Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSH29ITU

Part No.:
KSH29ITU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixKSH29ITU.pdf
Description:
TRANS NPN 40V 1A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,248

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSH29ITU from ON Semiconductor is an NPN epitaxial silicon transistor designed for general-purpose amplification and low-speed switching applications, featuring 40 V VCEO, 1 A continuous collector current, 15 W collector dissipation at TC = 25°C, and a D-PAK (TO-252) surface-mount package. It serves as a robust power switch in DC motor drivers and linear regulators.

For engineers reviewing the KSH29ITU datasheet, pinout, applications, or equivalent options, key selection criteria include its 40 V collector-emitter sustaining voltage, 0.7 V VCE(sat) at IC = 1 A / IB = 125 mA, 3 MHz fT, junction temperature rating of 150°C, and compatibility with I-PAK/D-PAK PCB footprints.

Technical Context

The KSH29ITU operates as a medium-power bipolar junction transistor with fixed NPN polarity and DC current gain (hFE) ranging from 40 to 75 at VCE = 4 V and IC = 0.2 A. Its safe operating area supports pulsed collector currents up to 3 A with appropriate thermal management.

Designed for surface-mount assembly, the device uses a single-ended D-PAK thermal package with exposed drain pad for enhanced heat transfer. Electrical behavior is characterized under standard test conditions including TC = 25°C for absolute maximum ratings and TA = 25°C for ambient-rated dissipation limits.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 40 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition
IC (DC) 1 A - Continuous collector current capacity defining steady-state switching or amplification load handling
PC (TC=25°C) 15 W - Thermal power limit at case temperature of 25°C, requiring heatsinking above ambient derating curve
VCE(sat) 0.7 V - Saturation voltage at IC = 1 A and IB = 125 mA, directly impacting conduction loss in switching circuits
fT 3 MHz - Current-gain bandwidth product indicating usable frequency range for small-signal amplification
hFE 40–75 - DC current gain range at VCE = 4 V and IC = 0.2 A, critical for base drive sizing in linear or saturated operation

Pinout & Package

The KSH29ITU is housed in a D-PAK (TO-252) thermally enhanced surface-mount package with an exposed drain pad for PCB-level heat dissipation. Pin configuration follows standard three-terminal BJT layout.

Pin/Terminal Circuit Role Design Meaning
1 (Base) Control input terminal Receives base current to bias transistor into active or saturation region; requires current-limiting resistor in most driver circuits
2 (Collector) High-side current path Connected to load supply rail; carries full switched current and must be routed with adequate copper area for thermal and current handling
3 (Emitter) Low-side return path Typically tied to ground or low-side reference; forms common emitter node for amplification or switching configurations

Key Features

Feature Design Value
Surface-mount D-PAK package Enables automated assembly and improves thermal coupling to PCB copper, supporting higher power density than through-hole alternatives
15 W collector dissipation (TC = 25°C) Allows sustained operation at 1 A with proper heatsinking, suitable for intermittent duty-cycle power control
0.7 V VCE(sat) at rated current Reduces conduction losses in switching applications, lowering thermal stress and improving efficiency vs. higher-Vsat transistors
Electrically similar to TIP29 Provides drop-in replacement path for legacy designs using TIP29-series TO-220 devices when adapted to D-PAK footprint

Applications

DC Motor Control Linear Voltage Regulator

Use Scenario: Driving brushed DC motors in industrial actuators or consumer appliances with PWM-based speed control.

IC Role / Device Role / Timing Role: Power switch in low-frequency (<10 kHz) H-bridge or single-ended driver stage.

Use Value: 1 A continuous current and 40 V VCEO support 24 V motor systems with margin; low VCE(sat) minimizes I²R heating during on-state.

Use Scenario: Pass transistor in adjustable linear regulators delivering up to 1 A output current.

IC Role / Device Role / Timing Role: Series pass element dissipating excess voltage between unregulated input and regulated output.

Use Value: 15 W thermal capability enables stable operation at 5–10 V dropout; hFE range simplifies base drive design across load conditions.

Power Supply OR-ing Relay Driver Circuit

Use Scenario: Diode-replacement in redundant 12 V/24 V power supply paths where forward voltage drop must be minimized.

IC Role / Device Role / Timing Role: Active switch controlling current flow direction based on supply priority logic.

Use Value: 0.7 V VCE(sat) cuts conduction loss by >60% versus Schottky diodes, reducing heat generation and improving system efficiency.

Use Scenario: Driving electromagnetic relays with coil currents up to 800 mA in industrial control panels.

IC Role / Device Role / Timing Role: Saturated switch interfacing microcontroller GPIO to inductive relay load.

Use Value: 3 MHz fT and fast turn-on/turn-off times ensure reliable relay actuation without excessive delay; 150°C TJ rating accommodates enclosure temperature rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD2955TU PNP complement with −60 V VCEO, −10 A IC, TO-252 package; not electrically interchangeable Used in complementary push-pull stages or high-side switching where PNP topology required Select only when circuit topology demands PNP polarity and higher voltage/current ratings
TIP29C Through-hole TO-220 package, same 100 V VCEO and 1 A IC, but lower thermal performance (15 W at TC = 25°C vs. 1.56 W at TA = 25°C) Legacy designs with manual assembly or limited PCB space for heatsinking Choose for direct mechanical replacement in existing TO-220 layouts; KSH29ITU preferred for new SMT designs requiring better thermal efficiency

Compared with MJD2955TU and TIP29C, the KSH29ITU offers superior thermal resistance in surface-mount form factor, enabling higher power density in compact layouts while maintaining compatibility with widely used base-drive networks for TIP29-family transistors.

Availability

KSH29ITU is available at Aetrix Electronics and suitable for DC motor control, linear voltage regulation, power supply OR-ing, and relay driver applications requiring stable component supply and long-term industrial availability.

Supply support for KSH29ITU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The KSH29ITU belongs to ON Semiconductor's legacy power bipolar transistor portfolio, originally developed by Fairchild Semiconductor for cost-sensitive, medium-power linear and switching applications demanding reliability and manufacturability.

FAQ

What is the maximum collector-emitter voltage rating for the KSH29ITU?

The KSH29ITU has a maximum collector-emitter sustaining voltage (VCEO(sus)) of 40 V under test condition IC = 30 mA and IB = 0. This rating defines the upper limit for safe operation in switching or amplification circuits without risk of avalanche breakdown. Exceeding this voltage may cause irreversible device failure. The KSH29ITU datasheet specifies this parameter explicitly for the KSH29 variant, confirming its suitability for 24 V and lower DC systems.

Does the KSH29ITU have a built-in base-emitter resistor?

No, the KSH29ITU is a standard discrete NPN bipolar junction transistor without integrated base resistors. It requires external base current limiting-typically via a series resistor-to achieve proper biasing in either linear or saturated operation. This design allows flexible drive configuration across varying supply voltages and load requirements, unlike digital transistors which embed internal resistors. The KSH29ITU's base-emitter on voltage is specified as 1.3 V at IC = 1 A.

Can the KSH29ITU replace the TIP29 in existing designs?

The KSH29ITU is electrically similar to the TIP29 and shares identical electrical characteristics including VCEO, IC, hFE, and VCE(sat). However, it uses a D-PAK (TO-252) surface-mount package instead of the TIP29's TO-220 through-hole package. Therefore, the KSH29ITU can replace the TIP29 only if the PCB layout is updated to accommodate the D-PAK footprint and thermal pad. The KSH29ITU offers improved thermal performance in SMT implementations.

What is the thermal resistance junction-to-case for the KSH29ITU?

The KSH29ITU does not specify RθJC directly in the provided documentation, but its 15 W collector dissipation rating at TC = 25°C implies a typical RθJC of approximately 1.67°C/W. This value is derived from ΔT = P × RθJC, where 150°C − 25°C = 125°C temperature rise across the junction-to-case path. Actual thermal performance depends on PCB copper area, solder coverage of the exposed pad, and airflow. For precise thermal modeling, the KSH29ITU should be evaluated using manufacturer-recommended layout guidelines.

Is the KSH29ITU suitable for use in automotive applications?

The KSH29ITU is not qualified to AEC-Q101 or other automotive-grade reliability standards. While its 150°C junction temperature rating and robust construction support industrial environments, ON Semiconductor does not list the KSH29ITU in its automotive product portfolio. For automotive applications-including engine control, body electronics, or ADAS subsystems-engineers should select components explicitly certified to AEC-Q101 and supported by PPAP documentation. The KSH29ITU remains appropriate for commercial and industrial equipment where extended temperature operation is needed but automotive qualification is not required.

KSH29ITU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
700mV @ 125mA, 1A
Current - Collector Cutoff (Max):
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 1A, 4V
Power - Max:
1.56 W
Frequency - Transition:
3MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK

KSH29ITU FAQ

1.How can I place an order for KSH29ITU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSH29ITU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSH29ITU reliable?

The price and inventory of KSH29ITU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSH29ITU is usually 5 days.

3.What payment methods are accepted for KSH29ITU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSH29ITU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSH29ITU?

KSH29ITU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSH29ITU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSH29ITU?

For technical support, including KSH29ITU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSH29ITU requirements.

6.How does Aetrix verify that KSH29ITU is sourced from the original manufacturer or authorized distributors?

All KSH29ITU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSH29ITU meets industry standards.

7.What is the process for return or replacement of KSH29ITU?

All KSH29ITU units undergo pre-shipment inspection (PSI). If there is an issue with KSH29ITU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSH29ITU part is unused and in its original packaging.

Return procedure for KSH29ITU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSH29ITU Tags

  • KSH29ITU
  • KSH29ITU PDF
  • KSH29ITU Datasheet
  • KSH29ITU Specifications
  • KSH29ITU Images
  • onsemi
  • onsemi KSH29ITU
  • Buy KSH29ITU
  • KSH29ITU Price
  • KSH29ITU Distributor
  • KSH29ITU Supplier
  • KSH29ITU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER