NXP Semiconductors LD6806F/25P,115

Overview

LD6806F/25P,115 from NXP Semiconductors is a 2.5 V, 200 mA ultra-low-dropout linear regulator in SOT886 (XSON6) package with 80 mV typical dropout at full load, 30 µV_RMS output noise (10 Hz–100 kHz), and active-HIGH enable pin. It features low-ohmic pull-down during disable, thermal shutdown, overcurrent protection, and is optimized for space-constrained mobile power rails including baseband processors and RF transceivers.

For engineers reviewing the LD6806F/25P,115 datasheet, LD6806F/25P,115 pinout, LD6806F/25P,115 application, or LD6806F/25P,115 equivalent, key selection criteria include its 2.5 V fixed output, 2.3–5.5 V input range, 220 K/W junction-to-ambient thermal resistance, 200 µs startup time, and compatibility with 1 µF X7R ceramic output capacitors.

Technical Context

The LD6806F/25P,115 implements a PMOS pass transistor architecture enabling ultra-low dropout voltage and stable operation with minimal external capacitance. Its internal reference generator, error amplifier, and thermal watchdog operate independently of enable state, ensuring predictable behavior across temperature (−40 °C to +85 °C ambient) and load (1–200 mA).

Unlike the H-suffix variants, the P-suffix enables active pull-down via an integrated 100 Ω switch on the OUT pin when EN is low - critical for preventing back-powering in multi-rail systems. PSRR remains at −55 dB @ 1 kHz under 30 mA load, supporting noise-sensitive analog circuitry.

Key Specifications

Pinout & Package

SOT886 (XSON6) plastic extremely thin small outline package, no leads, 6-terminal, body size 1.0 mm × 1.45 mm × 0.5 mm, Pb-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700-2502E/TO and XC6206P252MR-G, the LD6806F/25P,115 delivers superior dropout performance (80 mV vs ≥120 mV), lower noise (30 µV_RMS), integrated thermal/overcurrent protection, and active pull-down - making it optimal for compact, thermally constrained, and multi-rail mobile systems.

Availability

LD6806F/25P,115 is available at Aetrix Electronics and suitable for mobile handset power management, RF module biasing, and IoT sensor node core supply requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for LD6806F/25P,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The LD6806 series was designed specifically for miniaturized portable electronics, delivering ultra-low-noise, low-dropout regulation in wafer-level and leadless packages to meet stringent space and power-efficiency demands of modern mobile platforms.

FAQ

What is the maximum input voltage rating for LD6806F/25P,115?

The absolute maximum input voltage on the IN pin of LD6806F/25P,115 is +6.0 V for transient events up to 4 ms. For continuous operation, the recommended input range is 2.3 V to 5.5 V. Exceeding 6.0 V risks permanent damage, and operation below 2.3 V may prevent regulation at 2.5 V output. The LD6806F/25P,115 must be used within these boundaries to ensure reliability and specified performance.

Does LD6806F/25P,115 require an external output capacitor, and what type is recommended?

Yes, LD6806F/25P,115 requires a minimum 1.0 µF X7R ceramic capacitor on the OUT pin for stability and correct operation. The capacitor must have ESR between 5 mΩ and 500 mΩ. Using less than 0.7 µF or non-X7R dielectrics (e.g., Y5V) may cause oscillation or poor transient response. The LD6806F/25P,115 datasheet specifies this requirement to guarantee startup, load regulation, and noise performance.

How does the pull-down function work on LD6806F/25P,115 during disable?

When the EN pin is driven LOW (<0.4 V), LD6806F/25P,115 activates an internal 100 Ω NMOS switch between OUT and GND, pulling the output to near-ground potential. This prevents back-powering of upstream sources or unintended biasing of downstream ICs. The LD6806F/25P,115 is unique among its family in providing this low-ohmic discharge path - the H-suffix variants instead enter high-impedance state.

What is the thermal resistance (R_th(j-a)) of LD6806F/25P,115, and how does it affect layout?

The typical junction-to-ambient thermal resistance of LD6806F/25P,115 in SOT886 package is 220 K/W under standard two-layer PCB conditions. To achieve this, all pins - especially GND and OUT - must connect to large copper areas or internal planes. Vias under the exposed pad (if present) and thermal relief minimization are critical. Poor layout can raise R_th(j-a) significantly, risking thermal shutdown above 125 °C junction temperature.

Can LD6806F/25P,115 be used with a 1.8 V logic enable signal?

Yes, LD6806F/25P,115 supports 1.8 V logic levels on the EN pin: its V_IH threshold is guaranteed ≥1.4 V, and V_IL is ≤0.4 V. A 1.8 V GPIO driving EN will reliably enable the device, while keeping EN ≤0.4 V ensures full disable with 0.1 µA shutdown current. This compatibility makes LD6806F/25P,115 suitable for direct interfacing with modern low-voltage microcontrollers without level-shifting.