STMicroelectronics LET16060C

Overview

LET16060C from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband operation up to 1.6 GHz, delivering 60 W output power at 28 V with 13.8 dB gain and 55% drain efficiency at 1600 MHz - optimized for INMARSAT satellite communications transmitters.

For engineers reviewing the LET16060C datasheet, LET16060C pinout, LET16060C application, or LET16060C equivalent, key selection criteria include thermal resistance (1.3 °C/W), V(BR)DSS (80 V), gate voltage range (−0.5 to +15 V), load mismatch tolerance (20:1 VSWR), and BeO-free M243 package compliance with RoHS and ECOPACK® standards.

Technical Context

This device operates in common-source configuration with fixed 400 mA quiescent drain current biasing, supporting broadband linear amplification across UHF bands. Its lateral MOSFET architecture enables excellent thermal stability up to 200 °C junction temperature and high gain flatness without external feedback networks.

Designed for 28 V DC supply operation, it achieves 60 W saturated output power at 1600 MHz with measured input impedance (1.3 − j2.3 Ω) and output impedance (0.2 − j0.96 Ω), enabling direct matching to standard 50 Ω systems using discrete passive networks as shown in the reference board layout.

Key Specifications

Pinout & Package

The LET16060C uses the M243 (.230 × .360 inch, 2-lead, non-hermetic with flange) ceramic-metal package with integral heatsink flange. It features a three-terminal layout: Drain (Pin 1), Gate (Pin 2), Source (Pin 3), with Pin 3 electrically connected to the metal flange for low-inductance grounding and thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF158G and PD57060, the LET16060C offers optimal balance of 60 W output, 13.8 dB gain, and 1.3 °C/W thermal resistance specifically tuned for 1.5–1.6 GHz INMARSAT and radar applications - making it the preferred choice where L-band linearity, reliability, and thermal density are critical.

Availability

LET16060C is available at Aetrix Electronics and suitable for INMARSAT terminal manufacturing, L-band radar production, and public safety radio development requiring stable component supply and long-term lifecycle support.

Supply support for LET16060C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and communications markets.

The LET16060C belongs to the LdmoST family of lateral MOSFETs - engineered specifically for high-efficiency, high-reliability RF power amplification in commercial satellite and defense-grade UHF systems.

FAQ

What is the recommended gate bias voltage for linear operation?

The LET16060C specifies VGS(Q) = 2–5 V at ID = 400 mA and VDS = 28 V. For linear Class AB operation, a typical gate bias of 3.5 V is used with source degeneration to stabilize quiescent current across temperature. External gate resistors (e.g., R1 = 560 Ω in reference schematic) limit RF feedback and prevent oscillation.

Can the LET16060C be operated at 50 V drain supply?

No - the absolute maximum V(BR)DSS is 80 V, but the device is characterized and qualified only at 28 V. Operating above 28 V violates the design envelope, risks premature breakdown, and voids thermal performance guarantees. The 28 V rating reflects optimal trade-off between gain, efficiency, and reliability per the datasheet test conditions.

Is the metal flange electrically isolated from the source terminal?

Yes - Pin 3 (Source) is internally bonded to the metal flange, making them electrically and thermally common. The flange must be connected to RF ground and heatsink simultaneously. No insulating washer or thermal pad should be placed between flange and heatsink, as this degrades both thermal performance and RF grounding integrity.

Does LET16060C require external stabilization networks?

Yes - the reference design includes gate-stopper resistors (R1–R3), ferrite beads (FB1–FB4), and bypass capacitors (C1–C13) to suppress VHF/UHF parasitic oscillations. Without these, the device exhibits instability above 500 MHz due to internal feedback paths; the schematic in Figure 6 is mandatory for production use.