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STMicroelectronics LET20045C

Part No.:
LET20045C
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
M243
Datasheet:
AetrixLET20045C.pdf
Description:
RF MOSFET LDMOS 28V M243
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,829

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Product details

Overview

LET20045C from STMicroelectronics is a common-source n-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband base station amplifiers up to 2.0 GHz, delivering 54 W output power at 28 V with 13.3 dB gain and 45% drain efficiency at 2000 MHz under 2.5 W input drive.

For engineers reviewing the LET20045C datasheet, LET20045C pinout, LET20045C application, or LET20045C equivalent, this device is selected for high-linearity, high-efficiency RF final-stage amplification in IS-95/CDMA infrastructure where thermal stability, load mismatch tolerance (10:1 VSWR), and BeO-free packaging are critical design requirements.

Technical Context

The LET20045C operates in common-source configuration with fixed gate bias (VGS(Q) = 2.0–5.0 V) and supports broadband matching via defined ZIN (input) and ZDL (drain load) impedance data at 2000 MHz. Its lateral MOSFET structure enables stable gain across supply voltages from 20 V to 36 V.

Thermal performance is defined by Rth(JC) = 1.0 °C/W and TJ(max) = 200 °C, enabling high-power operation at TCASE = 70 °C with PDISS = 130 W. It sustains full-rated RF performance under 10:1 load VSWR across all phase angles without damage.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS80 V - Ensures safe operation with 28–36 V DC supply plus RF swing headroom
POUT @ 28 V54 W - Delivers Class AB linear output for multi-carrier CDMA base stations
Gain @ 2000 MHz13.3 dB - Enables single-stage amplification with minimal external gain blocks
Drain Efficiency45 % - Reduces heatsink size and system cooling requirements
Rth(JC)1.0 °C/W - Supports high continuous-wave dissipation on standard copper-clad PCBs
Load Mismatch10:1 VSWR - Guarantees ruggedness against antenna detuning or cable faults
IDSS1 µA - Confirms low gate leakage for stable bias network design

Pinout & Package

Package: M243 (.230 × .360 inch, 2-lead, non-hermetic with flange), BeO-free ceramic-metal construction compliant with RoHS and ECOPACK® standards.

Pin/TerminalCircuit RoleDesign Meaning
1. DrainRF Power Output / DC Supply NodeConnected to output matching network and DC supply rail; requires low-inductance thermal path to heatsink
2. GateRF Input / Bias Control NodeDC-biased at 2.0–5.0 V; isolated from RF ground via series resistor for stability
3. SourceRF Ground / DC Return PathDirectly bonded to package flange; serves as primary RF and thermal return path

Key Features

FeatureDesign Value
Common-source configurationEnables direct integration into standard push-pull or single-ended RF PA layouts without topology conversion
BeO-free packageEliminates beryllium oxide toxicity concerns while maintaining 1.0 °C/W thermal resistance
10:1 load VSWR tolerancePermits deployment in uncontrolled antenna environments without external circulators or isolators
High gain flatness (12–13.3 dB)Reduces need for gain compensation networks across 1998–2000 MHz IS-95 channel band
Low IMD3/IMD5 at PEPSupports 9-channel IS-95 forward link with ACPR < –70 dBc at 30 W PEP output

Applications

CDMA Base Station TransmitterISM Band 2.4 GHz Amplifier

Use Scenario: Final-stage RF amplifier in macrocell BTS operating on IS-95 forward link with 9-carrier modulation.

IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor in common-source Class AB configuration.

Use Value: Delivers 54 W POUT with 45% drain efficiency and ACPR < –70 dBc at 30 W PEP, reducing cooling and power supply overhead.

Use Scenario: Industrial heating driver in 2.4–2.5 GHz ISM systems requiring robust load handling.

IC Role / Device Role / Timing Role: Fixed-bias RF power stage operating at 36 V with 65 W saturated output.

Use Value: Withstands indefinite 10:1 VSWR exposure without degradation-critical for magnetron-coupled loads.

Public Safety Radio RepeaterAvionics Communication Test Bench

Use Scenario: UHF repeater final amplifier covering 400–470 MHz with wideband impedance matching.

IC Role / Device Role / Timing Role: Broadband RF power transistor with ZIN/ZDL data provided for 400–2000 MHz matching.

Use Value: Maintains >12 dB gain and >40% efficiency across 400–2000 MHz, enabling single-device coverage of multiple bands.

Use Scenario: Lab-grade RF stimulus amplifier for validating transceiver linearity and spectral mask compliance.

IC Role / Device Role / Timing Role: Stable, repeatable RF power source with calibrated gain and IMD performance per datasheet curves.

Use Value: Provides traceable IMD3/IMD5 and ACPR vs. POUT data (Fig 7–10) for calibration reference and test correlation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MRF6VP2600HR5Higher POUT (600 W), GaN HEMT, Rth(JC) = 0.35 °C/W, V(BR)DSS = 65 VTargets 5G massive MIMO active antennas; requires different gate biasing and thermal interfaceChoose for >100 W systems needing higher efficiency and bandwidth beyond 2.7 GHz
PD85004LDMOS, POUT = 40 W @ 2140 MHz, Rth(JC) = 1.25 °C/W, V(BR)DSS = 65 VLower-cost alternative for sub-45 W macrocell or microcell deploymentsChoose when thermal margin allows higher Rth(JC) and output power requirement is ≤40 W

Compared with MRF6VP2600HR5 and PD85004, the LET20045C offers optimal balance of 54 W output, 1.0 °C/W thermal resistance, and proven 10:1 VSWR ruggedness in cost-sensitive 2G/3G base station upgrades where GaN complexity or derated LDMOS output is not required.

Availability

LET20045C is available at Aetrix Electronics and suitable for CDMA base station transmitters, ISM band amplifiers, public safety radio repeaters, and avionics communication test benches requiring stable component supply and long-term industrial lifecycle support.

Supply support for LET20045C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and RF components for industrial, automotive, and communications markets.

The LET20045C belongs to the LdmoST family of lateral DMOS RF transistors, engineered specifically for high-gain, high-efficiency, and thermally robust operation in commercial wireless infrastructure amplifiers up to 2.0 GHz.

FAQ

What is the recommended gate bias voltage range for stable Class AB operation?

The LET20045C specifies VGS(Q) = 2.0–5.0 V at ID = 100 mA and VDS = 28 V. For reliable Class AB operation at IDQ = 500 mA, a fixed gate bias of 3.2–3.8 V is recommended using a temperature-compensated resistive divider, verified by the typical gain vs. IDQ curves in Figure 3.

Can the LET20045C be operated safely at 36 V with full 65 W output?

Yes - the device is rated for V(BR)DSS = 80 V and delivers 65 W POUT with 12.5 dB gain at 36 V, 2000 MHz, and IDQ = 500 mA. Thermal design must ensure case temperature remains ≤70 °C to sustain 130 W PDISS, per absolute maximum ratings in Table 2.

Is external gate protection required against ESD or RF feedback?

Yes - although IGSS ≤ 1 µA, the gate oxide is sensitive. ST recommends a 10 Ω series resistor and parallel 100 pF capacitor at the gate terminal, plus a 10 V Zener diode between gate and source, as shown in application note AN4302 for LdmoST devices.

Does the M243 package require solder paste reflow or is it through-hole mounted?

The M243 is a flanged metal-ceramic package with two leads intended for through-hole mounting and mechanical clamping to a heatsink. It is not reflow-solderable; mounting requires conductive thermal compound, spring-loaded screws, and torque-controlled fastening per ST's M243 mechanical drawing (Table 7).

LET20045C Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
M243
Packaging:
Box
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
-
Frequency:
2GHz
Gain:
13.3dB
Voltage - Test:
28 V
Current Rating (Amps):
12A
Noise Figure:
-
Current - Test:
500 mA
Power - Output:
54W
Voltage - Rated:
80 V
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
M243

LET20045C FAQ

1.How can I place an order for LET20045C through Aetrix?

Please submit a Request for Quotation (RFQ) for LET20045C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LET20045C reliable?

The price and inventory of LET20045C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LET20045C is usually 5 days.

3.What payment methods are accepted for LET20045C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LET20045C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LET20045C?

LET20045C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LET20045C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LET20045C?

For technical support, including LET20045C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LET20045C requirements.

6.How does Aetrix verify that LET20045C is sourced from the original manufacturer or authorized distributors?

All LET20045C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LET20045C meets industry standards.

7.What is the process for return or replacement of LET20045C?

All LET20045C units undergo pre-shipment inspection (PSI). If there is an issue with LET20045C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LET20045C part is unused and in its original packaging.

Return procedure for LET20045C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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