STMicroelectronics LD56020J180R

Overview

LD56020J180R from STMicroelectronics is a 1.8 V, 200 mA ultra-low-noise low-dropout (LDO) voltage regulator in Flip-chip4 (0.65 × 0.65 mm²) package, featuring 190 mV max dropout at full load, ±2% output accuracy over temperature, and 8.8 µV_RMS output noise (10 Hz–100 kHz). It powers noise-sensitive RF modules and image sensors in space-constrained mobile devices.

For engineers reviewing the LD56020J180R datasheet, LD56020J180R pinout, LD56020J180R application, or LD56020J180R equivalent, key selection criteria include ultra-low quiescent current (18 µA typ. at no load), logic-controlled shutdown (<0.1 µA off-state), active output discharge, and stability with 0.7–1 µF ceramic capacitors.

Technical Context

The LD56020J180R implements a PMOS pass transistor architecture enabling ultra-low dropout and high PSRR (95 dB at 1 kHz). Its internal bandgap reference and error amplifier deliver ±2% output tolerance across –40 °C to 125 °C junction temperature, with thermal shutdown activation at 160 °C and 20 °C hysteresis.

It integrates an enable input with internal 1 MΩ pull-down, supporting logic-level control (VEN < 0.2 V for OFF, > 0.7 V for ON), and features active discharge of VOUT upon disable-critical for fast power sequencing in multi-rail systems.

Key Specifications

Pinout & Package

LD56020J180R is packaged in Flip-chip4 (0.65 × 0.65 mm²), requiring solder connection of the exposed pad to GND for thermal and electrical integrity. The marking view shows "L4" as top-side identifier.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6210B182MR-G and ADP160ACBZ-1.8-R7, LD56020J180R uniquely balances ultra-small Flip-chip4 size, 190 mV dropout, and 8.8 µV_RMS noise-making it optimal for next-gen mobile and automotive vision systems where board area, efficiency, and spectral purity are co-constrained.

Availability

LD56020J180R is available at Aetrix Electronics and suitable for smartphone camera modules, RF transceiver power rails, wearable health sensor hubs, and automotive cabin cameras requiring stable component supply with guaranteed long-term manufacturability.

Supply support for LD56020J180R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensing solutions for industrial, automotive, and consumer markets.

The LD56020 series belongs to ST's ultra-low-noise LDO portfolio, engineered specifically for powering noise-critical analog circuitry in battery-powered portable electronics and RF subsystems.

FAQ

What is the minimum input voltage required for LD56020J180R to regulate 1.8 V output at 200 mA?

The minimum input voltage is determined by dropout: at 200 mA load, max dropout is 190 mV, so VIN must be ≥ 1.99 V (1.8 V + 0.19 V) to maintain regulation. Below this, output collapses linearly with VIN. The device operates down to 1.1 V input but cannot regulate 1.8 V below ~1.99 V under full load.

Can LD56020J180R be used without an output capacitor?

No. An output capacitor (0.7–10 µF, ESR 5–500 mΩ) is mandatory for stability per Table 5. Omitting it causes oscillation and potential device failure. Ceramic X5R/X7R types are recommended; tantalum or aluminum electrolytics are not suitable due to ESR and aging effects.

Does the NC pin require PCB routing or grounding?

The NC pin is not internally connected and has no electrical function. It may be left unconnected or tied to GND-neither choice affects performance. ST's datasheet explicitly states it can be connected to GND without consequence, simplifying layout in dense flip-chip designs.

How does the active discharge function behave during shutdown?

When EN is pulled low, the internal discharge FET activates within 10 µs, sinking current from VOUT to GND until VOUT falls below ~0.2 V. This discharges output capacitance faster than passive bleed resistors, enabling precise power sequencing and eliminating residual voltage that could cause latch-up in downstream logic.