STMicroelectronics LD56050DPU120R

Overview

LD56050DPU120R from STMicroelectronics is a 500 mA ultra-low-dropout linear voltage regulator with NMOS pass transistor architecture, bias supply pin (VBIAS), and active output discharge. It delivers 1.20 V output with ±0.5% accuracy at 25 °C and ±1.5% over temperature, 80 mV typical dropout at 500 mA, and 27 µA typical ground current at no load. Designed for space-constrained battery-powered systems including mobile phones and camera modules.

For engineers reviewing the LD56050DPU120R datasheet, LD56050DPU120R pinout, LD56050DPU120R application, or LD56050DPU120R equivalent, key selection considerations include VBIAS pin voltage requirements (≥VOUT + 1.4 V), logic-controlled shutdown (<0.1 µA standby), thermal foldback protection, and DFN4 1.2 × 1.2 mm package compatibility with ceramic output capacitors ≥1.0 µF.

Technical Context

The LD56050DPU120R uses an NMOS pass transistor driven by a dedicated VBIAS pin, enabling ultra-low dropout operation even when VIN approaches VOUT - critical for single-cell Li-ion or Li-poly systems. Its internal reference and error amplifier maintain tight output regulation across load (1 mA to 500 mA), temperature (−40 °C to +85 °C), and input line variations.

It integrates multiple protection functions: thermal shutdown at 160 °C (20 °C hysteresis), short-circuit foldback limiting ISC to 365–500 mA, and an output discharge MOSFET (RON = 110 Ω) activated during EN low. The VBIAS supply must exceed VOUT by ≥1.4 V (or ≥2.4 V absolute) to ensure proper gate drive and dropout performance.

Key Specifications

Pinout & Package

LD56050DPU120R is housed in a thermally enhanced DFN4 1.2 × 1.2 mm package (0.45 mm height, 0.8 mm pitch), optimized for high-density PCB layouts and efficient heat dissipation in thin-profile portable electronics.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.

Compared with XC6210B122MR-G and ADP125ARHZ-1.2-R7, LD56050DPU120R uniquely combines 500 mA capability, 80 mV dropout, and VBIAS-enabled operation below 1.3 V input - making it the sole option for high-current, ultra-low-VIN battery systems requiring active discharge and thermal foldback.

Availability

LD56050DPU120R is available at Aetrix Electronics and suitable for mobile phones, tablet camera modules, and battery-powered IoT nodes requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for LD56050DPU120R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and analog components for automotive, industrial, and consumer markets.

The LD56050 belongs to ST's high-accuracy, ultra-low-dropout LDO product line, engineered specifically for space- and power-constrained portable electronics where extended battery life, thermal resilience, and precise voltage regulation are critical.

FAQ

What is the minimum required VBIAS voltage for LD56050DPU120R at 1.20 V output?

The minimum VBIAS voltage is VOUT + 1.4 V = 2.6 V, with an absolute minimum of 2.4 V. At 25 °C and 500 mA load, VBIAS must be ≥2.6 V to guarantee 80 mV dropout performance. If VIN meets this requirement, VBIAS may be tied directly to VIN; otherwise, a separate bias rail is needed.

Can LD56050DPU120R operate with a 1.0 µF output capacitor?

Yes - the LD56050DPU120R is designed to be stable with any good-quality ceramic capacitor ≥1.0 µF (X5R/X7R recommended), provided its ESR stays within 3–300 mΩ across temperature and bias. A 2.2 µF capacitor is used in the typical application circuit to improve transient response and margin.

How does the output discharge function behave during shutdown?

When EN is driven low, the internal 110 Ω discharge MOSFET connects VOUT to GND, actively sinking current to discharge the output capacitor. This occurs within microseconds and eliminates residual voltage that could interfere with downstream power sequencing or cause latch-up in connected logic.

Is thermal shutdown reversible, and what is its hysteresis?

Yes - thermal shutdown is fully reversible. The device disables output when junction temperature reaches 160 °C (typical) and resumes normal operation once temperature falls below 140 °C, yielding a 20 °C hysteresis. This prevents oscillation during thermal overload conditions and protects against sustained overtemperature stress.