NXP Semiconductors LD6806F/30H,115

Overview

LD6806F/30H,115 from NXP Semiconductors is a 3.0 V, 200 mA ultra-low-dropout linear regulator in SOT886 (XSON6) package with 80 mV typical dropout at full load, 30 µV RMS output noise (10 Hz–100 kHz), and active-HIGH enable control - designed for power-sensitive mobile interfaces requiring stable low-noise bias in space-constrained applications like smartphone baseband ICs and PMIC sub-regulators.

For engineers reviewing the LD6806F/30H,115 datasheet, LD6806F/30H,115 pinout, LD6806F/30H,115 application, or LD6806F/30H,115 equivalent, key selection criteria include its high-ohmic (3-state) output during disable, thermal shutdown at 160 °C, ±0.5 % output voltage accuracy at +25 °C, and compatibility with 1 µF X7R ceramic output capacitors per NXP's stability requirements.

Technical Context

The LD6806F/30H,115 implements a P-channel MOSFET pass transistor architecture enabling ultra-low dropout operation down to 80 mV at 200 mA, with integrated thermal protection (160 °C trip, 20 K hysteresis) and overcurrent limiting. Its bandgap reference and error amplifier deliver tight line/load regulation across −40 °C to +85 °C ambient.

Unlike the P-suffix variants, the H-suffix device features a high-impedance output stage when disabled (EN < 0.4 V), eliminating backfeed and supporting rail isolation in multi-rail systems. The enable threshold is independent of input voltage, with VIH ≥ 1.4 V and VIL ≤ 0.4 V.

Key Specifications

Pinout & Package

SOT886 (XSON6) plastic extremely thin small outline package, no leads, 6 terminals, body size 1.0 mm × 1.45 mm × 0.5 mm, Pb-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6219B302MR-G and RT9013-30GB, LD6806F/30H,115 delivers superior low-noise performance (30 µV vs. ≥45 µV), lower dropout (80 mV vs. ≥150 mV), and guaranteed high-ohmic disable - making it optimal for noise-critical, space-constrained, and multi-rail-isolation applications.

Availability

LD6806F/30H,115 is available at Aetrix Electronics and suitable for mobile handset power management, wearable audio subsystems, and IoT edge node designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for LD6806F/30H,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The LD6806 series was developed specifically for miniaturized portable electronics requiring ultra-low-noise, ultra-low-dropout regulation in wafer-level and leadless packages - targeting mobile phone handsets, cordless telephones, and personal digital assistants.

FAQ

What is the maximum input voltage rating for LD6806F/30H,115?

The absolute maximum input voltage on the IN pin of LD6806F/30H,115 is +6.0 V for 4 ms transients, with recommended continuous operation between 2.3 V and 5.5 V. Exceeding 6.0 V risks permanent damage, and operation below 2.3 V prevents regulation at 3.0 V output due to dropout constraints. Always verify input rail margins against worst-case battery or DC-DC output conditions.

Does LD6806F/30H,115 require an external output capacitor, and what type is specified?

Yes, LD6806F/30H,115 requires a minimum 1.0 µF X7R ceramic output capacitor placed adjacent to the OUT pin for stability, as confirmed in Table 11 and Section 10.1 of the datasheet. Capacitor tolerance must be ±30 % or better over −40 °C to +125 °C, and ESR must remain between 5 mΩ and 500 mΩ. Smaller values (e.g., 0.7 µF) may cause instability or excessive overshoot during load transients.

What is the thermal resistance (R_th(j-a)) of LD6806F/30H,115 in its SOT886 package?

The typical junction-to-ambient thermal resistance (R_th(j-a)) for LD6806F/30H,115 in SOT886 package is 220 K/W under standard two-layer PCB conditions (per Table 9). Actual performance depends heavily on PCB copper area and via count beneath pins 1 (OUT) and 3 (GND); adding thermal vias to inner ground planes can reduce effective R_th(j-a) by up to 40 %.

How does the high-ohmic output behavior of LD6806F/30H,115 improve system-level power integrity?

When disabled (EN ≤ 0.4 V), LD6806F/30H,115 places its OUT pin in a high-impedance state - preventing backfeed from downstream circuits into the LDO output or other rails. This eliminates unintended current paths in multi-supply systems, avoids false wake-ups in sleep modes, and removes the need for external blocking diodes or MOSFETs in complex power sequencing architectures.

Is LD6806F/30H,115 compatible with lead-free reflow processes?

Yes, LD6806F/30H,115 is fully compatible with lead-free reflow soldering per J-STD-020C. Its SOT886 package falls under the <1.6 mm thickness / <350 mm³ volume category, requiring a peak reflow temperature of 260 °C. Moisture sensitivity level (MSL) must be observed - refer to NXP's packaging label and AN10439 for bake and handling guidelines prior to assembly.