onsemi KSH210TF

Overview

KSH210TF from ON Semiconductor is a PNP epitaxial silicon power transistor in D-PAK package, rated for -25 V V_CEO, -5 A continuous collector current, and 12.5 W collector dissipation at T_C = 25°C, with DC current gain (h_FE) of 70–180 at I_C = -500 mA to -5 A; used in high-current linear and switching applications such as DC motor control and power supply regulation.

For engineers reviewing the KSH210TF datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, D-PAK thermal performance, low V_CE(sat) down to -0.3 V at I_C = -500 mA / I_B = -50 mA, f_T = 65 MHz bandwidth, and safe operating area validated up to 5 A/30 V.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for surface-mount linear amplification and hard-switching duty. Its design supports stable DC biasing across wide temperature ranges (T_J = -65°C to +150°C) and includes built-in thermal derating curves for case temperatures up to 150°C.

Electrical behavior is defined by three distinct h_FE regions: 70 min at V_CE = -1 V / I_C = -500 mA, 45 min at V_CE = -1 V / I_C = -2 A, and 10 min at V_CE = -2 V / I_C = -5 A - reflecting progressive gain compression under high-current saturation, consistent with its intended use in regulated power stages.

Key Specifications

Pinout & Package

D-PAK (TO-252) surface-mount package with exposed drain pad thermally connected to collector; standardized 3-pin layout optimized for PCB thermal relief and mechanical stability in high-current routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD2955G and PN2907A, the KSH210TF offers optimal balance of voltage margin, current capacity, and gain linearity for 25 V/5 A industrial switching - delivering lower conduction loss than MJD2955G at mid-load and significantly higher thermal capability than PN2907A.

Availability

KSH210TF is available at Aetrix Electronics and suitable for DC motor control, linear voltage regulation, switch-mode power supply, and overcurrent protection applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for KSH210TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSH210TF belongs to ON Semiconductor's legacy Fairchild PNP power transistor family, engineered for ruggedized surface-mount switching and linear regulation in industrial power systems where reliability and thermal performance are critical.

FAQ

What is the maximum continuous collector current rating for the KSH210TF?

The KSH210TF has a maximum continuous collector current (I_C) rating of -5 A at case temperature T_C = 25°C. This rating decreases with rising case temperature per the published derating curve, reaching zero at T_C = 150°C. For sustained operation above 75°C, heatsinking must be applied to maintain safe junction temperature. The KSH210TF must be operated within this limit to avoid thermal runaway or permanent damage.

Does the KSH210TF have a documented safe operating area (SOA)?

Yes, the KSH210TF includes a published Safe Operating Area (SOA) graph in its datasheet (Figure 6), covering DC, 10 ms, 1 ms, 500 µs, and 100 µs pulse widths up to 5 A and 30 V. The SOA confirms second-breakdown immunity under specified conditions and validates its suitability for repetitive switching and linear regulation. Engineers must reference this SOA when designing for transient loads or unclamped inductive switching to ensure the KSH210TF remains within its operational boundaries.

What is the typical V_CE(sat) of the KSH210TF at full rated current?

The KSH210TF exhibits a typical V_CE(sat) of -1.8 V at I_C = -5 A and I_B = -1 A, as specified in the Electrical Characteristics table. This value reflects worst-case saturation voltage under full-rated conduction and directly determines power loss (P = I_C × V_CE(sat)) and thermal load. At lower currents (e.g., -500 mA), V_CE(sat) drops to -0.3 V, enabling efficient operation across its full current range. The KSH210TF's saturation voltage is confirmed across multiple test conditions and is integral to its thermal design.

Is the KSH210TF compatible with lead-free reflow soldering processes?

Yes, the KSH210TF in D-PAK package is qualified for lead-free reflow soldering per J-STD-020 requirements, with a peak reflow temperature of 260°C for up to 30 seconds. Its package construction and internal metallization support standard Pb-free assembly without delamination or bond wire failure. The KSH210TF's thermal profile compliance is documented in ON Semiconductor's packaging reliability reports and aligns with IPC-A-610 Class 2/3 standards for industrial applications.

What is the base-emitter on voltage (V_BE(on)) specification for the KSH210TF?

The KSH210TF has a typical V_BE(on) of -1.6 V at V_CE = -1 V and I_C = -2 A, as stated in the Electrical Characteristics table. This parameter defines the forward-bias voltage required across the base-emitter junction to achieve specified collector current under active-region operation. It is essential for calculating base resistor values in fixed-bias configurations and influences driver stage power consumption. The KSH210TF's V_BE(on) remains stable across its operating temperature range and supports predictable bias network design.