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onsemi KSH112ITU
- Part No.:
- KSH112ITU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
KSH112ITU.pdf
- Description:
- TRANS NPN DARL 100V 2A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,500
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Product details
Overview
KSH112ITU from ON Semiconductor is an NPN silicon Darlington transistor in D-PAK surface-mount package, rated for 100 V VCEO, 2 A DC collector current, and 20 W collector dissipation at TC = 25°C. It integrates a built-in damper diode between collector and emitter and delivers high DC current gain (hFE = 500–12,000) for robust switching in relay drivers and motor control circuits.
For engineers reviewing the KSH112ITU datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture with integrated clamp diode, VCE(sat) ≤ 3 V at 4 A, 150°C junction rating, and D-PAK thermal performance-critical for industrial solenoid and lamp load switching designs.
Technical Context
The KSH112ITU implements a monolithic Darlington pair with internal base-emitter resistor network (R1 ≈ 10 kΩ, R2 ≈ 0.6 kΩ) and an integrated collector-to-emitter damper diode. Its high hFE enables low-base-drive operation while maintaining fast turn-on (tD < 10 µs) and controlled turn-off (tF < 100 µs) under 250× IB drive conditions.
Designed for surface-mount use in high-current linear and switching applications, it operates with VBE(on) = 2.8 V at IC = 2 A and exhibits fT = 25 MHz at VCE = 10 V, IC = 0.75 A-supporting moderate-frequency switching up to ~100 kHz in non-resonant loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum safe collector-emitter voltage before breakdown; supports 48 V and 72 V industrial bus systems with margin. |
| IC (DC) | 2 A - Continuous collector current capability; suitable for driving 1–2 A solenoids or small DC motors without heatsinking below 75°C case temp. |
| hFE | 500–12,000 - High DC current gain range across operating points; reduces required base drive current to ≤8 mA at IC = 2 A. |
| VCE(sat) | 2–3 V - Low saturation voltage at rated current; limits power loss to ≤6 W at 2 A, easing thermal design in compact layouts. |
| PC @ TC=25°C | 20 W - Maximum power dissipation with adequate heatsinking; enables high-duty-cycle operation in thermally managed PCBs. |
| fT | 25 MHz - Current gain bandwidth product; confirms usable switching up to ~100 kHz with stable gain in driver stages. |
| Cob | 100 pF - Output capacitance at VCB = 10 V; contributes to switching speed limitation and EMI filtering requirements. |
Pinout & Package
D-PAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-terminal configuration optimized for automated assembly and board-level heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input node | Receives low-current drive signal; internal R1/R2 network provides bias stabilization and eliminates external base resistors in many applications. |
| 2 (Collector) | High-side switched output | Connected to load supply rail; integrated damper diode cathode ties here-enables inductive kickback clamping without external components. |
| 3 (Emitter) | Current return path | Common reference for load and driver; tied to ground or low-side switch; forms emitter-follower output stage with inherent current sensing capability. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated damper diode | Clamps inductive flyback voltage across collector-emitter without external diode-reduces BOM count and layout area in relay/solenoid drivers. |
| Monolithic Darlington structure | Delivers hFE ≥ 500 at IC = 0.5 A, enabling microcontroller GPIO direct drive with no external pre-driver stage. |
| D-PAK thermal performance | RθJC ≈ 1.25°C/W (typical); supports 20 W dissipation with minimal heatsink-ideal for space-constrained industrial control modules. |
| High VCEO rating | 100 V withstand capability allows use in 48 V automotive body electronics and 72 V industrial battery systems with safety margin. |
| Lead-formed SMT footprint | Standard D-PAK land pattern compatibility; supports reflow soldering and automated optical inspection without lead bending or trimming. |
Applications
| Industrial Relay Drivers | DC Motor Start/Stop Control |
|---|---|
|
Use Scenario: Driving 24–48 V DC coil relays in PLC I/O modules and factory automation panels. IC Role / Device Role / Timing Role: High-gain Darlington switch providing isolated load control with integrated flyback protection. Use Value: Eliminates need for external freewheeling diode and base resistor network-reducing component count by ≥3 parts per channel. |
Use Scenario: Controlling bidirectional 12–36 V brushed DC motors in conveyor systems and valve actuators. IC Role / Device Role / Timing Role: Unidirectional high-side switch in H-bridge half-bridge sections or simple on/off motor enable paths. Use Value: VCE(sat) ≤ 3 V at 2 A ensures ≤6 W conduction loss-minimizing thermal stress during frequent start-stop cycles. |
| Lamp Load Switching | Solenoid Actuation Circuits |
|
Use Scenario: Switching incandescent and halogen lamps in building lighting control and signage systems. IC Role / Device Role / Timing Role: Inrush-tolerant power switch handling 5–10× cold-filament surge currents. Use Value: ICP = 4 A pulse rating accommodates 8 A peak inrush for 100 W lamps-preventing false tripping during cold start. |
Use Scenario: Energizing 24–72 V DC solenoids in pneumatic/hydraulic valves and locking mechanisms. IC Role / Device Role / Timing Role: High-current, thermally robust switch with integrated clamp for inductive energy recirculation. Use Value: Built-in damper diode sustains 100 V reverse recovery-enabling reliable 100 ms duty cycle operation without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MJD112G | Same D-PAK package, identical pinout, but no integrated damper diode; hFE min = 1000 at IC = 2 A. | Requires external flyback diode for inductive loads; better suited for linear amplification where diode clamping is undesirable. | Select when discrete diode placement is preferred or when higher minimum hFE is needed for tighter gain tolerance. |
| STMicroelectronics BD679A | TO-126 through-hole package; VCEO = 80 V; hFE = 750–5000; no integrated diode; lower PC = 15 W. | Not surface-mount compatible; requires PCB through-hole routing and manual assembly; limited to lower-power or legacy designs. | Choose only for through-hole prototyping or replacement in existing TO-126-based boards where D-PAK rework is impractical. |
Compared with MJD112G and BD679A, the KSH112ITU uniquely combines D-PAK SMT compatibility, integrated damper diode, and 100 V rating-making it the only option among the three that eliminates external clamping components while supporting modern automated manufacturing and higher bus voltages.
Availability
KSH112ITU is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor control circuits, lamp load switching, and solenoid actuation requiring stable component supply and long-term production continuity.
Supply support for KSH112ITU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and consumer markets.
The KSH112ITU belongs to ON Semiconductor's legacy Fairchild Darlington transistor family, engineered specifically for high-reliability industrial switching applications where integrated protection, high gain, and thermal robustness are essential.
FAQ
What is the maximum continuous collector current rating for the KSH112ITU?
The KSH112ITU is rated for 2 A DC collector current at TC = 25°C. Derating applies above 25°C case temperature per the power derating curve in the datasheet-e.g., at TC = 100°C, maximum IC drops to approximately 1.2 A. This rating assumes proper PCB copper pour and thermal vias for heat extraction from the D-PAK exposed pad.
Does the KSH112ITU include an integrated damper diode, and how is it connected?
Yes, the KSH112ITU includes a monolithically integrated damper diode connected between collector and emitter, with cathode at the collector terminal (Pin 2) and anode at the emitter terminal (Pin 3). This configuration provides automatic clamping of inductive flyback voltage during turn-off-eliminating the need for an external freewheeling diode in relay, solenoid, and motor applications.
What is the typical DC current gain (hFE) of the KSH112ITU at 2 A collector current?
At VCE = 3 V and IC = 2 A, the KSH112ITU exhibits hFE ≥ 1000 (minimum) and up to 12,000 (maximum), per the datasheet's electrical characteristics table. This wide gain range reflects process variation but ensures sufficient drive margin for microcontroller GPIO interfacing without external base current limiting.
Can the KSH112ITU be used as a direct replacement for the TIP112 in existing designs?
The KSH112ITU is electrically similar to the TIP112 but not a drop-in replacement due to differing packages: TIP112 uses TO-220, while KSH112ITU uses D-PAK. Pinout order (Base–Collector–Emitter) matches, but mechanical mounting, thermal path, and PCB footprint differ. A redesign is required for SMT implementation, though circuit functionality remains compatible.
What is the safe operating area (SOA) limit for the KSH112ITU at 100°C case temperature?
Per the SOA curve in the KSH112ITU datasheet, at TC = 100°C, the device supports up to 1.5 A at 50 V VCE in DC operation, or 2 A at 30 V, with pulse conditions extending further. Operation must remain within the bounded SOA envelope to avoid second breakdown-especially critical in inductive switching with slow turn-off or high VCE × IC products.
KSH112ITU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 40mA, 4A
- Current - Collector Cutoff (Max):
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 2A, 3V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 25MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
KSH112ITU FAQ
1.How can I place an order for KSH112ITU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSH112ITU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSH112ITU reliable?
The price and inventory of KSH112ITU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSH112ITU is usually 5 days.
3.What payment methods are accepted for KSH112ITU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSH112ITU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSH112ITU?
KSH112ITU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSH112ITU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSH112ITU?
For technical support, including KSH112ITU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSH112ITU requirements.
6.How does Aetrix verify that KSH112ITU is sourced from the original manufacturer or authorized distributors?
All KSH112ITU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSH112ITU meets industry standards.
7.What is the process for return or replacement of KSH112ITU?
All KSH112ITU units undergo pre-shipment inspection (PSI). If there is an issue with KSH112ITU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSH112ITU part is unused and in its original packaging.
Return procedure for KSH112ITU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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