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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSP63TF

Name: KSP63TF
Brand: onsemi
SKU: KSP63TF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSP63TF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: KSP63TF.pdf

Description:: TRANS PNP DARL 30V 0.5A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSP63TF from Fairchild Semiconductor is a PNP epitaxial silicon Darlington transistor in TO-92 package, rated for -30 V V_CEO, -500 mA I_C, 625 mW P_C, with h_FE ≥ 5,000 at I_C = -100 mA and f_T = 125 MHz - used in low-power switching and amplification circuits such as relay drivers and sensor interface stages.

For engineers reviewing the KSP63TF datasheet, pinout, applications, or equivalent options, key selection considerations include its Darlington gain structure, saturation voltage behavior under high-current drive, thermal limits in through-hole PCB layouts, and compatibility with legacy bipolar logic-level control signals.

Technical Context

The KSP63TF operates as a two-stage monolithic PNP Darlington pair, delivering high DC current gain (h_FE ≥ 5K @ -100 mA) while maintaining V_CE(sat) ≤ -1.5 V at I_C = -100 mA and I_B = -0.1 mA. Its f_T of 125 MHz supports moderate-speed switching up to ~100 kHz in saturated operation.

Designed for linear and switching use with V_EBO = -10 V and T_J = 150 °C maximum, it features low leakage (I_CBO ≤ -100 nA at V_CB = -30 V), enabling stable biasing in temperature-varying industrial signal conditioning nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-30 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
I_C	-500 mA - Continuous collector current limit; defines maximum load drive capability in switching applications.
P_C	625 mW - Total power dissipation at T_A = 25 °C; requires derating above 25 °C ambient per thermal resistance curve.
h_FE	≥ 5,000 @ I_C = -100 mA - High current gain enables microampere-level base drive for milliampere load control.
f_T	125 MHz - Unity-gain bandwidth; indicates usable small-signal amplification up to mid-VHF range.
V_CE(sat)	≤ -1.5 V @ I_C = -100 mA - Low saturation voltage minimizes power loss and heating during on-state conduction.
T_J	150 °C - Maximum junction temperature; sets upper thermal operating limit for reliability-critical designs.

Pinout & Package

Package: TO-92 - 3-lead through-hole plastic package with standard lead spacing (1.27 mm pitch), 3.86 mm max height, and JEDEC registered outline for manual or wave solder assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal	Connected to higher potential rail in PNP switching; provides return path for amplified output current.
2 (Base)	Control input	Receives low-current drive signal; Darlington architecture reduces required base current by factor of ~100× vs. single transistor.
3 (Collector)	Current sink terminal	Connected to load and ground; carries full load current when device is saturated and turned on.

Key Features

Feature	Design Value
Darlington configuration	Monolithic PNP pair integrated on single die - eliminates external wiring, improves gain consistency and thermal tracking.
High DC current gain	h_FE ≥ 5,000 at -100 mA - enables direct drive from CMOS/TTL outputs without additional buffer stages.
Low V_CE(sat)	≤ -1.5 V at rated I_C - reduces conduction loss and self-heating in battery-powered or thermally constrained relays and solenoids.
Robust thermal rating	T_J = 150 °C - supports operation in industrial enclosures with elevated ambient temperatures up to 85 °C.

Applications

Relay Driver Circuit	Sensor Signal Amplifier
Use Scenario: Driving 12 V/400 mA electromagnetic relay coil from microcontroller GPIO. IC Role / Device Role / Timing Role: PNP Darlington switch providing inverted logic-level control and high current gain to activate relay with <100 µA base current. Use Value: Eliminates need for discrete base resistor network and second transistor stage, reducing BOM count and PCB area.	Use Scenario: Amplifying weak negative-going pulses from thermopile or photodiode transimpedance stage. IC Role / Device Role / Timing Role: Linear-mode PNP amplifier configured in common-collector (emitter-follower) topology for impedance matching. Use Value: High h_FE ensures minimal loading of upstream high-impedance sensor node while preserving signal fidelity at DC–10 kHz.
LED Current Regulator	Industrial Logic Interface
Use Scenario: Constant-current sink for high-brightness red/green LED string in panel indicator system. IC Role / Device Role / Timing Role: Switched PNP current source with emitter resistor feedback, operating in active region for stable I_LED. Use Value: V_CE(sat) ≤ -1.5 V allows >10 V headroom for multi-LED series strings powered from 24 V rail.	Use Scenario: Level-shifting and current boosting between 3.3 V FPGA I/O and -5 V ECL logic subsystem. IC Role / Device Role / Timing Role: Inverting interface buffer with fast turn-off due to Darlington internal structure and low storage time. Use Value: f_T = 125 MHz supports clean edge transitions up to 10 Mbps data rates without overshoot or ringing.

Relay Driver Circuit

Sensor Signal Amplifier

Use Scenario: Driving 12 V/400 mA electromagnetic relay coil from microcontroller GPIO.

IC Role / Device Role / Timing Role: PNP Darlington switch providing inverted logic-level control and high current gain to activate relay with <100 µA base current.

Use Value: Eliminates need for discrete base resistor network and second transistor stage, reducing BOM count and PCB area.

Use Scenario: Amplifying weak negative-going pulses from thermopile or photodiode transimpedance stage.

IC Role / Device Role / Timing Role: Linear-mode PNP amplifier configured in common-collector (emitter-follower) topology for impedance matching.

Use Value: High h_FE ensures minimal loading of upstream high-impedance sensor node while preserving signal fidelity at DC–10 kHz.

LED Current Regulator

Industrial Logic Interface

Use Scenario: Constant-current sink for high-brightness red/green LED string in panel indicator system.

IC Role / Device Role / Timing Role: Switched PNP current source with emitter resistor feedback, operating in active region for stable I_LED.

Use Value: V_CE(sat) ≤ -1.5 V allows >10 V headroom for multi-LED series strings powered from 24 V rail.

Use Scenario: Level-shifting and current boosting between 3.3 V FPGA I/O and -5 V ECL logic subsystem.

IC Role / Device Role / Timing Role: Inverting interface buffer with fast turn-off due to Darlington internal structure and low storage time.

Use Value: f_T = 125 MHz supports clean edge transitions up to 10 Mbps data rates without overshoot or ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA64	V_CEO = -40 V, h_FE = 25K min @ -10 mA, TO-92 package, no f_T spec provided	Higher voltage rating but lower gain at high current; not characterized for f_T or V_CE(sat) at -100 mA	Preferred where higher breakdown margin is critical and switching speed is secondary.
PN2907A	Single PNP transistor, V_CEO = -60 V, h_FE = 100 min @ -150 mA, V_CE(sat) = -1.6 V @ -500 mA	Lacks Darlington gain; requires ~10× more base current for same collector load	Selected when faster switching, lower storage time, or higher peak current capability is prioritized over drive simplicity.

Compared with MPSA64 and PN2907A, the KSP63TF uniquely balances high DC gain at high current, verified 125 MHz f_T, and tightly specified V_CE(sat) - making it optimal for compact, low-power, medium-speed Darlington switching where base drive current must be minimized.

Availability

KSP63TF is available at Aetrix Electronics and suitable for relay drivers, sensor interfaces, LED regulators, and industrial logic level shifters requiring stable component supply across long-lifecycle embedded programs.

Supply support for KSP63TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based analog and discrete semiconductor manufacturer, acquired by ON Semiconductor in 2016; known for high-reliability bipolar, MOSFET, and optoelectronic products.

The KSP63TF belongs to Fairchild's legacy KSP62/63/64 Darlington transistor family, designed specifically for cost-sensitive, through-hole mounted switching and amplification in industrial controls and instrumentation.

FAQ

What is the pin configuration of the KSP63TF?

The KSP63TF uses standard TO-92 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This arrangement is confirmed in Fairchild's Rev. A2 datasheet and matches JEDEC TO-92 mechanical drawings. The KSP63TF must be mounted with correct orientation to avoid reverse bias damage or unintended conduction paths in circuit layout.

What is the maximum collector current rating for the KSP63TF?

The KSP63TF has a continuous collector current rating of -500 mA at T_A = 25 °C. Derating is required above ambient temperature - approximately 5.0 mA/°C reduction beyond 25 °C - to maintain junction temperature below 150 °C. Pulse current may reach higher values under strict duty cycle and pulse width limits per datasheet conditions.

Does the KSP63TF have a specified current gain bandwidth product?

Yes, the KSP63TF has a specified f_T of 125 MHz, measured at V_CE = -5 V, I_C = -100 mA, and f = 100 MHz. This value is explicitly listed in the "Electrical Characteristics" table of the Fairchild KSP62/63/64 datasheet and applies to the KSP63TF variant within the family.

What is the typical V_CE(sat) for the KSP63TF under full-load conditions?

The KSP63TF exhibits V_CE(sat) ≤ -1.5 V when operated at I_C = -100 mA and I_B = -0.1 mA, per the datasheet's "Electrical Characteristics" table. This saturation voltage remains stable across production lots and supports efficient power delivery in relay and LED driver applications without excessive heat generation.

Is the KSP63TF suitable for linear amplification applications?

Yes, the KSP63TF supports linear operation with verified h_FE ≥ 5,000 at I_C = -100 mA and V_CE = -5 V, and low leakage (I_CBO ≤ -100 nA). Its f_T of 125 MHz and controlled V_BE(on) behavior make it appropriate for low-frequency analog amplification, such as sensor signal buffering and emitter-follower impedance transformation in industrial signal chains.

KSP63TF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 10000 @ 100mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 125MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

KSP63TF FAQ

1.How can I place an order for KSP63TF through Aetrix?

Please submit a Request for Quotation (RFQ) for KSP63TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSP63TF reliable?

The price and inventory of KSP63TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSP63TF is usually 5 days.

3.What payment methods are accepted for KSP63TF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSP63TF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSP63TF?

KSP63TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSP63TF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSP63TF?

For technical support, including KSP63TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSP63TF requirements.

6.How does Aetrix verify that KSP63TF is sourced from the original manufacturer or authorized distributors?

All KSP63TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSP63TF meets industry standards.

7.What is the process for return or replacement of KSP63TF?

All KSP63TF units undergo pre-shipment inspection (PSI). If there is an issue with KSP63TF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSP63TF part is unused and in its original packaging.

Return procedure for KSP63TF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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