STMicroelectronics LET9060

Overview

LET9060 from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET designed for RF power amplification in base station transmitters. It delivers 60 W output power with 17.2 dB gain at 960 MHz under 28 V supply, features 1.0 °C/W junction-to-case thermal resistance, and operates up to 1 GHz. Its PowerSO-10RF plastic SMD package enables high-reliability surface-mount assembly in broadband infrastructure applications.

For engineers reviewing the LET9060 datasheet, LET9060 pinout, LET9060 application, or LET9060 equivalent, key selection criteria include RF gain flatness across 800–1000 MHz, load mismatch tolerance (20:1 VSWR), thermal performance at TC = 70 °C, and compatibility with 28 V DC bias networks in Class AB amplifier stages.

Technical Context

The LET9060 employs ST's LDMOS process optimized for linearity and thermal stability in continuous-wave and modulated RF operation. Its lateral structure supports high peak current handling (12 A) and low gate charge, enabling efficient broadband amplification without external harmonic filtering in many macrocell designs.

Designed for common-source configuration, it requires no external bootstrap circuitry and maintains stable transconductance (GFS = 2.5 mho) across temperature. The device's CISS (77 pF), COSS (39 pF), and CRSS (1.2 pF) values support impedance matching networks targeting 50 Ω input/output interfaces at UHF frequencies.

Key Specifications

Pinout & Package

LET9060 is housed in PowerSO-10RF, ST's JEDEC-approved SMD plastic RF power package with formed or straight leads. The package integrates thermal pad on underside for direct PCB copper pour attachment and supports automated reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6V2010N and PD85006, LET9060 offers best-in-class linearity at 900 MHz with identical SMD footprint and proven thermal interface, making it optimal for new macrocell designs prioritizing ACLR and manufacturability over raw power scaling.

Availability

LET9060 is available at Aetrix Electronics and suitable for macrocell base station transmitters, GSM 900 MHz power amplifiers, and industrial UHF communication systems requiring stable component supply and long-term lifecycle support.

Supply support for LET9060 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and communications markets.

LET9060 belongs to ST's LdmoST RF power transistor family, engineered specifically for high-linearity, high-efficiency UHF infrastructure amplifiers where thermal reliability and SMD manufacturability are critical.

FAQ

What is the recommended gate bias voltage for LET9060 in Class AB operation?

The LET9060 specifies VGS(Q) = 2.0–5.0 V at ID = 100 mA and VDS = 28 V. For stable Class AB operation at IDQ = 300 mA, a typical gate bias of +3.8 V DC is used with source degeneration resistor to set quiescent current, verified by measurement across production units per Doc ID 010019 Rev 1.

Does LET9060 require external gate protection diodes?

No. LET9060 incorporates integrated ESD protection rated Class 2 HBM (2 kV) and Class M3 MM, sufficient for standard PCB handling and reflow. External gate protection is unnecessary unless operating in high-static environments exceeding IEC 61000-4-2 Level 4.

Can LET9060 be operated at 50 V drain supply?

No. Absolute maximum V(BR)DSS is 80 V, but the device is characterized and qualified only at 28 V operation. Operating above 28 V violates ST's published test conditions and voids performance guarantees for gain, efficiency, and reliability per preliminary datasheet Doc ID 010019 Rev 1.

What is the minimum recommended PCB copper area for thermal management?

ST recommends ≥ 25 cm² of 2-oz copper connected to the PowerSO-10RF thermal pad on inner layers, with ≥ 6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground planes. This achieves ≤ 70 °C case temperature at 60 W POUT, per thermal simulation data in Section 3 of the datasheet.