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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

STMicroelectronics LET16045C

Name: LET16045C
Brand: STMicroelectronics
SKU: LET16045C
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: LET16045C

Manufacturer:: STMicroelectronics

Category:: Single FETs, MOSFETs

Package:: M243

Datasheet:: LET16045C.pdf

Description:: RF MOSFET LDMOS 28V M243

Quantity:: RFQ Add To RFQ list

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Product details

Overview

LET16045C from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 80 V drain-source voltage, 9 A continuous drain current, and delivering 45 W output power at 1600 MHz with 16 dB gain under 28 V supply. It features 1.3 °C/W junction-to-case thermal resistance and operates up to 200 °C junction temperature. It is designed for INMARSAT satellite communications transmitters.

For engineers reviewing the LET16045C datasheet, LET16045C pinout, LET16045C application, or LET16045C equivalent, key selection criteria include RF output power at 1600 MHz, thermal resistance in M243 package, gate bias stability, load mismatch tolerance (20:1 VSWR), and BeO-free construction for RoHS compliance.

Technical Context

The LET16045C employs a lateral MOSFET structure optimized for broadband RF amplification up to 1.6 GHz, operating in common-source mode with fixed 400 mA quiescent drain current. Its dynamic performance is characterized by 15–16 dB power gain and 50–55% drain efficiency at 45 W output.

Thermal design is enabled by low R_th(JC) = 1.3 °C/W and a ceramic-metal M243 package with integrated heat slug. Impedance data specifies Z_source = 1.1 − j1.6 Ω and Z_load = 1.1 − j0.6 Ω at 1600 MHz, supporting broadband matching networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	80 V - Maximum drain-source blocking voltage defines safe DC/RF swing headroom
POUT @ 1600 MHz	45 W - RF output power level usable in L-band satellite uplink stages
Gain @ 1600 MHz	16 dB - Small-signal to large-signal conversion ratio enabling single-stage amplification
Rth(JC)	1.3 °C/W - Enables high-power dissipation with moderate heatsink requirements
Load Mismatch	20:1 VSWR - Tolerates severe antenna impedance variations without failure
CISS / COSS	58 pF / 29 pF - Input/output capacitance values critical for broadband matching network design
TJ max	200 °C - High junction temperature rating supports operation in thermally constrained enclosures

Pinout & Package

M243 is a ceramic-metal flanged package with integral heat slug, dimensioned 14.27 mm × 20.57 mm × 4.45 mm (L×W×H), compliant with ECOPACK® environmental standards and BeO-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1. Drain	High-current RF output node	Connected directly to heatsink via metal flange; carries full RF output current
2. Gate	Control electrode	DC-biased input requiring stable −0.5 to +15 V; low IGSS (<1 μA) ensures bias stability
3. Source	Reference and return path	Common RF ground reference; tied to source bond wires and package base for low-inductance return

Key Features

Feature	Design Value
BeO-free packaging	Eliminates beryllium oxide toxicity risk while maintaining thermal conductivity comparable to BeO-ceramic alternatives
Common-source configuration	Enables standard RF amplifier topology with grounded source, simplifying PCB layout and impedance matching
20:1 load mismatch tolerance	Guarantees survivability during antenna detuning or cable faults without protection circuitry
Excellent thermal stability	Stable gain and output power across −65 °C to +150 °C storage and up to 200 °C junction operation

Applications

INMARSAT Satellite Uplink

L-Band Radar Transmitter

Use Scenario: High-reliability maritime and aeronautical mobile satellite terminals transmitting in 1.5–1.6 GHz band.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier driving helical or patch antennas.

Use Value: 45 W output enables >200 km link range with compact antenna systems; 20:1 VSWR tolerance prevents shutdown during antenna motion or sea-spray-induced detuning.

Use Scenario: Short-range surveillance radar operating at 1.6 GHz with pulsed or CW transmission.

IC Role / Device Role / Timing Role: Medium-power RF driver stage feeding higher-power final amplifier or direct radiator.

Use Value: 16 dB gain reduces need for pre-driver stages; 1.3 °C/W thermal resistance allows conduction-cooled chassis mounting without forced air.

Fixed Wireless Access Base Station

Avionics Communication Relay

Use Scenario: Point-to-multipoint broadband access nodes in rural infrastructure using licensed L-band spectrum.

IC Role / Device Role / Timing Role: Linearized PA stage in Doherty or envelope-tracking architecture.

Use Value: 50–55% drain efficiency minimizes power supply and cooling overhead; impedance data enables precise broadband matching over 100 MHz bandwidth.

Use Scenario: Airborne relay transceivers linking UAVs or aircraft to ground networks in line-of-sight conditions.

IC Role / Device Role / Timing Role: High-reliability RF output amplifier in vibration- and temperature-cycled environment.

Use Value: 200 °C junction rating supports operation inside sealed avionics enclosures; M243 flange provides mechanical robustness against shock and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PD57045-E	Higher POUT (55 W), lower gain (14 dB), Rth(JC) = 1.1 °C/W, same M243 package	Better suited for efficiency-critical fixed-base stations where thermal margin is tight	Select when >50 W output is required and gain can be compensated by driver stage
BLF8G20LS-160	Higher frequency range (up to 2.0 GHz), POUT = 35 W @ 1.6 GHz, Rth(JC) = 1.5 °C/W, different SOT-1222 package	Optimized for dual-band L/S-band systems; not drop-in due to footprint and bias differences	Choose for multi-band designs needing extended upper-frequency coverage beyond 1.6 GHz

Compared with PD57045-E and BLF8G20LS-160, the LET16045C offers balanced trade-offs: sufficient output power for satellite uplinks, proven 20:1 VSWR ruggedness, and BeO-free safety-making it optimal for mobile and environmentally constrained deployments where reliability outweighs peak efficiency or bandwidth extension.

Availability

LET16045C is available at Aetrix Electronics and suitable for INMARSAT terminal manufacturing, L-band radar subsystems, fixed wireless access infrastructure, and avionics communication relays requiring stable component supply across extended production lifecycles.

Supply support for LET16045C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and power applications.

The LET16045C belongs to the LdmoST family of lateral MOSFETs, engineered specifically for rugged, high-efficiency RF power amplification in commercial and industrial L-band systems where thermal stability and load tolerance are critical.

FAQ

What is the recommended gate bias voltage for LET16045C in Class AB operation?

The LET16045C is specified for V_GS(Q) = 2.0–5.0 V at I_D = 300 mA, with typical bias set to ~3.5 V for 400 mA quiescent drain current. This range ensures stable turn-on while avoiding excessive gate leakage; external gate resistor networks must limit transient overshoot to stay within ±15 V absolute maximum rating.

Can LET16045C operate reliably at 1.8 GHz?

No-its dynamic performance is characterized only up to 1600 MHz, with gain and efficiency dropping significantly above that frequency. At 1.8 GHz, measured POUT falls below 30 W and gain drops below 12 dB per ST's application note AN4253; operation outside 1.6 GHz is not guaranteed or supported.

Is the M243 package lead-free and RoHS-compliant?

Yes-the M243 package uses lead-free terminations and complies with the EU RoHS Directive 2002/95/EC, as confirmed in the "ECOPACK®" section of the datasheet. The BeO-free construction further aligns with hazardous substance restrictions beyond RoHS, including China RoHS and JEDEC J-STD-609.

Does LET16045C require external stabilization networks?

Yes-due to its high gain and broadband nature, unconditional stability requires external RC or ferrite-based stabilization on gate and drain lines, especially below 500 MHz. ST's evaluation board (reference schematic Fig.6) includes gate stopper resistors and drain RF chokes to prevent oscillation under wideband load conditions.

LET16045C Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: M243

Packaging:: Box

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 1.6GHz

Gain:: 16dB

Voltage - Test:: 28 V

Current Rating (Amps):: 9A

Noise Figure:: -

Current - Test:: 400 mA

Power - Output:: 45W

Voltage - Rated:: 80 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: M243

LET16045C FAQ

1.How can I place an order for LET16045C through Aetrix?

Please submit a Request for Quotation (RFQ) for LET16045C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LET16045C reliable?

The price and inventory of LET16045C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LET16045C is usually 5 days.

3.What payment methods are accepted for LET16045C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LET16045C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LET16045C?

LET16045C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LET16045C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LET16045C?

For technical support, including LET16045C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LET16045C requirements.

6.How does Aetrix verify that LET16045C is sourced from the original manufacturer or authorized distributors?

All LET16045C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LET16045C meets industry standards.

7.What is the process for return or replacement of LET16045C?

All LET16045C units undergo pre-shipment inspection (PSI). If there is an issue with LET16045C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LET16045C part is unused and in its original packaging.

Return procedure for LET16045C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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