onsemi KSH112GTM_SB82051

Overview

KSH112GTM_SB82051 from ON Semiconductor is an NPN silicon Darlington transistor in D-PAK surface-mount package, rated for 100 V V_CEO, 2 A DC collector current, and 20 W collector dissipation at T_C = 25°C, with built-in emitter-collector damper diode and DC current gain (h_FE) of 500–12,000 at I_C = 0.5–4 A - used in high-current switching applications such as relay drivers and motor controls.

For engineers reviewing the KSH112GTM_SB82051 datasheet, pinout, applications, or equivalent options, key selection considerations include its Darlington configuration enabling high current gain with low base drive, integrated damper diode eliminating external snubbing, and D-PAK thermal performance suitable for industrial power switching without forced cooling.

Technical Context

This device implements a monolithic NPN Darlington pair with internal base-emitter resistors (R1 ≈ 10 kΩ, R2 ≈ 0.6 kΩ) and an integrated emitter-to-collector damper diode. It operates as a single-stage high-gain switch with no external biasing required.

Its electrical behavior is defined by V_CE(sat) ≤ 3 V at I_C = 4 A / I_B = 40 mA, V_BE(sat) ≈ 4 V, and f_T = 25 MHz at V_CE = 10 V / I_C = 0.75 A - indicating suitability for medium-speed switching up to ~100 kHz with minimal drive overhead.

Key Specifications

Pinout & Package

D-PAK (TO-252) surface-mount package with standard 3-pin layout: 1 = Base, 2 = Collector, 3 = Emitter; thermally enhanced plastic body with exposed drain pad for PCB copper thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with FJD13009 and MJD122, the KSH112GTM_SB82051 provides higher DC current gain, integrated damper functionality, and verified 2 A continuous capability - making it optimal for compact, high-reliability relay and solenoid drivers where BOM reduction and transient immunity are critical.

Availability

KSH112GTM_SB82051 is available at Aetrix Electronics and suitable for industrial motor control, relay interface modules, and solenoid actuation systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for KSH112GTM_SB82051 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The KSH112GTM_SB82051 belongs to ON Semiconductor's legacy Fairchild power transistor portfolio, designed specifically for high-current, low-speed switching in industrial control and electromechanical interface applications.

FAQ

What is the maximum continuous collector current rating for KSH112GTM_SB82051?

The KSH112GTM_SB82051 is rated for 2 A DC collector current at T_C = 25°C. Derating applies above 25°C case temperature - e.g., 1.5 A at T_C = 75°C per the power derating curve. Pulse current up to 4 A is allowed under specified duty cycle and pulse width limits (PW ≤ 300 µs, duty ≤ 2%). The KSH112GTM_SB82051 must be mounted on adequate PCB copper area to maintain safe junction temperature.

Does KSH112GTM_SB82051 include an integrated damper diode, and how is it connected?

Yes, the KSH112GTM_SB82051 integrates a damper diode between emitter and collector, with cathode at emitter and anode at collector. This configuration clamps inductive kickback during turn-off, protecting the transistor without external components. The diode is monolithically fabricated and shares the same thermal environment as the Darlington pair - confirmed in the device's equivalent circuit diagram and package description.

What is the typical DC current gain (h_FE) of KSH112GTM_SB82051 across its operating range?

The KSH112GTM_SB82051 exhibits h_FE = 500 (min) at I_C = 0.5 A, 1000 (min) at I_C = 2 A, and 200 (min) at I_C = 4 A - with typical values reaching up to 12,000 at low currents. These values are measured at V_CE = 3 V and reflect the Darlington structure's high gain, enabling microcontroller-level base drive. The KSH112GTM_SB82051 datasheet specifies these minima under standardized test conditions.

Can KSH112GTM_SB82051 replace TIP112 in existing designs?

The KSH112GTM_SB82051 is electrically similar to TIP112 but differs in package (D-PAK vs. TO-220) and includes an integrated damper diode - TIP112 does not. Pinout is identical (B-C-E), but PCB layout must accommodate surface-mount D-PAK dimensions and thermal pad. The KSH112GTM_SB82051 offers improved thermal resistance in SMT assemblies and eliminates the need for an external flyback diode, making it a functional upgrade - not a drop-in replacement - unless board redesign is performed.

What is the safe operating area (SOA) limit for KSH112GTM_SB82051 at DC operation?

The KSH112GTM_SB82051 SOA for DC operation is bounded by V_CE ≤ 100 V and I_C ≤ 2 A at T_C = 25°C, with linear derating to zero current at T_C = 150°C. The device's SOA curve (Figure 6) confirms stability under simultaneous high voltage and current stress - critical for relay and solenoid driving. The KSH112GTM_SB82051 must remain within this boundary to avoid second breakdown, especially during slow turn-off events.