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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSH44H11ITU

Name: KSH44H11ITU
Brand: onsemi
SKU: KSH44H11ITU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSH44H11ITU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: KSH44H11ITU.pdf

Description:: TRANS NPN 80V 8A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSH44H11ITU from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-251 (I-PAK) package, rated for 80 V V_CEO, 8 A DC collector current, and 20 W collector dissipation at T_C = 25°C. It delivers low V_CE(sat) of 1 V at I_C = 8 A / I_B = 0.4 A and fast switching with t_ON = 300 ns, t_F = 140 ns - used in high-efficiency switching regulators and DC-DC converters.

For engineers reviewing the KSH44H11ITU datasheet, pinout, applications, or equivalent options, key selection criteria include its 80 V breakdown voltage, 8 A continuous current capability, TO-251 thermal performance, saturation voltage under high drive, and safe operating area in power switching topologies.

Technical Context

This device operates as a general-purpose NPN bipolar junction transistor optimized for medium-power switching and linear amplification. Its design emphasizes low saturation voltage and fast turn-on/turn-off times, supported by a current gain bandwidth product (f_T) of 50 MHz at V_CE = 10 V and I_C = 0.5 A.

The KSH44H11ITU features a rugged SOA curve enabling reliable operation under pulsed loads up to 16 A (I_CP), with base-emitter and collector-emitter sustaining voltages tightly specified at 5 V and 80 V respectively - critical for gate-drive isolation and overvoltage protection in flyback and forward converter stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum collector-emitter voltage before avalanche breakdown; defines upper limit for switch-node voltage in non-isolated DC-DC topologies.
I_C (DC)	8 A - Continuous collector current rating at T_C = 25°C; determines usable output power in Class AB amplifiers or synchronous rectifier drivers.
V_CE(sat)	1 V @ I_C = 8 A, I_B = 0.4 A - Low saturation voltage minimizes conduction loss and thermal stress in high-duty-cycle switching applications.
f_T	50 MHz - Current gain-bandwidth product indicating usable frequency range for small-signal amplification or high-speed switching control loops.
t_ON/t_F	300 ns / 140 ns - Fast switching transitions reduce switching losses and EMI generation in PWM-based power supplies operating up to ~500 kHz.
C_ob	130 pF @ V_CB = 10 V - Output capacitance affects zero-voltage switching feasibility and snubber design in resonant converters.

Pinout & Package

Package: TO-251 (I-PAK), surface-mount, straight-lead variant with integrated heat slug on collector terminal. Thermal resistance R_θJC = 0.75°C/W enables direct PCB copper pour cooling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to bias transistor into active or saturation region; requires ≥0.4 A drive for full 8 A collector conduction.
2 (Collector)	High-current output node	Connected to heat slug; carries main load current and dissipates majority of power; must be soldered to large copper area for thermal management.
3 (Emitter)	Reference return path	Serves as common emitter node; low-inductance connection essential to minimize switching overshoot and ensure stable gain in amplifier configurations.

Key Features

Feature	Design Value
Low V_CE(sat)	1 V at 8 A ensures <1 W conduction loss per device in 12 V–48 V industrial SMPS outputs, improving efficiency and reducing heatsink requirements.
Fast switching	300 ns turn-on and 140 ns fall time enable clean square-wave operation at 200–500 kHz, supporting compact magnetics and reduced filter size.
Rugged SOA	Rated for 16 A pulsed current and defined safe operating area up to 100 V × 1 A, allowing robust handling of inductive kickback in motor driver half-bridges.
TO-251 package	Straight-lead I-PAK provides mechanical stability and superior thermal transfer vs. TO-92; compatible with automated pick-and-place and reflow processes.

Applications

Switching Regulators	DC-DC Converters
Use Scenario: Used as main switching transistor in non-isolated buck regulators delivering 5–24 V at up to 6 A output. IC Role / Device Role / Timing Role: Power switch controlling energy transfer from input to output inductor; driven by PWM controller IC. Use Value: Low V_CE(sat) and fast t_F reduce total switching + conduction losses, enabling >92% efficiency at 400 kHz switching frequency.	Use Scenario: Employed in isolated forward or flyback converter primary-side switches for telecom and industrial power supplies. IC Role / Device Role / Timing Role: High-voltage NPN switch handling primary winding current; synchronized with transformer reset timing. Use Value: 80 V V_CEO supports 48 V input systems with margin for reflected transients; SOA withstands leakage inductance spikes without secondary clamping.
Power Amplifiers	Motor Driver Stages
Use Scenario: Output stage transistor in Class AB audio or RF power amplifiers requiring 5–10 W continuous output. IC Role / Device Role / Timing Role: Linear amplifying element biased in active region; handles both signal swing and DC quiescent current. Use Value: h_FE ≥ 40 at I_C = 4 A ensures stable bias control; f_T = 50 MHz supports wideband audio fidelity up to 20 kHz with low distortion.	Use Scenario: High-side or low-side switch in brushed DC motor H-bridge driver modules for industrial actuators. IC Role / Device Role / Timing Role: Discrete power switch controlling motor current direction and magnitude; commutated at ≤20 kHz PWM. Use Value: 8 A I_C rating supports 12–24 V motors drawing up to 5 A RMS; fast t_ON/t_F minimizes shoot-through risk during bridge dead-time transitions.

Switching Regulators

DC-DC Converters

Use Scenario: Used as main switching transistor in non-isolated buck regulators delivering 5–24 V at up to 6 A output.

IC Role / Device Role / Timing Role: Power switch controlling energy transfer from input to output inductor; driven by PWM controller IC.

Use Value: Low V_CE(sat) and fast t_F reduce total switching + conduction losses, enabling >92% efficiency at 400 kHz switching frequency.

Use Scenario: Employed in isolated forward or flyback converter primary-side switches for telecom and industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage NPN switch handling primary winding current; synchronized with transformer reset timing.

Use Value: 80 V V_CEO supports 48 V input systems with margin for reflected transients; SOA withstands leakage inductance spikes without secondary clamping.

Power Amplifiers

Motor Driver Stages

Use Scenario: Output stage transistor in Class AB audio or RF power amplifiers requiring 5–10 W continuous output.

IC Role / Device Role / Timing Role: Linear amplifying element biased in active region; handles both signal swing and DC quiescent current.

Use Value: h_FE ≥ 40 at I_C = 4 A ensures stable bias control; f_T = 50 MHz supports wideband audio fidelity up to 20 kHz with low distortion.

Use Scenario: High-side or low-side switch in brushed DC motor H-bridge driver modules for industrial actuators.

IC Role / Device Role / Timing Role: Discrete power switch controlling motor current direction and magnitude; commutated at ≤20 kHz PWM.

Use Value: 8 A I_C rating supports 12–24 V motors drawing up to 5 A RMS; fast t_ON/t_F minimizes shoot-through risk during bridge dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD44H11T4	Same V_CEO (80 V), identical TO-252 package, but 10 A I_C rating and higher P_C (25 W); slightly higher V_CE(sat) (1.2 V).	Better suited for higher-current designs where board space allows DPAK footprint; less optimal for TO-251-limited layouts.	Select MJD44H11T4 only if layout accommodates TO-252 and thermal budget permits higher saturation loss.
KSE44H11	Identical electrical specs and TO-251 package; same V_CEO, I_C, V_CE(sat), and f_T; manufactured by ON Semiconductor as direct functional counterpart.	No application difference - fully interchangeable in existing KSH44H11ITU designs with no circuit or layout change required.	KSE44H11 is the updated ON Semiconductor nomenclature post-Fairchild integration; preferred for new designs and long-term sourcing.

Compared with MJD44H11T4 and KSE44H11, the KSH44H11ITU offers identical performance in TO-251 form factor but reflects legacy Fairchild part numbering; KSE44H11 is the recommended drop-in replacement, while MJD44H11T4 trades package compatibility for higher current headroom.

Availability

KSH44H11ITU is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and power amplifiers requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for KSH44H11ITU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud power applications.

The KSH44H11ITU belongs to ON Semiconductor's legacy Fairchild bipolar power transistor portfolio, designed specifically for cost-effective, thermally robust switching and amplification in mid-power industrial power supplies and motor controls.

FAQ

What is the maximum continuous collector current for KSH44H11ITU?

The KSH44H11ITU is rated for 8 A DC collector current at case temperature T_C = 25°C. Derating applies above this temperature - for example, at T_C = 100°C, the usable I_C drops to approximately 4.5 A based on its 0.75°C/W thermal resistance and 20 W P_C rating. Always verify thermal design margins using actual board-level measurements for KSH44H11ITU in your application.

Does KSH44H11ITU have a built-in base-emitter resistor?

No, the KSH44H11ITU is a standard three-terminal NPN bipolar transistor without any integrated base resistors. It requires external base drive circuitry - typically a current-limiting resistor or dedicated driver IC - to establish proper I_B for desired I_C levels. This gives full flexibility in bias network design but places responsibility on the user to avoid overdriving or insufficient drive for KSH44H11ITU.

What is the safe operating area (SOA) limitation for KSH44H11ITU at 50 V V_CE?

At V_CE = 50 V, the KSH44H11ITU's SOA limits the maximum allowable collector current to approximately 2.5 A for DC operation, based on its published SOA curve (Figure 2). For pulse durations ≤1 ms, it supports up to ~6 A at 50 V. These boundaries prevent second breakdown and must be respected in all KSH44H11ITU switching or linear applications.

Can KSH44H11ITU replace KSE44H11 in existing designs?

Yes, KSH44H11ITU and KSE44H11 share identical electrical specifications, TO-251 package, pinout, and thermal characteristics. The KSE44H11 is the updated ON Semiconductor part number following Fairchild integration, making it a direct functional and mechanical replacement for KSH44H11ITU. No schematic or layout changes are needed when migrating to KSE44H11 from KSH44H11ITU.

What is the typical base-emitter saturation voltage for KSH44H11ITU?

The KSH44H11ITU has a typical V_BE(sat) of 1.5 V at I_C = 8 A and I_B = 0.8 A, as specified in its datasheet. This value reflects the forward voltage drop across the base-emitter junction under hard saturation conditions and directly impacts base drive power loss and required driver voltage headroom for reliable KSH44H11ITU operation.

KSH44H11ITU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 4A, 1V

Power - Max:: 1.75 W

Frequency - Transition:: 50MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

KSH44H11ITU FAQ

1.How can I place an order for KSH44H11ITU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSH44H11ITU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSH44H11ITU reliable?

The price and inventory of KSH44H11ITU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSH44H11ITU is usually 5 days.

3.What payment methods are accepted for KSH44H11ITU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSH44H11ITU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSH44H11ITU?

KSH44H11ITU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSH44H11ITU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSH44H11ITU?

For technical support, including KSH44H11ITU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSH44H11ITU requirements.

6.How does Aetrix verify that KSH44H11ITU is sourced from the original manufacturer or authorized distributors?

All KSH44H11ITU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSH44H11ITU meets industry standards.

7.What is the process for return or replacement of KSH44H11ITU?

All KSH44H11ITU units undergo pre-shipment inspection (PSI). If there is an issue with KSH44H11ITU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSH44H11ITU part is unused and in its original packaging.

Return procedure for KSH44H11ITU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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