STMicroelectronics LD56020M180R

Overview

LD56020M180R from STMicroelectronics is a high-accuracy, 200 mA ultra-low-noise LDO voltage regulator delivering a fixed 1.8 V output with ±2% tolerance over temperature, 190 mV max dropout at 200 mA, and 8.8 µVRMS output noise (10 Hz–100 kHz). It operates from 1.1 V to 5.5 V input and features logic-controlled shutdown, thermal protection, and active output discharge - optimized for image sensor and RF module power rails in space-constrained mobile devices.

For engineers reviewing the LD56020M180R datasheet, LD56020M180R pinout, LD56020M180R application, or LD56020M180R equivalent, key selection criteria include ultra-low dropout under 200 mA load, sub-25 µA quiescent current at no load, stable operation with 1 µF ceramic capacitors, and dual-package availability (SOT23-5L and Flip-chip4) for PCB area optimization.

Technical Context

The LD56020M180R implements a PMOS pass transistor architecture enabling ultra-low dropout and near-zero reverse current during shutdown. Its internal bandgap reference and error amplifier maintain tight output regulation across -40 °C to 125 °C junction temperature, with line regulation of ≤0.1 %/V and load regulation of ≤5 mV (CSP) or ≤20 mV (SOT23-5L) from 1 mA to 200 mA.

Enable control is implemented via a CMOS-compatible EN pin with internal 1 MΩ pull-down, allowing total shutdown current <0.1 µA. Thermal shutdown activates at 160 °C with 20 °C hysteresis, and short-circuit foldback limits peak current to 100–300 mA depending on temperature and output voltage.

Key Specifications

Pinout & Package

LD56020M180R is available in SOT23-5L (2.92 mm × 2.80 mm × 1.10 mm) and Flip-chip4 (0.69 mm × 0.69 mm × 0.25 mm) packages. Both require the exposed pad to be connected to GND for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6210B182MR-G and ADP125ARHZ-1.8-R7, LD56020M180R uniquely combines ultra-low noise, active discharge, and logic-enable in both SOT23-5L and chip-scale packages - making it optimal for battery-powered imaging and RF subsystems requiring dynamic power management and thermal safety.

Availability

LD56020M180R is available at Aetrix Electronics and suitable for smartphone image sensor power, RF VCO biasing, and wearable health sensor hub applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for LD56020M180R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The LD56020 belongs to ST's high-precision, ultra-low-noise LDO family targeting battery-powered portable electronics where power integrity, size, and thermal behavior are critical constraints.

FAQ

What is the minimum input voltage required for LD56020M180R to regulate 1.8 V at 200 mA?

The minimum input voltage is calculated as VOUT + VDROP = 1.8 V + 0.19 V = 1.99 V. The device guarantees regulation down to this level per datasheet Table 4, with margin up to 5.5 V input. Below 1.99 V, output follows input (dropout mode), and below 1.1 V, the internal circuitry may not operate reliably.

Can LD56020M180R be used without an output capacitor?

No. An output capacitor ≥0.7 µF with ESR between 5 mΩ and 500 mΩ is mandatory for stability, as confirmed in Table 5 and Figure 23 (stability plane). Omitting COUT causes oscillation and potential damage; ceramic X5R/X7R types are recommended.

Does the NC pin on LD56020M180R require PCB connection?

The NC pin (Pin 4 in SOT23-5L) is not internally connected and has no electrical function. Per ST's recommendation in Table 1, it may be left unconnected or tied to GND for mechanical reinforcement - neither choice affects regulation, noise, or thermal performance.

How does the active output discharge function behave during shutdown?

When EN is pulled low, the internal discharge FET activates after VOUT drops below ~1.2 V, sinking current to bring VOUT to GND within ~100 µs (typical). This prevents unintended wake-up from floating rails and ensures deterministic power-down sequencing in multi-voltage systems.