NXP Semiconductors LD6806TD/25P,125

Overview

LD6806TD/25P,125 from NXP Semiconductors is a 2.5 V, 200 mA ultra-low-dropout linear regulator in SOT753 (TSOP5) package with 80 mV typical dropout at full load, 30 µV_RMS output noise (10 Hz–100 kHz), and active-HIGH enable pin-designed for power-sensitive mobile handset and media player subsystems requiring stable low-noise bias.

For engineers reviewing the LD6806TD/25P,125 datasheet, LD6806TD/25P,125 pinout, LD6806TD/25P,125 application, or LD6806TD/25P,125 equivalent, key selection criteria include its low-ohmic pull-down output stage during disable, thermal shutdown at 160 °C, ±0.5 % output voltage accuracy at +25 °C, and compatibility with 1 µF X7R ceramic output capacitors.

Technical Context

The LD6806TD/25P,125 integrates a PMOS pass transistor with internal reference generator, overcurrent protection, and thermal watchdog circuitry. Its enable input (VEN) has defined VIH ≥1.4 V and VIL ≤0.4 V, independent of VIN, supporting direct interfacing with 1.8 V/3.3 V logic.

Unlike the H-variant, the P-suffix device includes an integrated pull-down transistor (Rpd = 100 Ω typ) that actively discharges the output to GND during shutdown-critical for preventing floating nodes in multi-rail systems and enabling fast, controlled power sequencing.

Key Specifications

Pinout & Package

SOT753 (TSOP5) plastic surface-mounted package: 3.0 mm × 2.5 mm × 1.1 mm body, gull-wing leads, RoHS-compliant and halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700T-2502E/TT and XC6206P252MR-G, the LD6806TD/25P,125 uniquely combines 2.5 V regulation, SOT753 packaging, active-HIGH enable, and integrated 100 Ω pull-down-enabling simpler, more reliable power sequencing in space-constrained portable electronics without added components.

Availability

LD6806TD/25P,125 is available at Aetrix Electronics and suitable for mobile handset power management, portable audio subsystems, and wearable sensor hub designs requiring stable component supply across high-mix, low-volume production runs.

Supply support for LD6806TD/25P,125 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The LD6806 series was developed specifically for miniaturized portable electronics, emphasizing ultra-low dropout, low noise, and integrated power-control features-including active discharge-to reduce bill-of-materials and PCB area in space-constrained designs.

FAQ

What is the maximum input voltage rating for the LD6806TD/25P,125?

The LD6806TD/25P,125 supports an absolute maximum input voltage of +6.0 V on the IN pin for transient events up to 4 ms. For continuous operation, the recommended input voltage range is 2.3 V to 5.5 V. Exceeding 6.0 V-even briefly-may cause permanent damage. The device's 5.5 V upper limit ensures safe integration with common single-cell Li-ion (4.2 V max) and dual-cell alkaline (3.2 V max) power sources.

Does the LD6806TD/25P,125 require an external output capacitor, and what type is recommended?

Yes, the LD6806TD/25P,125 requires a minimum 1.0 µF X7R ceramic capacitor at the OUT pin for stability and correct operation. The datasheet specifies ESR between 5 mΩ and 500 mΩ. Using a lower-value or higher-ESR capacitor may cause oscillation or degraded transient response. The 1 µF value also directly affects shutdown time (tsd(reg)), so deviation impacts power sequencing timing.

How does the pull-down function operate in the LD6806TD/25P,125 during disable?

When the EN pin is driven LOW (<0.4 V), the LD6806TD/25P,125 activates an internal NMOS pull-down transistor connecting OUT to GND with 100 Ω typical resistance. This discharges the output capacitance to <10 % of 2.5 V within 300 µs, preventing floating voltages that could cause unintended logic states or latch-up in downstream ICs-eliminating the need for external bleed resistors.

What is the output voltage accuracy specification for the LD6806TD/25P,125 across temperature?

The LD6806TD/25P,125 guarantees ±0.5 % output voltage accuracy at +25 °C and ±3 % over the full operating ambient temperature range of −40 °C to +85 °C. This applies to devices with nominal 2.5 V output. Accuracy is measured at IOUT = 1 mA; load regulation adds up to ±0.02 %/mA for SOT753 variants, contributing to total error budget in precision applications.

Is the LD6806TD/25P,125 compatible with lead-free reflow soldering processes?

Yes, the LD6806TD/25P,125 is fully compatible with lead-free reflow soldering per J-STD-020C. Its SOT753 package falls into the <350 mm³ volume category and <1.6 mm thickness class, requiring a peak reflow temperature of 260 °C. Standard Pb-free profiles with preheat, soak, and ramp-to-peak phases are supported; wave soldering is not recommended.