STMicroelectronics LET9060S

Overview

LET9060S from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET designed for RF power amplification up to 1 GHz. It delivers 60 W output power with 17.2 dB gain at 960 MHz under 28 V supply and 300 mA quiescent drain current, featuring 1.0 °C/W junction-to-case thermal resistance and PowerSO-10RF straight-lead package for high-reliability SMD RF assembly.

For engineers reviewing the LET9060S datasheet, LET9060S pinout, LET9060S application, or LET9060S equivalent, key selection criteria include RF gain linearity at 960 MHz, thermal performance under 28 V bias, load mismatch tolerance (20:1 VSWR), and compatibility with JEDEC-approved PowerSO-10RF SMD footprint for base station PA stages.

Technical Context

The LET9060S operates in common-source configuration with fixed 28 V drain supply and 300 mA IDQ bias, optimized for broadband linear amplification from 10 MHz to 1 GHz. Its LDMOS structure provides stable transconductance (2.5 mho) and low input/output capacitance (CISS = 77 pF, COSS = 39 pF), enabling wideband matching without external harmonic suppression.

Designed for industrial and commercial base station infrastructure, it supports high-efficiency operation (ηD = 60–70%) at 60 W POUT with robust 20:1 VSWR load mismatch tolerance. The device integrates ESD protection per Human Body Model Class 2 and Machine Model Class M3, meeting J-STD-020B MSL 3 moisture sensitivity requirements.

Key Specifications

Pinout & Package

LET9060S uses the PowerSO-10RF straight-lead plastic package - ST's first JEDEC-approved high-power SMD RF package, optimized for thermal conduction and RF performance. Dimensions comply with Table 9 (A2 = 3.4–3.6 mm, D = 9.4–9.6 mm, E = 15.15–15.65 mm, L = 0.8–1.1 mm lead length).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6V2010N and PD85003, LET9060S uniquely balances 60 W output, 17.2 dB gain, and SMD manufacturability in a JEDEC-qualified RF package - making it optimal for cost-sensitive, high-volume base station PA modules requiring automated assembly and thermal reliability.

Availability

LET9060S is available at Aetrix Electronics and suitable for macrocell base station PA, public safety repeaters, industrial RF heating, and ISM band amplifier modules requiring stable component supply and JEDEC-compliant SMD RF packaging.

Supply support for LET9060S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and communications markets.

LET9060S belongs to ST's LdmoST plastic family of RF power transistors - engineered specifically for high-gain, broadband, thermally robust amplification in commercial and industrial infrastructure equipment.

FAQ

What is the maximum safe operating frequency for LET9060S?

The LET9060S is characterized and rated for operation up to 1 GHz, with full electrical specifications guaranteed at 960 MHz. Its LDMOS structure and PowerSO-10RF package maintain stable gain and efficiency through 1 GHz, though gain rolls off gradually beyond that point per Figure 2 in the datasheet.

Can LET9060S be used in Class C amplifier configurations?

No - LET9060S is specified and optimized for Class AB operation with 300 mA IDQ bias. Its transconductance curve and thermal design assume linear conduction; Class C use would exceed safe SOA limits and degrade reliability due to uncontrolled peak currents and localized heating.

Is the PowerSO-10RF straight-lead package RoHS-compliant?

Yes - LET9060S is offered in ECOPACK®-compliant PowerSO-10RF packaging, meeting RoHS Directive 2011/65/EU. ST's ECOPACK® documentation confirms lead-free terminations, halogen-free molding compound, and full compliance with JEDEC standards for high-power SMD devices.

Does LET9060S require external gate protection diodes?

No - the device integrates on-chip ESD protection rated Class 2 HBM and Class M3 MM, sufficient for standard PCB handling and reflow. External gate clamps are unnecessary unless operating in extreme RF-noise environments exceeding ±2 kV transients, which is outside its intended application scope.