STMicroelectronics LD56050DPU150R

Overview

LD56050DPU150R from STMicroelectronics is a 500 mA ultra-low-dropout linear voltage regulator with NMOS pass transistor architecture, bias supply pin (VBIAS), and active output discharge. It delivers 1.50 V output at ±1.5% tolerance over temperature, achieves 80 mV dropout at 500 mA, and draws only 27 µA quiescent current-optimized for space-constrained, battery-powered mobile and camera systems.

For engineers reviewing the LD56050DPU150R datasheet, LD56050DPU150R pinout, LD56050DPU150R application, or LD56050DPU150R equivalent, key selection criteria include bias-supply-enabled ultra-low dropout performance, thermal shutdown at 160 °C, logic-controlled shutdown (<0.1 µA standby), and DFN4 1.2 × 1.2 mm footprint compatibility with ceramic output capacitors ≥1.0 µF.

Technical Context

The LD56050DPU150R uses an NMOS pass transistor whose gate is driven by a dedicated VBIAS pin-enabling stable regulation down to VIN = VOUT + 80 mV while decoupling control circuitry power from the main input rail. This architecture separates bias supply requirements (≥2.4 V or VOUT + 1.6 V) from VIN, allowing operation with sub-1.5 V inputs when VBIAS is independently supplied.

It integrates foldback current limiting (ISC = 365–500 mA at VOUT = 0), thermal shutdown with 20 °C hysteresis, and an internal discharge MOSFET (RON = 110 Ω) activated on EN low. Stability is ensured with X5R/X7R ceramic capacitors (COUT ≥ 1.0 µF, ESR 3–300 mΩ) without requiring external compensation.

Key Specifications

Pinout & Package

LD56050DPU150R is housed in a thermally enhanced DFN4 1.2 × 1.2 mm package (0.45 mm height, 4-pin, exposed thermal pad). The package supports high-density placement and efficient heat dissipation via PCB copper area under the pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.

Compared with XC6210B152MR-G and RT9080L-15GJ5, LD56050DPU150R uniquely combines VBIAS-enabled ultra-low dropout, integrated discharge, and 20 °C thermal hysteresis - making it optimal for space-constrained, multi-rail battery systems demanding precise sequencing and long runtime.

Availability

LD56050DPU150R is available at Aetrix Electronics and suitable for mobile phones, tablets, and battery-powered IoT nodes requiring stable component supply, consistent parametric performance across temperature, and long-term manufacturing continuity.

Supply support for LD56050DPU150R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and analog components for automotive, industrial, and consumer markets.

LD56050DPU150R belongs to ST's high-accuracy, ultra-low-IQ LDO portfolio targeting portable electronics - engineered specifically to extend battery life and simplify power architecture in space- and noise-constrained designs.

FAQ

What is the minimum required VBIAS voltage for LD56050DPU150R at 1.50 V output?

The minimum VBIAS voltage is 2.4 V or VOUT + 1.4 V (i.e., 2.9 V), whichever is greater. At 1.50 V output, VBIAS must be ≥2.9 V to ensure proper NMOS gate drive and ultra-low-dropout operation. If VIN ≥2.9 V, VBIAS may be tied directly to VIN; otherwise, a separate ≥2.9 V bias source is required.

Can LD56050DPU150R operate with a 1.2 V input supply?

No. The absolute minimum operating input voltage is VOUT + VDROP, and with VOUT = 1.50 V, even the best-case 80 mV dropout requires VIN ≥1.58 V. At 1.2 V input, the device cannot regulate - it will either drop out completely or fail to start up, as VIN falls below the required headroom for both pass element and internal circuitry.

Is an external discharge resistor needed when using the integrated output discharge function?

No. The LD56050DPU150R includes an internal MOSFET (RON = 110 Ω) between VOUT and GND that activates automatically when EN is pulled low. This eliminates the need for external discharge resistors, reducing BOM count and PCB area while ensuring predictable, rapid discharge (<250 µs for 2.2 µF).

What output capacitor ESR range ensures stability for LD56050DPU150R?

The control loop is designed for stability with ceramic capacitors (X5R/X7R) having ESR between 3 mΩ and 300 mΩ. Capacitance must remain ≥1.0 µF across –40 °C to +85 °C and full load range. Avoid Y5V or Z5U dielectrics due to excessive capacitance/ESR drift with temperature and bias voltage.