onsemi KSH3055ITU

Overview

KSH3055ITU from ON Semiconductor is a high-current NPN epitaxial silicon transistor rated for 60 V V_CEO, 10 A I_C, and 20 W P_C at T_C = 25°C, optimized for low-speed switching and general-purpose amplifier applications in industrial power supplies and motor control circuits.

For engineers reviewing the KSH3055ITU datasheet, pinout, applications, or equivalent options, key selection criteria include its D-PAK package thermal performance, DC current gain (h_FE = 20–100 at I_C = 4–10 A), V_CE(sat) ≤ 1.1 V at I_C = 4 A / I_B = 0.4 A, and f_T ≥ 2 MHz - all critical for robust linear and switching operation in thermally constrained PCB layouts.

Technical Context

The KSH3055ITU operates as a discrete bipolar junction transistor with fixed NPN polarity, requiring external base drive for saturation or active-region biasing. Its safe operating area (SOA) is defined up to 10 A and 60 V with pulse conditions (PW ≤ 300 µs, duty ≤ 2%), and thermal derating begins at T_C > 25°C per the published power derating curve.

It features a minimum f_T of 2 MHz at V_CE = 10 V and I_C = 500 mA, supporting moderate-frequency amplification, while V_BE(on) = 1.8 V at V_CE = 4 V and I_C = 4 A confirms predictable turn-on behavior under high-current drive conditions.

Key Specifications

Pinout & Package

D-PAK (TO-252) surface-mount package with exposed drain pad for thermal enhancement; 3-terminal configuration optimized for PCB heat spreading and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current transistor applications.

Compared with MJD3055G and KSE3055T, the KSH3055ITU offers optimal balance of SMT compatibility, 20 W thermal capacity in D-PAK, and verified h_FE linearity up to 10 A - making it preferred for new industrial PCB designs prioritizing assembly efficiency and thermal headroom.

Availability

KSH3055ITU is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and audio amplifier designs requiring stable component supply and long-term manufacturing continuity.

Supply support for KSH3055ITU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor components focused on automotive, industrial, cloud computing, and IoT applications.

The KSH3055ITU belongs to ON Semiconductor's general-purpose bipolar transistor family, designed specifically for cost-sensitive, high-reliability industrial switching and amplification where thermal robustness and parameter consistency are essential.

FAQ

What is the maximum junction temperature for the KSH3055ITU?

The KSH3055ITU has a maximum junction temperature (T_J) rating of 150°C, as specified in its Absolute Maximum Ratings table. This value defines the upper thermal limit for reliable operation; sustained operation above this temperature risks permanent degradation. Derating curves in the datasheet show allowable power reduction as case temperature increases beyond 25°C. Engineers must verify thermal design margins using actual board layout and airflow conditions before finalizing the KSH3055ITU implementation.

Does the KSH3055ITU support pulsed operation beyond its DC current rating?

Yes, the KSH3055ITU supports pulsed collector current up to 10 A under conditions defined as PW ≤ 300 µs and duty cycle ≤ 2%, per its Absolute Maximum Ratings. This allows short-duration surge handling - such as motor startup or relay coil energization - without exceeding thermal limits. However, the Safe Operating Area (SOA) graph must be consulted to confirm voltage-current combinations remain within boundaries during each pulse. The KSH3055ITU is not rated for repetitive pulses exceeding these constraints without thermal verification.

Is the KSH3055ITU pin-compatible with the KSE3055T?

No, the KSH3055ITU is not pin-compatible with the KSE3055T. The KSH3055ITU uses a D-PAK (TO-252) surface-mount package with terminals arranged Base–Collector–Emitter, while the KSE3055T uses a TO-220 through-hole package with different lead spacing and mechanical orientation. Although electrically similar per manufacturer documentation, their physical interfaces require distinct PCB footprints and assembly processes. Substituting KSH3055ITU for KSE3055T requires layout revision and requalification.

What is the typical V_BE(on) for the KSH3055ITU under standard operating conditions?

The typical V_BE(on) for the KSH3055ITU is 1.8 V when measured at V_CE = 4 V and I_C = 4 A, as stated in its Electrical Characteristics table. This value reflects forward-bias voltage required to achieve specified collector current under active conduction. It remains stable across production lots and supports consistent base resistor sizing in fixed-drive applications. Designers should allow ±0.2 V tolerance in bias network calculations to accommodate process variation and temperature drift across the −55°C to +150°C operating range of the KSH3055ITU.

Can the KSH3055ITU be used in linear amplifier configurations?

Yes, the KSH3055ITU is explicitly characterized for general-purpose amplifier use, with h_FE and f_T parameters validated across its operating range. Its f_T ≥ 2 MHz and h_FE linearity up to 10 A support Class AB audio output stages and precision current amplifiers. However, linear operation demands strict thermal management - the KSH3055ITU's 20 W P_C rating applies only at T_C = 25°C, so heatsinking must be designed to maintain case temperature well below that threshold during continuous dissipation. The KSH3055ITU is not recommended for RF or high-fidelity applications beyond 100 kHz without empirical validation.