STMicroelectronics LD56050DPU110R

Overview

LD56050DPU110R from STMicroelectronics is a 500 mA ultra-low-dropout linear voltage regulator with NMOS pass transistor, bias supply pin (VBIAS), and active output discharge. It delivers 1.10 V output with ±1.5% tolerance over temperature, 80 mV typical dropout at 500 mA, and 27 µA no-load ground current. Designed for space-constrained battery-powered systems such as mobile phones and camera modules.

For engineers reviewing the LD56050DPU110R datasheet, LD56050DPU110R pinout, LD56050DPU110R application, or LD56050DPU110R equivalent, key selection criteria include bias-supply-enabled ultra-low-drop performance, thermal shutdown behavior, EN-controlled shutdown current (<0.1 µA), and DFN4 1.2×1.2 mm package compatibility with ceramic output capacitors ≥1.0 µF.

Technical Context

The LD56050DPU110R uses an NMOS pass element whose gate is driven by a dedicated VBIAS pin-enabling stable regulation even when VIN approaches VOUT (e.g., 1.35 V input for 1.10 V output). This architecture achieves 80 mV dropout at full 500 mA load and supports bias voltages as low as VOUT + 1.4 V (≥2.5 V for 1.10 V output).

It integrates logic-controlled enable (EN), internal current limiting with foldback, thermal shutdown at 160 °C (20 °C hysteresis), and an output discharge MOSFET (RON = 110 Ω) activated during shutdown. Stability is ensured with ≥1.0 µF X5R/X7R ceramic output capacitance and ESR between 3–300 mΩ.

Key Specifications

Pinout & Package

LD56050DPU110R is housed in a thermally enhanced DFN4 1.2 × 1.2 mm package (0.45 mm height, 4-pin, exposed thermal pad), compatible with standard reflow profiles and optimized for high-density portable PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.

Compared with XC6210B112MR-G and RT9080L-11PUF, the LD56050DPU110R uniquely combines 500 mA capability, 80 mV dropout, and VBIAS-enabled ultra-low-input operation - making it irreplaceable in high-efficiency, space-constrained mobile power designs requiring guaranteed 1.10 V accuracy under dynamic load and thermal stress.

Availability

LD56050DPU110R is available at Aetrix Electronics and suitable for mobile phone core rails, camera module power, and wearable battery management systems requiring stable component supply, long-lifecycle support, and RoHS-compliant DFN packaging.

Supply support for LD56050DPU110R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and analog devices for automotive, industrial, and consumer markets.

The LD56050 series belongs to ST's high-accuracy, ultra-low-dropout LDO portfolio, engineered specifically for battery-powered portable electronics demanding minimal voltage headroom, nanoscale quiescent current, and robust protection features.

FAQ

What is the minimum required VBIAS voltage for LD56050DPU110R?

The minimum VBIAS voltage is VOUT + 1.4 V, which equals 2.5 V for the 1.10 V output version. This ensures proper gate biasing of the NMOS pass transistor. If VIN meets this condition, VBIAS may be tied directly to VIN; otherwise, a separate low-noise bias source is required.

Can LD56050DPU110R operate with input voltage below 1.10 V?

No. The absolute minimum operating input voltage is VOUT + VDROP, and the datasheet specifies VIN must be ≥VOUT + 0.3 V for functional operation. With 80 mV typical dropout, the practical lower limit is ~1.18 V input to sustain regulated 1.10 V output at 500 mA.

Is an external resistor needed for the EN pin?

Yes. The EN pin has no internal pull-up; leaving it floating risks undefined operation. A pull-up resistor to VIN or VBIAS (typically 100 kΩ) is required to ensure reliable startup. Driving EN directly from a GPIO is also valid, provided logic levels meet VIL ≤ 0.4 V and VIH ≥ 0.9 V.

Does the output discharge function require external components?

No. The 110 Ω discharge MOSFET is fully integrated. When EN is pulled low, the internal switch automatically connects VOUT to GND, discharging the output capacitor without external circuitry. No additional resistors or FETs are needed - simplifying layout and reducing BOM count.