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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSH45H11ITU

Name: KSH45H11ITU
Brand: onsemi
SKU: KSH45H11ITU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSH45H11ITU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: KSH45H11ITU.pdf

Description:: TRANS PNP 80V 8A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSH45H11ITU from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-251 (IPAK) package, rated for −80 V V_CEO, −8 A DC collector current, and 20 W collector dissipation at T_C = 25°C. It delivers low −1 V V_CE(sat) at −8 A/−0.4 A drive and supports fast switching with 135 ns t_ON, 500 ns t_STG, and 100 ns t_F, making it suitable for high-efficiency DC-DC converter output stages.

For engineers reviewing the KSH45H11ITU datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-251 lead configuration (straight leads), −80 V blocking capability, saturation voltage under high-current switching, and thermal performance in surface-mount power stage layouts.

Technical Context

The KSH45H11ITU operates as a medium-power PNP bipolar junction transistor optimized for linear and switching applications where complementary NPN devices are unavailable or impractical. Its design emphasizes low saturation voltage and fast turn-off characteristics, enabled by epitaxial base construction and optimized doping profiles.

It functions in common-emitter configuration with base-driven control, supporting continuous DC operation up to −8 A and pulsed currents to −16 A. The device's 40 MHz f_T and 230 pF C_ob at −10 V define its usable bandwidth and switching loss envelope in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−80 V: Maximum reverse-biased collector–emitter voltage before breakdown; defines safe operating range in flyback or buck-boost switch node placement.
I_C (DC)	−8 A: Continuous collector current rating at T_C = 25°C; sets minimum heatsink requirement for sustained conduction in power amplifier output stages.
V_CE(sat)	−1 V @ I_C = −8 A, I_B = −0.4 A: Confirmed low on-state loss; reduces conduction heating in high-duty-cycle regulators.
t_ON/t_STG/t_F	135 ns / 500 ns / 100 ns: Verified switching timing under defined test conditions; enables >100 kHz operation with controlled overlap loss.
f_T	40 MHz: Current-gain bandwidth product at V_CE = −10 V, I_C = −0.5 A; indicates usable frequency limit for small-signal amplification or gate driving.
P_C (T_C = 25°C)	20 W: Maximum steady-state power dissipation at case temperature of 25°C; requires thermal interface and copper area per derating curve in Figure 3.

Pinout & Package

Package: TO-251 (IPAK), molded 3-lead surface-mount package with straight leads (I-PAK configuration); thermally enhanced plastic body with exposed collector tab for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives forward-biased base current to initiate conduction; requires external current-limiting resistor or driver capable of sourcing −0.8 A peak for full saturation.
2 (Collector)	Main current-carrying terminal (anode-side)	Connected to high-side rail or inductive load return path; electrically tied to exposed metal tab for thermal and electrical connection to PCB copper pour.
3 (Emitter)	Current return terminal (cathode-side)	Serves as reference node for load current; must be routed with low-inductance trace when used in high-di/dt switching applications.

Key Features

Feature	Design Value
PNP polarity with −80 V V_CEO	Enables high-side switching and complementary topology implementation where NPN alternatives lack matching voltage rating or gain consistency.
Low −1 V V_CE(sat) at −8 A	Reduces conduction loss by ≥30% versus standard PNP transistors in same package, improving efficiency in 12–48 V industrial DC-DC converters.
Fast switching (t_F = 100 ns)	Minimizes tail current during turn-off, lowering switching losses and enabling higher-frequency operation without excessive EMI generation.
TO-251 (IPAK) straight-lead form	Supports automated pick-and-place and reflow soldering while maintaining mechanical robustness and thermal performance comparable to TO-252 variants.

Applications

Switching Regulators	DC-DC Converters
Use Scenario: High-side switch in non-synchronous buck or SEPIC regulator operating at 50–200 kHz with 24 V input and 5–15 V output. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to output inductor; driven by PWM controller via base resistor network. Use Value: −80 V rating accommodates input transients; −1 V V_CE(sat) maintains <1.5 W conduction loss at 8 A load, reducing thermal stress on PCB layout.	Use Scenario: Output stage in isolated forward converter with active clamp reset, handling 6–10 A continuous load. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in PNP-configured secondary-side regulation; commutated by isolated gate driver synchronized to primary MOSFET. Use Value: Fast 100 ns fall time ensures clean turn-off before primary-side reactivation, preventing shoot-through and improving cross-regulation.
Power Amplifiers	Motor Drive Stages
Use Scenario: Class AB push-pull output stage in 20–50 W audio amplifier using complementary PNP/NPN pair. IC Role / Device Role / Timing Role: Negative-rail emitter-follower delivering current to speaker load; biased with quiescent current set by V_BE multiplier. Use Value: h_FE ≥40 at −4 A ensures stable current gain across output swing; 150°C T_J rating supports compact heatsinking in enclosed enclosures.	Use Scenario: H-bridge high-side driver for brushed DC motor control in industrial actuator (24–48 V, 5–7 A). IC Role / Device Role / Timing Role: Upper-leg switch enabling bidirectional current flow; commutated by microcontroller GPIO through level-shifting buffer. Use Value: −16 A I_CP pulse rating handles motor stall current surges; TO-251 package allows direct mounting to aluminum chassis for passive cooling.

Switching Regulators

DC-DC Converters

Use Scenario: High-side switch in non-synchronous buck or SEPIC regulator operating at 50–200 kHz with 24 V input and 5–15 V output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to output inductor; driven by PWM controller via base resistor network.

Use Value: −80 V rating accommodates input transients; −1 V V_CE(sat) maintains <1.5 W conduction loss at 8 A load, reducing thermal stress on PCB layout.

Use Scenario: Output stage in isolated forward converter with active clamp reset, handling 6–10 A continuous load.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in PNP-configured secondary-side regulation; commutated by isolated gate driver synchronized to primary MOSFET.

Use Value: Fast 100 ns fall time ensures clean turn-off before primary-side reactivation, preventing shoot-through and improving cross-regulation.

Power Amplifiers

Motor Drive Stages

Use Scenario: Class AB push-pull output stage in 20–50 W audio amplifier using complementary PNP/NPN pair.

IC Role / Device Role / Timing Role: Negative-rail emitter-follower delivering current to speaker load; biased with quiescent current set by V_BE multiplier.

Use Value: h_FE ≥40 at −4 A ensures stable current gain across output swing; 150°C T_J rating supports compact heatsinking in enclosed enclosures.

Use Scenario: H-bridge high-side driver for brushed DC motor control in industrial actuator (24–48 V, 5–7 A).

IC Role / Device Role / Timing Role: Upper-leg switch enabling bidirectional current flow; commutated by microcontroller GPIO through level-shifting buffer.

Use Value: −16 A I_CP pulse rating handles motor stall current surges; TO-251 package allows direct mounting to aluminum chassis for passive cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD45H11T4	Same V_CEO (−80 V), lower I_C (−6 A), higher V_CE(sat) (−1.2 V @ −6 A), TO-252 package	Limited to ≤6 A continuous loads; requires larger PCB footprint due to DPAK thermal pad geometry	Select when board space permits TO-252 and load current stays below 6 A; verify base drive compatibility with reduced h_FE.
BDX53C	Lower V_CEO (−100 V), same I_C (−8 A), higher V_CE(sat) (−1.5 V @ −8 A), TO-126 package	Through-hole only; unsuitable for automated SMT assembly; slower switching (t_F ≈ 300 ns)	Choose for legacy through-hole designs or prototyping where manual assembly is acceptable and switching frequency <50 kHz.

Compared with MJD45H11T4 and BDX53C, the KSH45H11ITU offers superior combination of high-current capability, low saturation voltage, and surface-mount compatibility in a thermally efficient IPAK package-making it optimal for modern high-density, high-efficiency power stage implementations.

Availability

KSH45H11ITU is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and power amplifier designs requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for KSH45H11ITU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and consumer markets.

The KSH45H11ITU belongs to ON Semiconductor's legacy Fairchild power bipolar transistor portfolio, designed specifically for high-reliability, medium-power linear and switching applications demanding robust V_CEO, low V_CE(sat), and repeatable thermal performance in surface-mount configurations.

FAQ

What is the maximum continuous collector current rating for the KSH45H11ITU?

The KSH45H11ITU has a maximum continuous collector current (I_C) rating of −8 A at case temperature (T_C) = 25°C. This rating assumes adequate heatsinking; derating is required above 25°C per the power derating curve in Figure 3 of the datasheet. At T_C = 100°C, the usable I_C drops to approximately −4.5 A. Designers must validate thermal design using actual board layout and ambient conditions for the KSH45H11ITU.

Does the KSH45H11ITU have a built-in base-emitter resistor?

No, the KSH45H11ITU is a standard three-terminal PNP bipolar transistor with no integrated base-emitter resistor. It requires an external base current source-typically a series resistor driven by a logic-level or dedicated base driver-to achieve proper saturation. The datasheet specifies V_BE(sat) = −1.5 V at I_C = −8 A and I_B = −0.8 A, confirming discrete base control for the KSH45H11ITU.

What is the pin configuration of the KSH45H11ITU in TO-251 (IPAK) package?

The KSH45H11ITU uses a standardized TO-251 (IPAK) pinout: Pin 1 is Base, Pin 2 is Collector (connected to the exposed metal tab), and Pin 3 is Emitter. This matches Figure 5 in the official datasheet and is consistent across all KSH45H11 variants in I-PAK form. Correct orientation is critical for thermal and electrical performance in the KSH45H11ITU layout.

Can the KSH45H11ITU replace the KSH45H11TF in a design?

The KSH45H11ITU and KSH45H11TF share identical electrical specifications and die, but differ in packaging and packing method: KSH45H11ITU uses TO-251 (IPAK) in rail packaging, while KSH45H11TF uses TO-252 (DPAK) in tape-and-reel. Mechanical redesign is required to substitute KSH45H11ITU for KSH45H11TF due to different footprints and thermal pad layouts-no direct drop-in replacement exists for the KSH45H11ITU.

What is the typical current gain (h_FE) of the KSH45H11ITU at operating conditions?

The KSH45H11ITU exhibits h_FE ≥60 at V_CE = −1 V and I_C = −2 A, and h_FE ≥40 at V_CE = −1 V and I_C = −4 A. These values are specified in the Electrical Characteristics table and reflect DC current gain under defined bias conditions. Designers should verify gain stability across temperature and current range for the KSH45H11ITU in their specific application circuit.

KSH45H11ITU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 4A, 1V

Power - Max:: 1.75 W

Frequency - Transition:: 40MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

KSH45H11ITU FAQ

1.How can I place an order for KSH45H11ITU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSH45H11ITU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSH45H11ITU reliable?

The price and inventory of KSH45H11ITU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSH45H11ITU is usually 5 days.

3.What payment methods are accepted for KSH45H11ITU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSH45H11ITU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSH45H11ITU?

KSH45H11ITU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSH45H11ITU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSH45H11ITU?

For technical support, including KSH45H11ITU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSH45H11ITU requirements.

6.How does Aetrix verify that KSH45H11ITU is sourced from the original manufacturer or authorized distributors?

All KSH45H11ITU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSH45H11ITU meets industry standards.

7.What is the process for return or replacement of KSH45H11ITU?

All KSH45H11ITU units undergo pre-shipment inspection (PSI). If there is an issue with KSH45H11ITU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSH45H11ITU part is unused and in its original packaging.

Return procedure for KSH45H11ITU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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