
Technical Context
This Darlington transistor uses monolithic dual-NPN structure with internal base-emitter resistors (R1 ≈ 10 kΩ, R2 ≈ 0.6 kΩ) to ensure stable biasing and reduce external component count. Its built-in collector-emitter damper diode suppresses inductive kickback without requiring discrete flyback protection.
Designed for medium-power linear and switching applications, it operates with VBE(sat) = 4 V and VCE(sat) = 2–3 V across IC = 2–4 A, supporting robust saturation under high-current drive. The fT = 25 MHz and Cob = 100 pF indicate suitability for low-to-moderate frequency switching up to ~100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Sustains 100 V collector-emitter voltage before breakdown, suitable for 24–48 V industrial bus switching. |
| IC (DC) | 2 A - Continuous collector current rating defines maximum steady-state load drive capability. |
| PC @ TC=25°C | 20 W - Thermal power limit at case temperature 25°C; requires heatsinking above ~1.75 W at ambient. |
| hFE | 500–12,000 - High DC current gain enables microampere-level base drive for 2–4 A loads. |
| VCE(sat) | 2–3 V - Low saturation voltage minimizes conduction loss in switching applications. |
| fT | 25 MHz - Current gain bandwidth supports switching frequencies up to ~100 kHz with margin. |
| Cob | 100 pF - Output capacitance impacts turn-off speed and EMI in inductive switching. |
Pinout & Package
D-PAK (TO-252) surface-mount package with exposed drain pad for thermal enhancement; dimensions: 9.50 × 6.10 × 2.70 mm (L × W × H), lead pitch 5.34 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to activate Darlington pair; internal R1/R2 network provides self-bias stability. |
| 2 (Collector) | High-side power output | Connected to load supply rail; integrated damper diode anode tied to this pin. |
| 3 (Emitter) | Power return path | Common emitter node; damper diode cathode connected here, enabling bidirectional clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated damper diode | Eliminates need for external flyback diode in relay/inductor driver designs, reducing BOM count and PCB area. |
| D-PAK surface-mount package | Enables automated assembly and superior thermal transfer vs. through-hole TO-220; exposed pad improves θJC. |
| High hFE range (500–12k) | Allows direct drive from microcontroller GPIOs or low-current logic outputs without additional pre-driver stages. |
| VCEO(sus) = 100 V | Supports operation across 24 V, 36 V, and 48 V industrial control buses with safety margin against transients. |
| Electrically similar to TIP112 | Facilitates drop-in replacement in legacy through-hole designs when used with adapter or re-layout for D-PAK footprint. |
Applications
| Industrial Relay Drivers | DC Motor Control |
|---|---|
|
Use Scenario: Driving 24 V/48 V electromagnetic relays in PLC output modules and industrial I/O cards. IC Role / Device Role / Timing Role: High-gain switch amplifying logic-level signals to energize relay coils with inductive energy storage. Use Value: Integrated damper diode clamps coil back-EMF, preventing gate driver damage and eliminating discrete diode placement. |
Use Scenario: Controlling direction and enable of small brushed DC motors (≤100 W) in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge half-bridge configurations or single-direction PWM drive stages. Use Value: 2 A continuous current and 20 W thermal rating support sustained 100% duty-cycle operation with minimal heatsink. |
| Solenoid Actuators | Power Supply Sequencing |
|
Use Scenario: Energizing 12–48 V solenoids in valve control systems for fluid handling and HVAC equipment. IC Role / Device Role / Timing Role: High-current switch delivering pulsed or latched current to solenoid windings with fast turn-on/turn-off. Use Value: VCE(sat) ≤ 3 V at 4 A reduces power loss during hold phase, improving system efficiency and thermal margin. |
Use Scenario: Enabling/disabling secondary power rails (e.g., 5 V, 3.3 V) in multi-rail industrial power supplies. IC Role / Device Role / Timing Role: Precision-controlled pass element for sequencing logic, coordinated via microcontroller GPIO timing. Use Value: High hFE ensures reliable turn-on with <50 mA base drive, compatible with standard logic families. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MJD112G | Same die, TO-252-3 (D-PAK) package, identical VCEO/IC/hFE; no damper diode. | Requires external flyback diode in inductive load applications; lower BOM integration. | Select when damper diode is unnecessary or already present on PCB; preferred for cost-sensitive non-inductive loads. |
| STMicroelectronics BD679A | TO-126 package, 80 V VCEO, 4 A IC, no integrated damper diode, hFE = 750–5000. | Lower voltage rating limits use to ≤24 V systems; through-hole mounting only. | Choose for legacy through-hole designs where board space allows and voltage requirements are ≤24 V. |
Compared with MJD112G and BD679A, KSH112GTM_NB82051 uniquely combines D-PAK surface-mount compatibility, 100 V blocking, and integrated damper diode-enabling compact, robust, and BOM-optimized inductive switching without layout compromise.
Availability
KSH112GTM_NB82051 is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor control, solenoid actuation, and power supply sequencing requiring stable component supply and long-term manufacturability.
Supply support for KSH112GTM_NB82051 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, cloud, and IoT applications.
KSH112GTM_NB82051 belongs to ON Semiconductor's legacy Fairchild Darlington transistor product line, engineered for high-current, medium-voltage switching in rugged industrial control environments.
FAQ
What is the pin configuration of the KSH112GTM_NB82051?
The KSH112GTM_NB82051 uses a 3-pin D-PAK (TO-252) package with pin 1 = Base, pin 2 = Collector, pin 3 = Emitter. The exposed pad is electrically connected to the collector and must be thermally anchored to a copper pour for optimal heat dissipation. This pinout matches industry-standard D-PAK layouts and is confirmed in the official ON Semiconductor datasheet Rev. A4.
Does the KSH112GTM_NB82051 include a built-in damper diode?
Yes, the KSH112GTM_NB82051 integrates a damper diode between collector and emitter, with the anode connected to the collector (pin 2) and cathode to the emitter (pin 3). This eliminates the need for an external flyback diode in relay, solenoid, or inductive load applications, as verified in the device's equivalent circuit diagram and Absolute Maximum Ratings section.
What is the maximum continuous collector current rating for the KSH112GTM_NB82051?
The KSH112GTM_NB82051 has a maximum DC collector current (IC) rating of 2 A at TC = 25°C. At higher case temperatures, derating applies per the Power Derating curve: power dissipation drops linearly to zero at 150°C junction temperature. Pulse current capability reaches 4 A under specified test conditions (PW ≤ 300 µs, duty cycle ≤ 2%).
How does the KSH112GTM_NB82051 compare to the TIP112 in terms of electrical performance?
The KSH112GTM_NB82051 is electrically similar to the TIP112, sharing identical VCEO = 100 V, VCE(sat) ≈ 2–3 V, and hFE range. However, KSH112GTM_NB82051 uses D-PAK packaging versus TIP112's TO-220, offering better thermal resistance in surface-mount assemblies and eliminating through-hole assembly steps.
What is the junction-to-case thermal resistance (θJC) of the KSH112GTM_NB82051?
The KSH112GTM_NB82051 has a typical junction-to-case thermal resistance (θJC) of 1.25°C/W when mounted on a 1-inch² copper pad with 2 oz. copper thickness, as derived from its 20 W PC rating and 25°C TC condition. This value assumes full solder coverage of the exposed collector pad and is validated in ON Semiconductor's thermal characterization data for D-PAK devices.
KSH112GTM_NB82051 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 40mA, 4A
- Current - Collector Cutoff (Max):
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 2A, 3V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 25MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
KSH112GTM_NB82051 FAQ
1.How can I place an order for KSH112GTM_NB82051 through Aetrix?
Please submit a Request for Quotation (RFQ) for KSH112GTM_NB82051 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSH112GTM_NB82051 reliable?
The price and inventory of KSH112GTM_NB82051 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSH112GTM_NB82051 is usually 5 days.
3.What payment methods are accepted for KSH112GTM_NB82051?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSH112GTM_NB82051 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSH112GTM_NB82051?
KSH112GTM_NB82051 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSH112GTM_NB82051 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSH112GTM_NB82051?
For technical support, including KSH112GTM_NB82051 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSH112GTM_NB82051 requirements.
6.How does Aetrix verify that KSH112GTM_NB82051 is sourced from the original manufacturer or authorized distributors?
All KSH112GTM_NB82051 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSH112GTM_NB82051 meets industry standards.
7.What is the process for return or replacement of KSH112GTM_NB82051?
All KSH112GTM_NB82051 units undergo pre-shipment inspection (PSI). If there is an issue with KSH112GTM_NB82051, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSH112GTM_NB82051 part is unused and in its original packaging.
Return procedure for KSH112GTM_NB82051:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
KSH112GTM_NB82051 Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
