Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSH210TM

Part No.:
KSH210TM
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixKSH210TM.pdf
Description:
TRANS PNP 25V 5A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,164

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSH210TM from Fairchild Semiconductor is a PNP epitaxial silicon power transistor in D-PAK surface-mount package, rated for -25 V VCEO, -5 A continuous collector current, 12.5 W collector dissipation at TC = 25°C, and DC current gain (hFE) of 70–180 at IC = -500 mA, used in high-current linear regulation and switching circuits in industrial motor drives.

For engineers reviewing the KSH210TM datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed -5 A DC rating, validated D-PAK thermal performance, and documented VCE(sat) ≤ -0.75 V at IC = -2 A / IB = -200 mA for low-loss switching operation.

Technical Context

The KSH210TM operates as a medium-power PNP bipolar junction transistor with epitaxial base construction enabling stable hFE across collector currents from -50 mA to -5 A. Its safe operating area (SOA) is defined up to 5 ms pulse width with VCC = -30 V and IC = 10IB, supporting robust transient handling in inductive load switching.

Thermal derating begins at TC = 25°C, with linear reduction to zero dissipation at TC = 175°C. Output capacitance (Cob) is 120 pF at VCB = -10 V, f = 0.1 MHz, supporting predictable turn-off timing in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO-25 V - Maximum sustainable collector-emitter voltage under open-base condition; defines breakdown margin in switching applications.
IC (DC)-5 A - Continuous collector current rating at TC = 25°C; sets maximum steady-state load current capability.
PC (TC = 25°C)12.5 W - Maximum power dissipation with case temperature held at 25°C; determines heatsink sizing baseline.
hFE70–180 - DC current gain range at VCE = -1 V; enables predictable base drive design across operating points.
VCE(sat)-0.75 V @ IC = -2 A, IB = -200 mA - Low saturation voltage ensures <1.5 W conduction loss at rated current.
fT65 MHz - Current gain bandwidth product at VCE = -10 V, IC = -100 mA; supports moderate-frequency switching up to ~5–10 MHz.
Cob120 pF @ VCB = -10 V - Output junction capacitance; directly impacts turn-off energy and snubber design.

Pinout & Package

D-PAK (TO-252) surface-mount package with exposed drain pad for thermal enhancement; dimensions: 9.50 × 6.10 × 2.70 mm (L × W × H), lead pitch 5.34 mm.

Pin/TerminalCircuit RoleDesign Meaning
1 - BaseControl electrodeReceives negative base current to enable conduction; requires current-limited drive due to IB max = -1 A rating.
2 - CollectorHigh-side current pathConnected to positive rail in PNP high-side switch configuration; electrically tied to exposed thermal pad.
3 - EmitterReference terminalTypically connected to load supply rail; serves as common return for base drive and collector current.

Key Features

FeatureDesign Value
High DC current gainhFE ≥ 70 at IC = -500 mA - Reduces required base drive power and simplifies driver stage design.
Low VCE(sat)-0.75 V @ IC = -2 A - Limits conduction loss to ≤1.5 W, improving thermal efficiency in linear and saturated operation.
D-PAK thermal performance12.5 W PC at TC = 25°C - Enables compact PCB layout with minimal heatsinking for ≤5 A loads.
Surface-mount compatibilityLead-formed D-PAK footprint - Supports automated reflow assembly without lead bending; no through-hole requirement.

Applications

Motor Control Driver StageIndustrial DC Power Switch

Use Scenario: Driving gate of N-channel MOSFET in half-bridge high-side configuration for 24 V DC motor control.

IC Role / Device Role / Timing Role: PNP switch providing level-shifted, current-amplified gate pull-up signal.

Use Value: VCE(sat) ≤ -0.75 V ensures fast MOSFET turn-on with minimal voltage drop across KSH210TM during active state.

Use Scenario: High-side switch controlling 12–24 V DC loads (e.g., solenoids, relays) in programmable logic controllers.

IC Role / Device Role / Timing Role: Medium-power PNP pass element delivering up to -5 A load current with controlled saturation.

Use Value: Confirmed 12.5 W dissipation at TC = 25°C allows sustained operation without forced air cooling in enclosed enclosures.

Linear Regulator Pass ElementOvercurrent Protection Circuit

Use Scenario: Series pass transistor in adjustable 3–15 V, 3 A linear regulator for analog sensor subsystems.

IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by varying VBE bias.

Use Value: hFE stability across IC = -500 mA to -2 A ensures consistent loop gain and load regulation accuracy.

Use Scenario: Current-sensing switch in foldback protection circuit that disables output when load exceeds 4.5 A.

IC Role / Device Role / Timing Role: Fast-turnoff PNP comparator output stage triggering shutdown latch.

Use Value: 65 MHz fT and documented turn-off time <100 ns support reliable response to overcurrent transients within 1 µs window.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD2955GVCEO = -60 V, IC = -10 A, PC = 15 W, hFE min = 20 @ IC = -4 A - higher voltage/current ratings but lower gain consistency.Supports higher bus voltages (≤60 V) and heavier loads; less suitable for precision gain-dependent linear regulation.Select MJD2955G when system requires >25 V headroom or >5 A peak current; verify SOA compliance at elevated TC.
PN2907AVCEO = -60 V, IC = -600 mA, PC = 625 mW, hFE min = 100 - much lower power, TO-92 packaged, not surface-mount.Limited to low-power signal switching or biasing; incompatible with >1 A load or automated SMT assembly.Choose PN2907A only for prototyping or low-current auxiliary functions; not a functional replacement for KSH210TM's power handling.

Compared with MJD2955G and PN2907A, the KSH210TM uniquely balances -5 A DC current, -25 V rating, D-PAK mountability, and hFE ≥70 at mid-current - making it optimal for space-constrained industrial switching where thermal density and gain predictability matter more than extreme voltage margin or ultra-low cost.

Availability

KSH210TM is available at Aetrix Electronics and suitable for industrial motor control, programmable logic controller (PLC) output stages, and analog power regulation requiring stable component supply and long-term manufacturability.

Supply support for KSH210TM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The KSH210TM belongs to Fairchild's legacy PNP power transistor family designed for high-current, surface-mount switching and linear regulation in industrial automation and power conversion systems.

FAQ

What is the maximum continuous collector current rating for the KSH210TM?

The KSH210TM is rated for -5 A continuous collector current (IC) at case temperature TC = 25°C. This rating assumes adequate heatsinking; derating applies above 25°C per the published power derating curve, reaching zero dissipation at TC = 175°C. The KSH210TM must not exceed this limit in DC or repetitive pulse operation without thermal verification.

Does the KSH210TM have a built-in diode or integrated protection features?

No, the KSH210TM is a discrete PNP bipolar junction transistor with no integrated diode, protection circuitry, or thermal shutdown. It contains only the three-terminal BJT structure - base, collector, emitter - as confirmed in the Fairchild Rev. A4 datasheet. External flyback diodes, base resistors, and current-limiting components must be added per application requirements. The KSH210TM relies entirely on external design for safe operation.

What package type does the KSH210TM use, and is it RoHS-compliant?

The KSH210TM uses the D-PAK (TO-252) surface-mount package with lead-formed terminals, as specified in the Fairchild datasheet. While the original Rev. A4 document predates RoHS enforcement, current production lots supplied by Aetrix Electronics meet RoHS Directive 2011/65/EU and are lead-free. The KSH210TM's package markings and material declarations align with JEDEC standard MS-012.

Can the KSH210TM be used in avalanche mode?

No, the KSH210TM is not rated or characterized for avalanche operation. Its absolute maximum VCEO = -25 V and VCBO = -40 V define hard breakdown limits, and the datasheet provides no SOA curves, energy ratings, or test conditions for repetitive avalanche. Using the KSH210TM beyond VCEO risks permanent degradation. For avalanche-tolerant designs, consider purpose-built parts such as the FZT795 or NSS12201LT1G instead of the KSH210TM.

What is the typical VBE(on) for the KSH210TM at IC = -2 A?

The typical base-emitter on voltage (VBE(on)) for the KSH210TM is -1.6 V at VCE = -1 V and IC = -2 A, as specified in the "Electrical Characteristics" table of the Fairchild datasheet. This value reflects forward-biased junction behavior under active conduction and is critical for calculating required base drive voltage and series resistor values in practical circuits using the KSH210TM.

KSH210TM Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
1.8V @ 1A, 5A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 2A, 1V
Power - Max:
1.4 W
Frequency - Transition:
65MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

KSH210TM FAQ

1.How can I place an order for KSH210TM through Aetrix?

Please submit a Request for Quotation (RFQ) for KSH210TM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSH210TM reliable?

The price and inventory of KSH210TM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSH210TM is usually 5 days.

3.What payment methods are accepted for KSH210TM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSH210TM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSH210TM?

KSH210TM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSH210TM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSH210TM?

For technical support, including KSH210TM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSH210TM requirements.

6.How does Aetrix verify that KSH210TM is sourced from the original manufacturer or authorized distributors?

All KSH210TM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSH210TM meets industry standards.

7.What is the process for return or replacement of KSH210TM?

All KSH210TM units undergo pre-shipment inspection (PSI). If there is an issue with KSH210TM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSH210TM part is unused and in its original packaging.

Return procedure for KSH210TM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSH210TM Tags

  • KSH210TM
  • KSH210TM PDF
  • KSH210TM Datasheet
  • KSH210TM Specifications
  • KSH210TM Images
  • onsemi
  • onsemi KSH210TM
  • Buy KSH210TM
  • KSH210TM Price
  • KSH210TM Distributor
  • KSH210TM Supplier
  • KSH210TM Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER