onsemi KSH44H11TM

Overview

KSH44H11TM from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-252 (DPAK) package, rated for 80 V V_CEO, 8 A DC collector current, and 20 W collector dissipation at T_C = 25°C. It delivers low 1 V V_CE(sat) at I_C = 8 A / I_B = 0.4 A and supports fast switching with 300 ns t_ON, 500 ns t_STG, and 140 ns t_F, targeting high-efficiency switching regulators and DC-DC converters.

For engineers reviewing the KSH44H11TM datasheet, pinout, applications, or equivalent options, key selection criteria include its DPAK thermal performance, verified h_FE ≥ 40 at I_C = 4 A, f_T = 50 MHz gain-bandwidth, Cob = 130 pF output capacitance, and suitability for surface-mount power stage designs requiring robust SOA up to 5 ms pulse width.

Technical Context

This device operates as a general-purpose NPN bipolar junction transistor optimized for medium-power switching and linear amplification. Its epitaxial base structure enables stable h_FE across I_C = 2–4 A and supports sustained operation at T_J ≤ 150°C with derated power above T_C = 25°C.

The KSH44H11TM features a single-ended three-terminal configuration with defined safe operating area (SOA) limits, including 8 A DC and 16 A pulsed collector current capability. Its 1.5 V V_BE(sat) at I_C = 8 A / I_B = 0.8 A confirms strong base drive efficiency under high-current saturation conditions.

Key Specifications

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, thermally enhanced plastic package with exposed drain pad (pin 2) for PCB heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD44H11T4 and BD249C, the KSH44H11TM provides superior combination of 80 V blocking, 8 A DC current, 1 V saturation, and DPAK thermal performance-making it optimal for new SMT-based 24–48 V industrial power stages where efficiency and board space are critical.

Availability

KSH44H11TM is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and power amplifiers requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for KSH44H11TM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, cloud, and consumer markets.

The KSH44H11TM belongs to ON Semiconductor's legacy Fairchild power transistor portfolio, designed specifically for high-reliability, medium-power switching and amplification in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous collector current rating for KSH44H11TM?

The KSH44H11TM has a maximum continuous collector current (I_C) rating of 8 A at case temperature T_C = 25°C. This rating decreases with rising case temperature per the power derating curve in the datasheet. At T_C = 100°C, the usable I_C drops to approximately 4.5 A. Designers must ensure proper heatsinking to maintain KSH44H11TM within its safe operating area during sustained operation.

Does KSH44H11TM support surface-mount assembly?

Yes, KSH44H11TM uses the TO-252-3 (DPAK) package with gull-wing leads optimized for surface-mount reflow soldering. Its lead-formed configuration and thermal pad on pin 2 allow direct attachment to PCB copper for effective heat dissipation. The device is supplied in tape-and-reel format (KSH44H11TM), making it compatible with automated pick-and-place equipment used in high-volume manufacturing of KSH44H11TM-based power modules.

What is the typical V_CE(sat) of KSH44H11TM under full-load conditions?

The typical V_CE(sat) of KSH44H11TM is 1 V when operated at I_C = 8 A and I_B = 0.4 A, per the official datasheet. This value is measured under DC conditions at T_A = 25°C and reflects the device's low-saturation characteristic critical for minimizing conduction losses. Actual V_CE(sat) may increase slightly at elevated junction temperatures, so thermal design must account for worst-case voltage drop in KSH44H11TM-based circuits.

Can KSH44H11TM replace KSE44H in existing designs?

Yes, KSH44H11TM is electrically similar to the KSE44H and shares identical voltage, current, and gain specifications, including V_CEO = 80 V, I_C = 8 A, and h_FE ≥ 40 at I_C = 4 A. However, KSH44H11TM uses TO-252 (DPAK) while KSE44H uses TO-220, so mechanical layout and thermal interface must be revised. The KSH44H11TM offers improved thermal resistance via surface-mount thermal pad, but requires PCB redesign-not a drop-in replacement.

What is the safe operating area (SOA) limitation for KSH44H11TM at 100 μs pulse width?

At 100 μs pulse width, the KSH44H11TM SOA supports up to 12 A collector current at V_CE = 40 V, based on the published SOA graph in the datasheet. This pulse capability exceeds its 8 A DC rating and enables short-duration surge handling in motor start-up or fault-clearing scenarios. Designers must validate KSH44H11TM operation within this boundary using actual waveform measurements, as SOA limits are sensitive to junction temperature and test conditions.