NXP Semiconductors LD6806F/30P,115

Overview

LD6806F/30P,115 from NXP Semiconductors is a 3.0 V, 200 mA ultra-low-dropout linear regulator in SOT886 (XSON6) package with 80 mV dropout at full load, 30 µV RMS output noise, and active-HIGH enable pin. It features integrated thermal shutdown, current limiting, and 10 kV HBM ESD protection, designed for power-sensitive mobile applications including smartphone baseband processors and PMIC subsystems.

For engineers reviewing the LD6806F/30P,115 datasheet, LD6806F/30P,115 pinout, LD6806F/30P,115 application, or LD6806F/30P,115 equivalent, key selection criteria include its low-noise regulation under dynamic load, fast 200 µs startup time, pull-down output stage during disable, and compatibility with 1 µF X7R ceramic output capacitors in space-constrained layouts.

Technical Context

The LD6806F/30P,115 uses a monolithic silicon LDO architecture with internal reference generator, error amplifier, and P-channel pass transistor. Its low-ohmic pull-down switch (Rpd = 100 Ω) actively discharges the output during disable, preventing floating rail conditions in multi-rail systems.

It operates across −40 °C to +85 °C ambient, supports input voltages from 2.3 V to 5.5 V, and maintains ±0.5% output accuracy at 25 °C with 3% total variation over temperature and load. PSRR of −55 dB at 1 kHz enables clean supply for RF and audio circuitry.

Key Specifications

Pinout & Package

SOT886 (XSON6) package: plastic extremely thin small outline, no leads, 6-terminal, body size 1.0 mm × 1.45 mm × 0.5 mm, lead-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1703-3002E/MB and XC6219B302MR-G, LD6806F/30P,115 delivers superior dropout performance (80 mV vs. ≥160 mV), integrated pull-down for deterministic power-down, and full thermal/current protection-making it optimal for high-reliability, space-constrained mobile power rails.

Availability

LD6806F/30P,115 is available at Aetrix Electronics and suitable for smartphone baseband power, wearable sensor hubs, portable audio codecs, and IoT edge node PMIC subsystems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for LD6806F/30P,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and mobile markets.

The LD6806 series belongs to NXP's ultra-low-noise, miniaturized LDO portfolio, engineered specifically for power integrity in battery-operated handheld devices where board space, thermal headroom, and supply cleanliness are critical constraints.

FAQ

What is the maximum input voltage rating for LD6806F/30P,115?

The absolute maximum input voltage for LD6806F/30P,115 is +6.0 V for 4 ms transients, with recommended continuous operation between 2.3 V and 5.5 V. Exceeding 5.5 V continuously risks exceeding junction temperature limits and triggering thermal shutdown. The device's 80 mV dropout at 200 mA means it can regulate 3.0 V output down to VIN = 3.08 V, optimizing battery utilization in single-cell Li-ion systems.

Does LD6806F/30P,115 require an external output capacitor, and what type is recommended?

Yes, LD6806F/30P,115 requires a minimum 1.0 µF X7R ceramic capacitor at the output for stability, with ESR between 5 mΩ and 500 mΩ. The datasheet specifies X7R dielectric to ensure capacitance retention across −40 °C to +125 °C. Using a lower-value or non-X7R capacitor may cause oscillation or degraded load transient response. Input capacitance is also recommended-typically another 1.0 µF ceramic placed close to the IN pin.

How does the pull-down function operate in LD6806F/30P,115 during disable?

When the EN pin is driven LOW (<0.4 V), LD6806F/30P,115 disables regulation and activates an internal 100 Ω NMOS pull-down transistor between OUT and GND. This actively discharges the output node, ensuring rapid, controlled collapse of VOUT to near-zero volts-preventing floating rails that could cause latch-up in downstream logic or analog circuits. Shutdown time is specified at 300 µs with 1 µF load capacitance.

What is the thermal resistance (Rth(j-a)) of LD6806F/30P,115, and how does it affect power dissipation?

The typical thermal resistance from junction to ambient for LD6806F/30P,115 in SOT886 package is 220 K/W. At 200 mA load and 3.0 V output with 5.5 V input, power dissipation is (5.5 − 3.0) V × 0.2 A = 500 mW, resulting in ~110 °C junction rise above ambient. With max Tj = +125 °C, this limits usable ambient temperature to ~15 °C unless PCB copper area is increased. Layout best practices include connecting all pins-especially GND-to large copper pours and using thermal vias.

Is LD6806F/30P,115 compatible with lead-free reflow soldering processes?

Yes, LD6806F/30P,115 is fully compatible with lead-free reflow soldering per J-STD-020C. Its SOT886 package falls into the <350 mm³ volume category and <1.6 mm thickness class, requiring a peak reflow temperature of 260 °C. Moisture sensitivity level (MSL) is not specified in the provided datasheet, but NXP WLCSP packages are MSL-1; for SOT886, standard dry-pack handling applies. Reflow profile must include controlled ramp-up, soak, and cooling phases to avoid delamination or voiding.